157 related articles for article (PubMed ID: 28901127)
1. Barrier-Layer Optimization for Enhanced GaN-on-Diamond Device Cooling.
Zhou Y; Anaya J; Pomeroy J; Sun H; Gu X; Xie A; Beam E; Becker M; Grotjohn TA; Lee C; Kuball M
ACS Appl Mater Interfaces; 2017 Oct; 9(39):34416-34422. PubMed ID: 28901127
[TBL] [Abstract][Full Text] [Related]
2. Crystalline Interlayers for Reducing the Effective Thermal Boundary Resistance in GaN-on-Diamond.
Field DE; Cuenca JA; Smith M; Fairclough SM; Massabuau FC; Pomeroy JW; Williams O; Oliver RA; Thayne I; Kuball M
ACS Appl Mater Interfaces; 2020 Dec; 12(48):54138-54145. PubMed ID: 33196180
[TBL] [Abstract][Full Text] [Related]
3. Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices.
Yates L; Anderson J; Gu X; Lee C; Bai T; Mecklenburg M; Aoki T; Goorsky MS; Kuball M; Piner EL; Graham S
ACS Appl Mater Interfaces; 2018 Jul; 10(28):24302-24309. PubMed ID: 29939717
[TBL] [Abstract][Full Text] [Related]
4. Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling.
Malakoutian M; Field DE; Hines NJ; Pasayat S; Graham S; Kuball M; Chowdhury S
ACS Appl Mater Interfaces; 2021 Dec; 13(50):60553-60560. PubMed ID: 34875169
[TBL] [Abstract][Full Text] [Related]
5. Interfacial Thermal Conductance across Room-Temperature-Bonded GaN/Diamond Interfaces for GaN-on-Diamond Devices.
Cheng Z; Mu F; Yates L; Suga T; Graham S
ACS Appl Mater Interfaces; 2020 Feb; 12(7):8376-8384. PubMed ID: 31986013
[TBL] [Abstract][Full Text] [Related]
6. Thick, Adherent Diamond Films on AlN with Low Thermal Barrier Resistance.
Mandal S; Yuan C; Massabuau F; Pomeroy JW; Cuenca J; Bland H; Thomas E; Wallis D; Batten T; Morgan D; Oliver R; Kuball M; Williams OA
ACS Appl Mater Interfaces; 2019 Oct; 11(43):40826-40834. PubMed ID: 31603642
[TBL] [Abstract][Full Text] [Related]
7. High Thermal Stability and Low Thermal Resistance of Large Area GaN/3C-SiC/Diamond Junctions for Practical Device Processes.
Kagawa R; Cheng Z; Kawamura K; Ohno Y; Moriyama C; Sakaida Y; Ouchi S; Uratani H; Inoue K; Nagai Y; Shigekawa N; Liang J
Small; 2024 Mar; 20(13):e2305574. PubMed ID: 37964293
[TBL] [Abstract][Full Text] [Related]
8. Probing Growth-Induced Anisotropic Thermal Transport in High-Quality CVD Diamond Membranes by Multifrequency and Multiple-Spot-Size Time-Domain Thermoreflectance.
Cheng Z; Bougher T; Bai T; Wang SY; Li C; Yates L; Foley BM; Goorsky M; Cola BA; Faili F; Graham S
ACS Appl Mater Interfaces; 2018 Feb; 10(5):4808-4815. PubMed ID: 29328632
[TBL] [Abstract][Full Text] [Related]
9. Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers.
Guo H; Li Y; Yu X; Zhou J; Kong Y
Micromachines (Basel); 2022 Sep; 13(9):. PubMed ID: 36144109
[TBL] [Abstract][Full Text] [Related]
10. Thermal Transport and Mechanical Stress Mapping of a Compression Bonded GaN/Diamond Interface for Vertical Power Devices.
