These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
207 related articles for article (PubMed ID: 28850213)
1. Design of Oxygen Vacancy Configuration for Memristive Systems. Schmitt R; Spring J; Korobko R; Rupp JLM ACS Nano; 2017 Sep; 11(9):8881-8891. PubMed ID: 28850213 [TBL] [Abstract][Full Text] [Related]
2. Deterministic Role of Concentration Surplus of Cation Vacancy over Anion Vacancy in Bipolar Memristive NiO. Sun Z; Zhao Y; He M; Gu L; Ma C; Jin K; Zhao D; Luo N; Zhang Q; Wang N; Duan W; Nan CW ACS Appl Mater Interfaces; 2016 May; 8(18):11583-91. PubMed ID: 27096884 [TBL] [Abstract][Full Text] [Related]
3. High-Performance Single-Active-Layer Memristor Based on an Ultrananocrystalline Oxygen-Deficient TiO Srivastava S; Thomas JP; Heinig NF; Leung KT ACS Appl Mater Interfaces; 2017 Oct; 9(42):36989-36996. PubMed ID: 28975787 [TBL] [Abstract][Full Text] [Related]
4. Vacancy-Engineered Nickel Ferrite Forming-Free Low-Voltage Resistive Switches for Neuromorphic Circuits. R RK; Kalaboukhov A; Weng YC; Rathod KN; Johansson T; Lindblad A; Kamalakar MV; Sarkar T ACS Appl Mater Interfaces; 2024 Apr; 16(15):19225-19234. PubMed ID: 38579143 [TBL] [Abstract][Full Text] [Related]
5. Controllable dynamics of oxygen vacancies through extrinsic doping for superior catalytic activities. Younis A; Shirsath SE; Shabbir B; Li S Nanoscale; 2018 Oct; 10(39):18576-18585. PubMed ID: 30259037 [TBL] [Abstract][Full Text] [Related]
6. Comprehensive physical model of dynamic resistive switching in an oxide memristor. Kim S; Choi S; Lu W ACS Nano; 2014 Mar; 8(3):2369-76. PubMed ID: 24571386 [TBL] [Abstract][Full Text] [Related]
7. Tuning resistive switching characteristics of tantalum oxide memristors through Si doping. Kim S; Choi S; Lee J; Lu WD ACS Nano; 2014 Oct; 8(10):10262-9. PubMed ID: 25255038 [TBL] [Abstract][Full Text] [Related]
8. Tuning Ionic Transport in Memristive Devices by Graphene with Engineered Nanopores. Lee J; Du C; Sun K; Kioupakis E; Lu WD ACS Nano; 2016 Mar; 10(3):3571-9. PubMed ID: 26954948 [TBL] [Abstract][Full Text] [Related]
9. Multi-Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration. Lü W; Li C; Zheng L; Xiao J; Lin W; Li Q; Wang XR; Huang Z; Zeng S; Han K; Zhou W; Zeng K; Chen J; Ariando ; Cao W; Venkatesan T Adv Mater; 2017 Jun; 29(24):. PubMed ID: 28439926 [TBL] [Abstract][Full Text] [Related]
10. A correlation between the ionic conductivities and the formation enthalpies of trivalent-doped ceria at relatively low temperatures. Avila-Paredes HJ; Shvareva T; Chen W; Navrotsky A; Kim S Phys Chem Chem Phys; 2009 Oct; 11(38):8580-5. PubMed ID: 19774290 [TBL] [Abstract][Full Text] [Related]
11. Oxygen vacancy engineering of TaO Palhares JHQ; Beilliard Y; Alibart F; Bonturim E; de Florio DZ; Fonseca FC; Drouin D; Ferlauto AS Nanotechnology; 2021 Jul; 32(40):. PubMed ID: 34167106 [TBL] [Abstract][Full Text] [Related]
16. Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO Zhang H; Yoo S; Menzel S; Funck C; Cüppers F; Wouters DJ; Hwang CS; Waser R; Hoffmann-Eifert S ACS Appl Mater Interfaces; 2018 Sep; 10(35):29766-29778. PubMed ID: 30088755 [TBL] [Abstract][Full Text] [Related]
17. In situ control of oxygen vacancies in TiO₂ by atomic layer deposition for resistive switching devices. Park SJ; Lee JP; Jang JS; Rhu H; Yu H; You BY; Kim CS; Kim KJ; Cho YJ; Baik S; Lee W Nanotechnology; 2013 Jul; 24(29):295202. PubMed ID: 23799660 [TBL] [Abstract][Full Text] [Related]
18. Modified Dynamic Physical Model of Valence Change Mechanism Memristors. Park J; Choi J; Kim G; Kim G; Kim GS; Song H; Kim YS; Lee Y; Rhee H; Lee HM; Hwang CS; Kim KM ACS Appl Mater Interfaces; 2022 Aug; 14(31):35949-35958. PubMed ID: 35900018 [TBL] [Abstract][Full Text] [Related]
19. Oxygen vacancy injection-induced resistive switching in combined mobile and static gradient doped tin oxide nanorods. Herzog T; Weitzel N; Polarz S Nanoscale; 2020 Sep; 12(35):18322-18332. PubMed ID: 32869823 [TBL] [Abstract][Full Text] [Related]
20. Quantitative Observation of Threshold Defect Behavior in Memristive Devices with Operando X-ray Microscopy. Liu H; Dong Y; Cherukara MJ; Sasikumar K; Narayanan B; Cai Z; Lai B; Stan L; Hong S; Chan MKY; Sankaranarayanan SKRS; Zhou H; Fong DD ACS Nano; 2018 May; 12(5):4938-4945. PubMed ID: 29715007 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]