These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

146 related articles for article (PubMed ID: 28773923)

  • 41. Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures.
    Tan S; Zhang J; Egawa T; Chen G; Luo X; Sun L; Zhu Y
    Nanoscale Res Lett; 2018 Oct; 13(1):334. PubMed ID: 30353235
    [TBL] [Abstract][Full Text] [Related]  

  • 42. The Structural, Electronic, and Optical Properties of Ge/Si Quantum Wells: Lasing at a Wavelength of 1550 nm.
    Li H; Wang J; Bai J; Zhang S; Zhang S; Sun Y; Dou Q; Ding M; Wang Y; Qu D; Du J; Tang C; Li E; Prades JD
    Nanomaterials (Basel); 2020 May; 10(5):. PubMed ID: 32466114
    [TBL] [Abstract][Full Text] [Related]  

  • 43. Nuclear Spin-Depleted, Isotopically Enriched
    Moutanabbir O; Assali S; Attiaoui A; Daligou G; Daoust P; Vecchio PD; Koelling S; Luo L; Rotaru N
    Adv Mater; 2024 Feb; 36(8):e2305703. PubMed ID: 38009242
    [TBL] [Abstract][Full Text] [Related]  

  • 44. Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate.
    Cheng SL; Lu J; Shambat G; Yu HY; Saraswat K; Vuckovic J; Nishi Y
    Opt Express; 2009 Jun; 17(12):10019-24. PubMed ID: 19506652
    [TBL] [Abstract][Full Text] [Related]  

  • 45. Theoretical investigation of tensile strained GeSn waveguide with Si₃N₄ liner stressor for mid-infrared detector and modulator applications.
    Zhang Q; Liu Y; Yan J; Zhang C; Hao Y; Han G
    Opt Express; 2015 Mar; 23(6):7924-32. PubMed ID: 25837129
    [TBL] [Abstract][Full Text] [Related]  

  • 46. Silicon-based current-injected light emitting diodes with Ge self-assembled quantum dots embedded in photonic crystal nanocavities.
    Xu X; Tsuboi T; Chiba T; Usami N; Maruizumi T; Shiraki Y
    Opt Express; 2012 Jun; 20(13):14714-21. PubMed ID: 22714532
    [TBL] [Abstract][Full Text] [Related]  

  • 47. Ge-on-Si laser operating at room temperature.
    Liu J; Sun X; Camacho-Aguilera R; Kimerling LC; Michel J
    Opt Lett; 2010 Mar; 35(5):679-81. PubMed ID: 20195317
    [TBL] [Abstract][Full Text] [Related]  

  • 48. A new route toward light emission from Ge: tensile-strained quantum dots.
    Chen Q; Song Y; Wang K; Yue L; Lu P; Li Y; Gong Q; Wang S
    Nanoscale; 2015 May; 7(19):8725-30. PubMed ID: 25924225
    [TBL] [Abstract][Full Text] [Related]  

  • 49. Effects of Asymmetric Quantum Wells on the Structural and Optical Properties of InGaN-Based Light-Emitting Diodes.
    Tsai CL; Wu WC
    Materials (Basel); 2014 May; 7(5):3758-3771. PubMed ID: 28788647
    [TBL] [Abstract][Full Text] [Related]  

  • 50. Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films.
    Katiyar AK; Grimm A; Bar R; Schmidt J; Wietler T; Osten HJ; Ray SK
    Nanotechnology; 2016 Oct; 27(43):435204. PubMed ID: 27659285
    [TBL] [Abstract][Full Text] [Related]  

  • 51. Enhanced Light Emission due to Formation of Semi-polar InGaN/GaN Multi-quantum Wells.
    Zhao WR; Weng GE; Wang JY; Zhang JY; Liang HW; Sekiguchi T; Zhang BP
    Nanoscale Res Lett; 2015 Dec; 10(1):459. PubMed ID: 26625883
    [TBL] [Abstract][Full Text] [Related]  

  • 52. Strain Modulation of Selectively and/or Globally Grown Ge Layers.
    Du Y; Wang G; Miao Y; Xu B; Li B; Kong Z; Yu J; Zhao X; Lin H; Su J; Han J; Liu J; Dong Y; Wang W; Radamson HH
    Nanomaterials (Basel); 2021 May; 11(6):. PubMed ID: 34071167
    [TBL] [Abstract][Full Text] [Related]  

  • 53. [The electroluminescence spectra of InGan/GaN blue LEDs during aging time].
    Dai S; Yu TJ; Li XB; Yuan GC; Lu HM
    Guang Pu Xue Yu Guang Pu Fen Xi; 2014 Feb; 34(2):327-30. PubMed ID: 24822394
    [TBL] [Abstract][Full Text] [Related]  

  • 54. Tensilely Strained Ge Films on Si Substrates Created by Physical Vapor Deposition of Solid Sources.
    Li YS; Nguyen J
    Sci Rep; 2018 Nov; 8(1):16734. PubMed ID: 30425315
    [TBL] [Abstract][Full Text] [Related]  

  • 55. Temperature-dependent electroluminescence of red high-In-content MQWs of dual-wavelength micro-LED.
    Shan X; Li Y; Yu H; Lin R; Tan C; Wang R; Luo Y; Cui X; Liu R; Tian P
    Opt Express; 2024 May; 32(11):20412-20420. PubMed ID: 38859153
    [TBL] [Abstract][Full Text] [Related]  

  • 56. Single and double hole quantum dots in strained Ge/SiGe quantum wells.
    Hardy WJ; Harris CT; Su YH; Chuang Y; Moussa J; Maurer LN; Li JY; Lu TM; Luhman DR
    Nanotechnology; 2019 May; 30(21):215202. PubMed ID: 30869078
    [TBL] [Abstract][Full Text] [Related]  

  • 57. Study on Strain Compensation for Multiple-Quantum Well in Infrared Light-Emitting Diode Using the In
    Kim DK; Lee HJ
    J Nanosci Nanotechnol; 2018 Mar; 18(3):2014-2017. PubMed ID: 29448702
    [TBL] [Abstract][Full Text] [Related]  

  • 58. Direct-gap optical gain of Ge on Si at room temperature.
    Liu J; Sun X; Kimerling LC; Michel J
    Opt Lett; 2009 Jun; 34(11):1738-40. PubMed ID: 19488166
    [TBL] [Abstract][Full Text] [Related]  

  • 59. Room-temperature efficient light detection by amorphous Ge quantum wells.
    Cosentino S; Miritello M; Crupi I; Nicotra G; Simone F; Spinella C; Terrasi A; Mirabella S
    Nanoscale Res Lett; 2013 Mar; 8(1):128. PubMed ID: 23496870
    [TBL] [Abstract][Full Text] [Related]  

  • 60. Radial multi-quantum well ZnO nanorod arrays for nanoscale ultraviolet light-emitting diodes.
    Kang JW; Kim BH; Song H; Jo YR; Hong SH; Jung GY; Kim BJ; Park SJ; Cho CH
    Nanoscale; 2018 Aug; 10(31):14812-14818. PubMed ID: 29876575
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 8.