155 related articles for article (PubMed ID: 28788521)
1. The Effects of Annealing Temperatures on Composition and Strain in Si
Abidin MSZ; Morshed T; Chikita H; Kinoshita Y; Muta S; Anisuzzaman M; Park JH; Matsumura R; Mahmood MR; Sadoh T; Hashim AM
Materials (Basel); 2014 Feb; 7(2):1409-1421. PubMed ID: 28788521
[TBL] [Abstract][Full Text] [Related]
2. Crystallization of Electrodeposited Germanium Thin Film on Silicon (100).
Abidin MSZ; Matsumura R; Anisuzzaman M; Park JH; Muta S; Mahmood MR; Sadoh T; Hashim AM
Materials (Basel); 2013 Nov; 6(11):5047-5057. PubMed ID: 28788375
[TBL] [Abstract][Full Text] [Related]
3. Interplay of strain and intermixing effects on direct-bandgap optical transition in strained Ge-on-Si under thermal annealing.
Lee C; Yoo YS; Ki B; Jang MH; Lim SH; Song HG; Cho JH; Oh J; Cho YH
Sci Rep; 2019 Aug; 9(1):11709. PubMed ID: 31406149
[TBL] [Abstract][Full Text] [Related]
4. Enhanced Electron Mobility in Nonplanar Tensile Strained Si Epitaxially Grown on Si
Wen F; Tutuc E
Nano Lett; 2018 Jan; 18(1):94-100. PubMed ID: 29185763
[TBL] [Abstract][Full Text] [Related]
5. Coherently Strained Si-SixGe1-x Core-Shell Nanowire Heterostructures.
Dillen DC; Wen F; Kim K; Tutuc E
Nano Lett; 2016 Jan; 16(1):392-8. PubMed ID: 26606651
[TBL] [Abstract][Full Text] [Related]
6. Enhanced direct-gap light emission from Si-capped n
Higashitarumizu N; Ishikawa Y
Opt Express; 2017 Sep; 25(18):21286-21300. PubMed ID: 29041428
[TBL] [Abstract][Full Text] [Related]
7. Pure, single crystal Ge nanodots formed using a sandwich structure via pulsed UV excimer laser annealing.
Liao TW; Chen HM; Shen KY; Kuan CH
Nanotechnology; 2015 Apr; 26(16):165301. PubMed ID: 25815515
[TBL] [Abstract][Full Text] [Related]
8. Synthesis of Ge
Mahmodi H; Hashim MR; Soga T; Alrokayan S; Khan HA; Rusop M
Materials (Basel); 2018 Nov; 11(11):. PubMed ID: 30424494
[TBL] [Abstract][Full Text] [Related]
9. Thermally Induced Tensile Strain of Epitaxial Ge Layers Grown by a Two-Step e-Beam Evaporation Process on Si Substrates.
Ki B; Kim KH; Kim H; Lee C; Cho YH; Oh J
J Nanosci Nanotechnol; 2016 May; 16(5):5239-42. PubMed ID: 27483906
[TBL] [Abstract][Full Text] [Related]
10. Impact of annealing on surface morphology and photoluminescence of self-assembled Ge and Si quantum dots.
Samavati A; Othaman Z; Dabagh S; Ghoshal SK
J Nanosci Nanotechnol; 2014 Jul; 14(7):5266-71. PubMed ID: 24758014
[TBL] [Abstract][Full Text] [Related]
11. Lateral Ge Diffusion During Oxidation of Si/SiGe Fins.
Brewer WM; Xin Y; Hatem C; Diercks D; Truong VQ; Jones KS
Nano Lett; 2017 Apr; 17(4):2159-2164. PubMed ID: 28249115
[TBL] [Abstract][Full Text] [Related]
12. Diffusion in Si(x)Ge(1-x)/Si nanowire heterostructures.
Zhang X; Kulik J; Dickey EC
J Nanosci Nanotechnol; 2007 Feb; 7(2):717-20. PubMed ID: 17450821
[TBL] [Abstract][Full Text] [Related]
13. Evolution of Ge nanoislands on Si(110)-'16 x 2' surface under thermal annealing studied using STM.
Gangopadhyay S; Yoshimura M; Ueda K
Nanotechnology; 2009 Nov; 20(47):475401. PubMed ID: 19875880
[TBL] [Abstract][Full Text] [Related]
14. Interfacial intermixing of Ge/Si core-shell nanowires by thermal annealing.
Zhang X; Jevasuwan W; Fukata N
Nanoscale; 2020 Apr; 12(14):7572-7576. PubMed ID: 31970348
[TBL] [Abstract][Full Text] [Related]
15. Nanocavities and germanium nanocrystals produced by Ge ion implantation in fused silica.
Barba D; Martin F; Demarche J; Terwagne G; Ross GG
Nanotechnology; 2012 Apr; 23(14):145701. PubMed ID: 22433986
[TBL] [Abstract][Full Text] [Related]
16. Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns.
Niu G; Capellini G; Lupina G; Niermann T; Salvalaglio M; Marzegalli A; Schubert MA; Zaumseil P; Krause HM; Skibitzki O; Lehmann M; Montalenti F; Xie YH; Schroeder T
ACS Appl Mater Interfaces; 2016 Jan; 8(3):2017-26. PubMed ID: 26709534
[TBL] [Abstract][Full Text] [Related]
17. Strain field mapping of dislocations in a Ge/Si heterostructure.
Liu Q; Zhao C; Su S; Li J; Xing Y; Cheng B
PLoS One; 2013; 8(4):e62672. PubMed ID: 23626845
[TBL] [Abstract][Full Text] [Related]
18. Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100).
Shklyaev AA; Latyshev AV
Nanoscale Res Lett; 2016 Dec; 11(1):366. PubMed ID: 27541814
[TBL] [Abstract][Full Text] [Related]
19. [Influence of strain in the Si cap layer of Si/SiGe heterostructure on its Raman spectra].
Xiao QH; Tu HL
Guang Pu Xue Yu Guang Pu Fen Xi; 2005 May; 25(5):719-22. PubMed ID: 16128072
[TBL] [Abstract][Full Text] [Related]
20. Kinetics of Ge diffusion, desorption and pit formation dynamics during annealing of Si(0.8)Ge(0.2)/Si(001) virtual substrates.
Zhang Z; Pan JS; Zhang J; Tok ES
Phys Chem Chem Phys; 2010 Jul; 12(26):7171-83. PubMed ID: 20498899
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
