These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

115 related articles for article (PubMed ID: 28820739)

  • 1. Metal-to-insulator transition induced by UV illumination in a single SnO
    Viana ER; Ribeiro GM; de Oliveira AG; González JC
    Nanotechnology; 2017 Nov; 28(44):445703. PubMed ID: 28820739
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Electrical observation of sub-band formation in SnO2 nanobelts.
    Viana ER; González JC; Ribeiro GM; de Oliveira AG
    Nanoscale; 2013 Jul; 5(14):6439-44. PubMed ID: 23740286
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Centimeter-long Ta3N5 nanobelts: synthesis, electrical transport, and photoconductive properties.
    Wu XC; Tao YR; Li L; Bando Y; Golberg D
    Nanotechnology; 2013 May; 24(17):175701. PubMed ID: 23548821
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Insulator-to-metal phase transition in a few-layered MoSe
    Pradhan NR; Garcia C; Chakrabarti B; Rosenmann D; Divan R; Sumant AV; Miller S; Hilton D; Karaiskaj D; McGill SA
    Nanoscale; 2023 Feb; 15(6):2667-2673. PubMed ID: 36652441
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Metal-insulator transition in single crystalline ZnO nanowires.
    Milano G; D'Ortenzi L; Bejtka K; Ciubini B; Porro S; Boarino L; Ricciardi C
    Nanotechnology; 2021 Apr; 32(18):185202. PubMed ID: 33503595
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Gate-Controlled Metal-Insulator Transition in TiS
    Randle M; Lipatov A; Kumar A; Kwan CP; Nathawat J; Barut B; Yin S; He K; Arabchigavkani N; Dixit R; Komesu T; Avila J; Asensio MC; Dowben PA; Sinitskii A; Singisetti U; Bird JP
    ACS Nano; 2019 Jan; 13(1):803-811. PubMed ID: 30586504
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Gate-Induced Metal-Insulator Transition in 2D van der Waals Layers of Copper Indium Selenide Based Field-Effect Transistors.
    Patil PD; Ghosh S; Wasala M; Lei S; Vajtai R; Ajayan PM; Ghosh A; Talapatra S
    ACS Nano; 2019 Nov; 13(11):13413-13420. PubMed ID: 31661261
    [TBL] [Abstract][Full Text] [Related]  

  • 8. The Sensing Properties of Single Y-Doped SnO
    Li X; Liu Y; Li S; Huang J; Wu Y; Yu D
    Nanoscale Res Lett; 2016 Dec; 11(1):470. PubMed ID: 27770426
    [TBL] [Abstract][Full Text] [Related]  

  • 9. New Material Transistor with Record-High Field-Effect Mobility among Wide-Band-Gap Semiconductors.
    Shih CW; Chin A
    ACS Appl Mater Interfaces; 2016 Aug; 8(30):19187-91. PubMed ID: 27454211
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Indium-doped SnO
    Shahid M; Wang Y; Yang J; Li T; Xing Y; Cheng J; Zhang M; Wan C; Pan W
    Nanotechnology; 2017 Aug; 28(33):335705. PubMed ID: 28607222
    [TBL] [Abstract][Full Text] [Related]  

  • 11. A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance.
    Kim H; Kwack YJ; Yun EJ; Choi WS
    Sci Rep; 2016 Sep; 6():33576. PubMed ID: 27641430
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Critical Behavior in Doping-Driven Metal-Insulator Transition on Single-Crystalline Organic Mott-FET.
    Sato Y; Kawasugi Y; Suda M; Yamamoto HM; Kato R
    Nano Lett; 2017 Feb; 17(2):708-714. PubMed ID: 28038313
    [TBL] [Abstract][Full Text] [Related]  

  • 13. High-Energy Faceted SnO₂-Coated TiO₂ Nanobelt Heterostructure for Near-Ambient Temperature-Responsive Ethanol Sensor.
    Chen G; Ji S; Li H; Kang X; Chang S; Wang Y; Yu G; Lu J; Claverie J; Sang Y; Liu H
    ACS Appl Mater Interfaces; 2015 Nov; 7(44):24950-6. PubMed ID: 26484799
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Sub-ppm Formaldehyde Detection by
    Nasriddinov A; Rumyantseva M; Marikutsa A; Gaskov A; Lee JH; Kim JH; Kim JY; Kim SS; Kim HW
    Sensors (Basel); 2019 Jul; 19(14):. PubMed ID: 31331010
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Synthesis, characterization and photocatalytic applications of N-, S-, and C-doped SnO2 nanoparticles under ultraviolet (UV) light illumination.
    Nouri A; Fakhri A
    Spectrochim Acta A Mol Biomol Spectrosc; 2015 Mar; 138():563-8. PubMed ID: 25531405
    [TBL] [Abstract][Full Text] [Related]  

  • 16. High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors.
    Movva HC; Rai A; Kang S; Kim K; Fallahazad B; Taniguchi T; Watanabe K; Tutuc E; Banerjee SK
    ACS Nano; 2015 Oct; 9(10):10402-10. PubMed ID: 26343531
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Thickness-Induced Metal-Insulator Transition in Sb-doped SnO2 Ultrathin Films: The Role of Quantum Confinement.
    Ke C; Zhu W; Zhang Z; Soon Tok E; Ling B; Pan J
    Sci Rep; 2015 Nov; 5():17424. PubMed ID: 26616286
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Photoinduced stiffening in ZnO nanobelts.
    Zhao MH; Ye ZZ; Mao SX
    Phys Rev Lett; 2009 Jan; 102(4):045502. PubMed ID: 19257439
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Low-voltage operation of ZrO2-gated n-type thin-film transistors based on a channel formed by hybrid phases of SnO and SnO2.
    Chu HC; Shen YS; Hsieh CH; Huang JH; Wu YH
    ACS Appl Mater Interfaces; 2015 Jul; 7(28):15129-37. PubMed ID: 26148216
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Beyond the metal-insulator transition in polymer electrolyte gated polymer field-effect transistors.
    Dhoot AS; Yuen JD; Heeney M; McCulloch I; Moses D; Heeger AJ
    Proc Natl Acad Sci U S A; 2006 Aug; 103(32):11834-7. PubMed ID: 16873547
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 6.