These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

227 related articles for article (PubMed ID: 28833605)

  • 41. Initial stage of cubic GaN for heterophase epitaxial growth induced on nanoscale v-grooved Si(001) in metal-organic vapor-phase epitaxy.
    Lee SC; Jiang YB; Durniak M; Wetzel C; Brueck SRJ
    Nanotechnology; 2019 Jan; 30(2):025711. PubMed ID: 30411717
    [TBL] [Abstract][Full Text] [Related]  

  • 42. Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH3 interrupted etching.
    Son JS; Honda Y; Amano H
    Opt Express; 2014 Feb; 22(3):3585-92. PubMed ID: 24663649
    [TBL] [Abstract][Full Text] [Related]  

  • 43. Comparison of Strain in GaN-Based Blue Light-Emitting Diode Grown on Silicon(111) and Sapphire Substrates.
    Jeon KS; Sung JH; Lee MW; Song HY; Lee EA; Kim SO; Choi HJ; Shin HY; Park WH; Jang YI; Kang MG; Choi YH; Lee JS; Ko DH; Ryu HY
    J Nanosci Nanotechnol; 2015 Jul; 15(7):5264-6. PubMed ID: 26373120
    [TBL] [Abstract][Full Text] [Related]  

  • 44. Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure.
    Niu G; Capellini G; Hatami F; Di Bartolomeo A; Niermann T; Hussein EH; Schubert MA; Krause HM; Zaumseil P; Skibitzki O; Lupina G; Masselink WT; Lehmann M; Xie YH; Schroeder T
    ACS Appl Mater Interfaces; 2016 Oct; 8(40):26948-26955. PubMed ID: 27642767
    [TBL] [Abstract][Full Text] [Related]  

  • 45. ScN/GaN(11̅00): A New Platform for the Epitaxy of Twin-Free Metal-Semiconductor Heterostructures.
    John P; Trampert A; Van Dinh D; Spallek D; Lähnemann J; Kaganer VM; Geelhaar L; Brandt O; Auzelle T
    Nano Lett; 2024 May; 24(21):6233-6239. PubMed ID: 38758973
    [TBL] [Abstract][Full Text] [Related]  

  • 46. Atomically flat and uniform relaxed III-V epitaxial films on silicon substrate for heterogeneous and hybrid integration.
    Holland M; van Dal M; Duriez B; Oxland R; Vellianitis G; Doornbos G; Afzalian A; Chen TK; Hsieh CH; Ramvall P; Vasen T; Yeo YC; Passlack M
    Sci Rep; 2017 Nov; 7(1):14632. PubMed ID: 29116157
    [TBL] [Abstract][Full Text] [Related]  

  • 47. Studies of Defect Structure in Epitaxial AlN/GaN Films Grown on (111) 3C-SiC.
    Serban AB; Ene VL; Dinescu D; Zai I; Djourelov N; Vasile BS; Leca V
    Nanomaterials (Basel); 2021 May; 11(5):. PubMed ID: 34069169
    [TBL] [Abstract][Full Text] [Related]  

  • 48. Direct growth of GaN layer on carbon nanotube-graphene hybrid structure and its application for light emitting diodes.
    Seo TH; Park AH; Park S; Kim YH; Lee GH; Kim MJ; Jeong MS; Lee YH; Hahn YB; Suh EK
    Sci Rep; 2015 Jan; 5():7747. PubMed ID: 25597492
    [TBL] [Abstract][Full Text] [Related]  

  • 49. Graphene-Mesoporous Si Nanocomposite as a Compliant Substrate for Heteroepitaxy.
    Boucherif AR; Boucherif A; Kolhatkar G; Ruediger A; Arès R
    Small; 2017 May; 13(18):. PubMed ID: 28296038
    [TBL] [Abstract][Full Text] [Related]  

