145 related articles for article (PubMed ID: 28785091)
1. Photon-triggered nanowire transistors.
Kim J; Lee HC; Kim KH; Hwang MS; Park JS; Lee JM; So JP; Choi JH; Kwon SH; Barrelet CJ; Park HG
Nat Nanotechnol; 2017 Oct; 12(10):963-968. PubMed ID: 28785091
[TBL] [Abstract][Full Text] [Related]
2. Photon-Triggered Current Generation in Chemically-Synthesized Silicon Nanowires.
Kim J; Kim HR; Lee HC; Kim KH; Hwang MS; Lee JM; Jeong KY; Park HG
Nano Lett; 2019 Feb; 19(2):1269-1274. PubMed ID: 30677304
[TBL] [Abstract][Full Text] [Related]
3. Photo-Triggered Logic Circuits Assembled on Integrated Illuminants and Resonant Nanowires.
Li Q; Jiang C; Bi S; Asare-Yeboah K; He Z; Liu Y
ACS Appl Mater Interfaces; 2020 Oct; 12(41):46501-46508. PubMed ID: 32981308
[TBL] [Abstract][Full Text] [Related]
4. Logic Gates Based on 3D Vertical Junctionless Gate-All-Around Transistors with Reliable Multilevel Contact Engineering.
Kumar A; Müller J; Pelloquin S; Lecestre A; Larrieu G
Nano Lett; 2024 Jul; 24(26):7825-7832. PubMed ID: 38885473
[TBL] [Abstract][Full Text] [Related]
5. Long single ZnO nanowire for logic and memory circuits: NOT, NAND, NOR gate, and SRAM.
Lee YT; Ali Raza SR; Jeon PJ; Ha R; Choi HJ; Im S
Nanoscale; 2013 May; 5(10):4181-5. PubMed ID: 23584636
[TBL] [Abstract][Full Text] [Related]
6. Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient.
Barreda JL; Keiper TD; Zhang M; Xiong P
ACS Appl Mater Interfaces; 2017 Apr; 9(13):12046-12053. PubMed ID: 28274114
[TBL] [Abstract][Full Text] [Related]
7. Flexible logic gates composed of high performance GaAs-nanowire-based MESFETs with MHz-dynamic operations.
Yoon C; Moon T; Lee M; Cho G; Kim S
Nanotechnology; 2011 Nov; 22(46):465202. PubMed ID: 22032860
[TBL] [Abstract][Full Text] [Related]
8. Piezo-phototronic Boolean logic and computation using photon and strain dual-gated nanowire transistors.
Yu R; Wu W; Pan C; Wang Z; Ding Y; Wang ZL
Adv Mater; 2015 Feb; 27(5):940-7. PubMed ID: 25504086
[TBL] [Abstract][Full Text] [Related]
9. Small-diameter p-type SnS nanowire photodetectors and phototransistors with low-noise and high-performance.
Chen R; Li L; Jiang L; Yu X; Zhu D; Xiong Y; Zheng D; Yang W
Nanotechnology; 2022 Jan; 33(13):. PubMed ID: 34933293
[TBL] [Abstract][Full Text] [Related]
10. Electrical characterization of composition modulated In(1-x)Sb(x) nanowire field effect transistors by scanning gate microscopy.
Martinez-Morales AA; Penchev M; Zhong J; Jing X; Singh KV; Yengel E; Khan MI; Ozkan CS; Ozkan M
J Nanosci Nanotechnol; 2010 Oct; 10(10):6779-82. PubMed ID: 21137796
[TBL] [Abstract][Full Text] [Related]
11. NOT and NAND logic circuits composed of top-gate ZnO nanowire field-effect transistors with high-k Al(2)O(3) gate layers.
Yeom D; Keem K; Kang J; Jeong DY; Yoon C; Kim D; Kim S
Nanotechnology; 2008 Jul; 19(26):265202. PubMed ID: 21828674
[TBL] [Abstract][Full Text] [Related]
12. Hybrid porphyrin-silicon nanowire field-effect transistor by opto-electrical excitation.
Seol ML; Choi SJ; Choi JM; Ahn JH; Choi YK
ACS Nano; 2012 Sep; 6(9):7885-92. PubMed ID: 22882562
[TBL] [Abstract][Full Text] [Related]
13. Ultralow-power non-volatile memory cells based on P(VDF-TrFE) ferroelectric-gate CMOS silicon nanowire channel field-effect transistors.
Van NH; Lee JH; Whang D; Kang DJ
Nanoscale; 2015 Jul; 7(27):11660-6. PubMed ID: 26098677
[TBL] [Abstract][Full Text] [Related]
14. New Approach to Low-Power-Consumption, High-Performance Photodetectors Enabled by Nanowire Source-Gated Transistors.
Wang M; Zhuang X; Liu F; Chen Y; Sa Z; Yin Y; Lv Z; Wei H; Song K; Cao B; Yang ZX
Nano Lett; 2022 Dec; 22(23):9707-9713. PubMed ID: 36445059
[TBL] [Abstract][Full Text] [Related]
15. Ultrasensitive Mid-wavelength Infrared Photodetection Based on a Single InAs Nanowire.
Zhang X; Huang H; Yao X; Li Z; Zhou C; Zhang X; Chen P; Fu L; Zhou X; Wang J; Hu W; Lu W; Zou J; Tan HH; Jagadish C
ACS Nano; 2019 Mar; 13(3):3492-3499. PubMed ID: 30817125
[TBL] [Abstract][Full Text] [Related]
16. Non-volatile ferroelectric memory with position-addressable polymer semiconducting nanowire.
Hwang SK; Min SY; Bae I; Cho SM; Kim KL; Lee TW; Park C
Small; 2014 May; 10(10):1976-84. PubMed ID: 24644019
[TBL] [Abstract][Full Text] [Related]
17. Complementary symmetry nanowire logic circuits: experimental demonstrations and in silico optimizations.
Sheriff BA; Wang D; Heath JR; Kurtin JN
ACS Nano; 2008 Sep; 2(9):1789-98. PubMed ID: 19206417
[TBL] [Abstract][Full Text] [Related]
18. Silicon-nanowire transistors with intruded nickel-silicide contacts.
Weber WM; Geelhaar L; Graham AP; Unger E; Duesberg GS; Liebau M; Pamler W; Chèze C; Riechert H; Lugli P; Kreupl F
Nano Lett; 2006 Dec; 6(12):2660-6. PubMed ID: 17163684
[TBL] [Abstract][Full Text] [Related]
19. Layer-by-layer assembly of nanowires for three-dimensional, multifunctional electronics.
Javey A; Nam S; Friedman RS; Yan H; Lieber CM
Nano Lett; 2007 Mar; 7(3):773-7. PubMed ID: 17266383
[TBL] [Abstract][Full Text] [Related]
20. InAs Nanowire Transistors with Multiple, Independent Wrap-Gate Segments.
Burke AM; Carrad DJ; Gluschke JG; Storm K; Fahlvik Svensson S; Linke H; Samuelson L; Micolich AP
Nano Lett; 2015 May; 15(5):2836-43. PubMed ID: 25879492
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
