These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

157 related articles for article (PubMed ID: 28788589)

  • 1. Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices.
    Pavunny SP; Scott JF; Katiyar RS
    Materials (Basel); 2014 Mar; 7(4):2669-2696. PubMed ID: 28788589
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Multifunctional Hybrid Multilayer Gate Dielectrics with Tunable Surface Energy for Ultralow-Power Organic and Amorphous Oxide Thin-Film Transistors.
    Byun HR; You EA; Ha YG
    ACS Appl Mater Interfaces; 2017 Mar; 9(8):7347-7354. PubMed ID: 28150486
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Comprehensive Study of Lanthanum Aluminate High-Dielectric-Constant Gate Oxides for Advanced CMOS Devices.
    Suzuki M
    Materials (Basel); 2012 Mar; 5(3):443-477. PubMed ID: 28817057
    [TBL] [Abstract][Full Text] [Related]  

  • 4. The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics.
    Wong H; Zhou J; Zhang J; Jin H; Kakushima K; Iwai H
    Nanoscale Res Lett; 2014; 9(1):472. PubMed ID: 25246873
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure.
    Khan ZN; Ahmed S; Ali M
    PLoS One; 2016; 11(8):e0161736. PubMed ID: 27571412
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Hybrid gate dielectric materials for unconventional electronic circuitry.
    Ha YG; Everaerts K; Hersam MC; Marks TJ
    Acc Chem Res; 2014 Apr; 47(4):1019-28. PubMed ID: 24428627
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Analysis of Lanthanum Oxide Based Double-Gate SOI MOSFET using Monte-Carlo Process.
    Paramasivam P; Gowthaman N; Srivastava VM
    Recent Pat Nanotechnol; 2024 Jan; ():. PubMed ID: 38213154
    [TBL] [Abstract][Full Text] [Related]  

  • 8. A Feasible Alternative to FDSOI and FinFET: Optimization of W/La
    Mah SK; Ker PJ; Ahmad I; Zainul Abidin NF; Ali Gamel MM
    Materials (Basel); 2021 Sep; 14(19):. PubMed ID: 34640118
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Emerging Applications for High K Materials in VLSI Technology.
    Clark RD
    Materials (Basel); 2014 Apr; 7(4):2913-2944. PubMed ID: 28788599
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Liquid-Metal-Printed Ultrathin Oxides for Atomically Smooth 2D Material Heterostructures.
    Zhang Y; Venkatakrishnarao D; Bosman M; Fu W; Das S; Bussolotti F; Lee R; Teo SL; Huang D; Verzhbitskiy I; Jiang Z; Jiang Z; Chai J; Tong SW; Ooi ZE; Wong CPY; Ang YS; Goh KEJ; Lau CS
    ACS Nano; 2023 Apr; 17(8):7929-7939. PubMed ID: 37021759
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric.
    Tsai SJ; Wang CL; Lee HC; Lin CY; Chen JW; Shiu HW; Chang LY; Hsueh HT; Chen HY; Tsai JY; Lu YH; Chang TC; Tu LW; Teng H; Chen YC; Chen CH; Wu CL
    Sci Rep; 2016 Jun; 6():28326. PubMed ID: 27325155
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Few electron limit of n-type metal oxide semiconductor single electron transistors.
    Prati E; De Michielis M; Belli M; Cocco S; Fanciulli M; Kotekar-Patil D; Ruoff M; Kern DP; Wharam DA; Verduijn J; Tettamanzi GC; Rogge S; Roche B; Wacquez R; Jehl X; Vinet M; Sanquer M
    Nanotechnology; 2012 Jun; 23(21):215204. PubMed ID: 22552118
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Strengthened Complementary Metal-Oxide-Semiconductor Logic for Small-Band-Gap Semiconductor-Based High-Performance and Low-Power Application.
    Zhao C; Zhong D; Liu L; Yang Y; Shi H; Peng LM; Zhang Z
    ACS Nano; 2020 Nov; 14(11):15267-15275. PubMed ID: 33124414
    [TBL] [Abstract][Full Text] [Related]  

  • 14. High-κ Lanthanum Zirconium Oxide Thin Film Dielectrics from Aqueous Solution Precursors.
    Woods KN; Chiang TH; Plassmeyer PN; Kast MG; Lygo AC; Grealish AK; Boettcher SW; Page CJ
    ACS Appl Mater Interfaces; 2017 Mar; 9(12):10897-10903. PubMed ID: 28262013
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Electrical characteristics of Ge-based metal-insulator-semiconductor devices with Ge3N4 dielectrics formed by plasma nitridation.
    Okamoto G; Kutsuki K; Hosoi T; Shimura T; Watanabe H
    J Nanosci Nanotechnol; 2011 Apr; 11(4):2856-60. PubMed ID: 21776643
    [TBL] [Abstract][Full Text] [Related]  

  • 16. All-amorphous-oxide transparent, flexible thin-film transistors. Efficacy of bilayer gate dielectrics.
    Liu J; Buchholz DB; Hennek JW; Chang RP; Facchetti A; Marks TJ
    J Am Chem Soc; 2010 Sep; 132(34):11934-42. PubMed ID: 20698566
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current.
    Shoute G; Afshar A; Muneshwar T; Cadien K; Barlage D
    Nat Commun; 2016 Feb; 7():10632. PubMed ID: 26842997
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Ultrathin ZrO
    Kim MJ; Pak K; Choi J; Lee TI; Hwang WS; Im SG; Cho BJ
    ACS Appl Mater Interfaces; 2019 Nov; 11(47):44513-44520. PubMed ID: 31725253
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Control of Schottky barrier heights on high-K gate dielectrics for future complementary metal-oxide semiconductor devices.
    Tse KY; Robertson J
    Phys Rev Lett; 2007 Aug; 99(8):086805. PubMed ID: 17930973
    [TBL] [Abstract][Full Text] [Related]  

  • 20. State of the Art and Future Perspectives in Advanced CMOS Technology.
    Radamson HH; Zhu H; Wu Z; He X; Lin H; Liu J; Xiang J; Kong Z; Xiong W; Li J; Cui H; Gao J; Yang H; Du Y; Xu B; Li B; Zhao X; Yu J; Dong Y; Wang G
    Nanomaterials (Basel); 2020 Aug; 10(8):. PubMed ID: 32784801
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.