These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

172 related articles for article (PubMed ID: 28855562)

  • 1. Customized binary and multi-level HfO
    He W; Sun H; Zhou Y; Lu K; Xue K; Miao X
    Sci Rep; 2017 Aug; 7(1):10070. PubMed ID: 28855562
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Thousands of conductance levels in memristors integrated on CMOS.
    Rao M; Tang H; Wu J; Song W; Zhang M; Yin W; Zhuo Y; Kiani F; Chen B; Jiang X; Liu H; Chen HY; Midya R; Ye F; Jiang H; Wang Z; Wu M; Hu M; Wang H; Xia Q; Ge N; Li J; Yang JJ
    Nature; 2023 Mar; 615(7954):823-829. PubMed ID: 36991190
    [TBL] [Abstract][Full Text] [Related]  

  • 3. A Multi-level Memristor Based on Al-Doped HfO
    Wu L; Liu H; Li J; Wang S; Wang X
    Nanoscale Res Lett; 2019 May; 14(1):177. PubMed ID: 31139948
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Multiphase Reset Induced Reliable Dual-Mode Resistance Switching of the Ta/HfO
    Shin DH; Park H; Ghenzi N; Kim YR; Cheong S; Shim SK; Yim S; Park TW; Song H; Lee JK; Kim BS; Park T; Hwang CS
    ACS Appl Mater Interfaces; 2024 Apr; 16(13):16462-16473. PubMed ID: 38513155
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering.
    Ismail M; Mahata C; Kang M; Kim S
    Nanoscale Res Lett; 2022 Jun; 17(1):61. PubMed ID: 35749003
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO
    Mahata C; Kang M; Kim S
    Nanomaterials (Basel); 2020 Oct; 10(10):. PubMed ID: 33092042
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Stochastic memristive devices for computing and neuromorphic applications.
    Gaba S; Sheridan P; Zhou J; Choi S; Lu W
    Nanoscale; 2013 Jul; 5(13):5872-8. PubMed ID: 23698627
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Threshold Switching in Forming-Free Anodic Memristors Grown on Hf-Nb Combinatorial Thin-Film Alloys.
    Zrinski I; Zavašnik J; Duchoslav J; Hassel AW; Mardare AI
    Nanomaterials (Basel); 2022 Nov; 12(22):. PubMed ID: 36432230
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Electrolyte-Dependent Modification of Resistive Switching in Anodic Hafnia.
    Zrinski I; Mardare CC; Jinga LI; Kollender JP; Socol G; Minenkov A; Hassel AW; Mardare AI
    Nanomaterials (Basel); 2021 Mar; 11(3):. PubMed ID: 33800460
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Low-Power Memristive Logic Device Enabled by Controllable Oxidation of 2D HfSe
    Liu L; Li Y; Huang X; Chen J; Yang Z; Xue KH; Xu M; Chen H; Zhou P; Miao X
    Adv Sci (Weinh); 2021 Aug; 8(15):e2005038. PubMed ID: 34050639
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Interfacial Resistive Switching of Niobium-Titanium Anodic Memristors with Self-Rectifying Capabilities.
    Knapic D; Minenkov A; Atanasova E; Zrinski I; Hassel AW; Mardare AI
    Nanomaterials (Basel); 2024 Feb; 14(4):. PubMed ID: 38392754
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Parylene-based memristive crossbar structures with multilevel resistive switching for neuromorphic computing.
    Shvetsov BS; Minnekhanov AA; Emelyanov AV; Ilyasov AI; Grishchenko YV; Zanaveskin ML; Nesmelov AA; Streltsov DR; Patsaev TD; Vasiliev AL; Rylkov VV; Demin VA
    Nanotechnology; 2022 Mar; 33(25):. PubMed ID: 35276689
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO2 Memristor.
    Jiang H; Han L; Lin P; Wang Z; Jang MH; Wu Q; Barnell M; Yang JJ; Xin HL; Xia Q
    Sci Rep; 2016 Jun; 6():28525. PubMed ID: 27334443
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Room-Temperature Fabricated Multilevel Nonvolatile Lead-Free Cesium Halide Memristors for Reconfigurable In-Memory Computing.
    Su TK; Cheng WK; Chen CY; Wang WC; Chuang YT; Tan GH; Lin HC; Hou CH; Liu CM; Chang YC; Shyue JJ; Wu KC; Lin HW
    ACS Nano; 2022 Aug; 16(8):12979-12990. PubMed ID: 35815946
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Reconfigurable Ag/HfO
    Chen J; Liu X; Liu C; Tang L; Bu T; Jiang B; Qing Y; Xie Y; Wang Y; Shan Y; Li R; Ye C; Liao L
    Nano Lett; 2024 May; 24(17):5371-5378. PubMed ID: 38647348
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Heterogeneous reservoir computing in second-order Ta
    Ghenzi N; Park TW; Kim SS; Kim HJ; Jang YH; Woo KS; Hwang CS
    Nanoscale Horiz; 2024 Feb; 9(3):427-437. PubMed ID: 38086679
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Crossbar Nanoscale HfO2-Based Electronic Synapses.
    Matveyev Y; Kirtaev R; Fetisova A; Zakharchenko S; Negrov D; Zenkevich A
    Nanoscale Res Lett; 2016 Dec; 11(1):147. PubMed ID: 26979725
    [TBL] [Abstract][Full Text] [Related]  

  • 18. An electronic synaptic device based on HfO
    Liu J; Yang H; Ji Y; Ma Z; Chen K; Zhang X; Zhang H; Sun Y; Huang X; Oda S
    Nanotechnology; 2018 Oct; 29(41):415205. PubMed ID: 30051885
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications.
    Wang LG; Qian X; Cao YQ; Cao ZY; Fang GY; Li AD; Wu D
    Nanoscale Res Lett; 2015; 10():135. PubMed ID: 25852426
    [TBL] [Abstract][Full Text] [Related]  

  • 20. High Temperature CsPbBr
    Liu Z; Cheng P; Li Y; Kang R; Zhang Z; Zuo Z; Zhao J
    ACS Appl Mater Interfaces; 2021 Dec; 13(49):58885-58897. PubMed ID: 34870980
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.