Delmas W; Jarzembski A; Bahr M; McDonald A; Hodges W; Lu P; Deitz J; Ziade E; Piontkowski ZT; Yates L
ACS Appl Mater Interfaces; 2024 Feb; 16(8):11003-11012. PubMed ID: 38373710
[TBL] [Abstract][Full Text] [Related]
11. High Thermal Boundary Conductance across Bonded Heterogeneous GaN-SiC Interfaces.
Mu F; Cheng Z; Shi J; Shin S; Xu B; Shiomi J; Graham S; Suga T
ACS Appl Mater Interfaces; 2019 Sep; 11(36):33428-33434. PubMed ID: 31408316
[TBL] [Abstract][Full Text] [Related]
12. Thermal Boundary Resistance Extraction of GaN-on-Diamond Substrate from Transmission Line Method Pattern Using Micro-Raman Spectroscopy and Thermal Simulation.
Ki RS; Seo KS; Cha HY
J Nanosci Nanotechnol; 2021 Aug; 21(8):4434-4437. PubMed ID: 33714340
[TBL] [Abstract][Full Text] [Related]
13. Monitoring of the Initial Stages of Diamond Growth on Aluminum Nitride Using In Situ Spectroscopic Ellipsometry.
Leigh W; Mandal S; Cuenca JA; Wallis D; Hinz AM; Oliver RA; Thomas ELH; Williams O
ACS Omega; 2023 Aug; 8(33):30442-30449. PubMed ID: 37636904
[TBL] [Abstract][Full Text] [Related]
14. Enhanced Thermal Boundary Conductance across GaN/SiC Interfaces with AlN Transition Layers.
Li R; Hussain K; Liao ME; Huynh K; Hoque MSB; Wyant S; Koh YR; Xu Z; Wang Y; Luccioni DP; Cheng Z; Shi J; Lee E; Graham S; Henry A; Hopkins PE; Goorsky MS; Khan MA; Luo T
ACS Appl Mater Interfaces; 2024 Feb; 16(6):8109-8118. PubMed ID: 38315970
[TBL] [Abstract][Full Text] [Related]
15. Seed Dibbling Method for the Growth of High-Quality Diamond on GaN.
Soleimanzadeh R; Naamoun M; Floriduz A; Khadar RA; van Erp R; Matioli E
ACS Appl Mater Interfaces; 2021 Sep; 13(36):43516-43523. PubMed ID: 34464085
[TBL] [Abstract][Full Text] [Related]
16. Robust Thermal Transport across the Surface-Active Bonding SiC-on-SiC.
Ma G; Xiao X; Meng B; Ma Y; Xing X; Wang X; Mu F; Yuan C
ACS Appl Mater Interfaces; 2024 Apr; ():. PubMed ID: 38598525
[TBL] [Abstract][Full Text] [Related]
17. Properties for Thermally Conductive Interfaces with Wide Band Gap Materials.
Khan S; Angeles F; Wright J; Vishwakarma S; Ortiz VH; Guzman E; Kargar F; Balandin AA; Smith DJ; Jena D; Xing HG; Wilson R
ACS Appl Mater Interfaces; 2022 Aug; 14(31):36178-36188. PubMed ID: 35895030
[TBL] [Abstract][Full Text] [Related]
18. Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect Transistors.
Lv YJ; Song XB; Wang YG; Fang YL; Feng ZH
Nanoscale Res Lett; 2016 Dec; 11(1):373. PubMed ID: 27553382
[TBL] [Abstract][Full Text] [Related]
19. Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design.
Liang J; Kobayashi A; Shimizu Y; Ohno Y; Kim SW; Koyama K; Kasu M; Nagai Y; Shigekawa N
Adv Mater; 2021 Oct; 33(43):e2104564. PubMed ID: 34498296
[TBL] [Abstract][Full Text] [Related]
20. Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers.
Zhao G; Wang L; Yang S; Li H; Wei H; Han D; Wang Z
Sci Rep; 2016 Feb; 6():20787. PubMed ID: 26861595
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