  • 50. GaN Micromechanical Resonators with Meshed Metal Bottom Electrode.
    Ansari A; Liu CY; Lin CC; Kuo HC; Ku PC; Rais-Zadeh M
    Materials (Basel); 2015 Mar; 8(3):1204-1212. PubMed ID: 28787997
    [TBL] [Abstract][Full Text] [Related]  

  • 51. Facile Five-Step Heteroepitaxial Growth of GaAs Nanowires on Silicon Substrates and the Twin Formation Mechanism.
    Yao M; Sheng C; Ge M; Chi CY; Cong S; Nakano A; Dapkus PD; Zhou C
    ACS Nano; 2016 Feb; 10(2):2424-35. PubMed ID: 26831573
    [TBL] [Abstract][Full Text] [Related]  

  • 52. Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations.
    Lee HP; Perozek J; Rosario LD; Bayram C
    Sci Rep; 2016 Nov; 6():37588. PubMed ID: 27869222
    [TBL] [Abstract][Full Text] [Related]  

  • 53. Epitaxy of GaN Nanowires on Graphene.
    Kumaresan V; Largeau L; Madouri A; Glas F; Zhang H; Oehler F; Cavanna A; Babichev A; Travers L; Gogneau N; Tchernycheva M; Harmand JC
    Nano Lett; 2016 Aug; 16(8):4895-902. PubMed ID: 27414518
    [TBL] [Abstract][Full Text] [Related]  

  • 54. Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray Nanodiffraction.
    Richard MI; Zoellner MH; Chahine GA; Zaumseil P; Capellini G; Häberlen M; Storck P; Schülli TU; Schroeder T
    ACS Appl Mater Interfaces; 2015 Dec; 7(48):26696-700. PubMed ID: 26541318
    [TBL] [Abstract][Full Text] [Related]  

  • 55. Effects of High-Temperature Growth of Dislocation Filter Layers in GaAs-on-Si.
    Kim H; Geum DM; Ko YH; Han WS
    Nanoscale Res Lett; 2022 Dec; 17(1):126. PubMed ID: 36534366
    [TBL] [Abstract][Full Text] [Related]  

  • 56. A review on the GaN-on-Si power electronic devices.
    Zhong Y; Zhang J; Wu S; Jia L; Yang X; Liu Y; Zhang Y; Sun Q
    Fundam Res; 2022 May; 2(3):462-475. PubMed ID: 38933402
    [TBL] [Abstract][Full Text] [Related]  

  • 57. Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE.
    Krishna S; Aggarwal N; Mishra M; Maurya KK; Singh S; Dilawar N; Nagarajan S; Gupta G
    Phys Chem Chem Phys; 2016 Mar; 18(11):8005-14. PubMed ID: 26916430
    [TBL] [Abstract][Full Text] [Related]  

  • 58. The Effect of Heavy Fe-Doping on 3D Growth Mode and Fe Diffusion in GaN for High Power HEMT Application.
    Dai JJ; Mai TT; Nallasani UR; Chang SC; Hsiao HI; Wu SK; Liu CW; Wen HC; Chou WC; Wang CP; Hoang LH
    Materials (Basel); 2022 Mar; 15(6):. PubMed ID: 35329508
    [TBL] [Abstract][Full Text] [Related]  

  • 59. GaN epitaxial layers prepared on nano-patterned Si(001) substrate.
    Huang CC; Chang SJ; Kuo CH; Ko CH; Wann CH; Cheng YC; Lin WJ
    J Nanosci Nanotechnol; 2011 Feb; 11(2):1248-51. PubMed ID: 21456167
    [TBL] [Abstract][Full Text] [Related]  

  • 60. Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition.
    Cheng J; Yang X; Sang L; Guo L; Zhang J; Wang J; He C; Zhang L; Wang M; Xu F; Tang N; Qin Z; Wang X; Shen B
    Sci Rep; 2016 Mar; 6():23020. PubMed ID: 26960730
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 12.