These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

219 related articles for article (PubMed ID: 29041128)

  • 1. Explanation of low efficiency droop in semipolar (202¯1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficients.
    Monavarian M; Rashidi A; Aragon A; Oh SH; Nami M; DenBaars SP; Feezell D
    Opt Express; 2017 Aug; 25(16):19343-19353. PubMed ID: 29041128
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Influence of carrier screening and band filling effects on efficiency droop of InGaN light emitting diodes.
    Wang L; Lu C; Lu J; Liu L; Liu N; Chen Y; Zhang Y; Gu E; Hu X
    Opt Express; 2011 Jul; 19(15):14182-7. PubMed ID: 21934781
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes.
    Okur S; Nami M; Rishinaramangalam AK; Oh SH; DenBaars SP; Liu S; Brener I; Feezell DF
    Opt Express; 2017 Feb; 25(3):2178-2186. PubMed ID: 29519065
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements.
    Rashidi A; Monavarian M; Aragon A; Feezell D
    Sci Rep; 2019 Dec; 9(1):19921. PubMed ID: 31882667
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Reduced Auger Coefficient through Efficient Carrier Capture and Improved Radiative Efficiency from the Broadband Optical Cavity: A Mechanism for Potential Droop Mitigation in InGaN/GaN LEDs.
    Aggarwal T; Udai A; Saha PK; Ganguly S; Bhattacharya P; Saha D
    ACS Appl Mater Interfaces; 2022 Mar; 14(11):13812-13819. PubMed ID: 35262330
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Nonradiative recombination--critical in choosing quantum well number for InGaN/GaN light-emitting diodes.
    Zhang YP; Zhang ZH; Liu W; Tan ST; Ju ZG; Zhang XL; Ji Y; Wang LC; Kyaw Z; Hasanov N; Zhu BB; Lu SP; Sun XW; Demir HV
    Opt Express; 2015 Feb; 23(3):A34-42. PubMed ID: 25836251
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates.
    Li H; Khoury M; Bonef B; Alhassan AI; Mughal AJ; Azimah E; Samsudin MEA; De Mierry P; Nakamura S; Speck JS; DenBaars SP
    ACS Appl Mater Interfaces; 2017 Oct; 9(41):36417-36422. PubMed ID: 28960058
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Disentangling the Impact of Point Defect Density and Carrier Localization-Enhanced Auger Recombination on Efficiency Droop in (In,Ga)N/GaN Quantum Wells.
    Barrett RM; McMahon JM; Ahumada-Lazo R; Alanis JA; Parkinson P; Schulz S; Kappers MJ; Oliver RA; Binks D
    ACS Photonics; 2023 Aug; 10(8):2632-2640. PubMed ID: 37602288
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Effective suppression of efficiency droop in GaN-based light-emitting diodes: role of significant reduction of carrier density and built-in field.
    Yoo YS; Na JH; Son SJ; Cho YH
    Sci Rep; 2016 Oct; 6():34586. PubMed ID: 27756916
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics.
    Zhao C; Ng TK; ElAfandy RT; Prabaswara A; Consiglio GB; Ajia IA; Roqan IS; Janjua B; Shen C; Eid J; Alyamani AY; El-Desouki MM; Ooi BS
    Nano Lett; 2016 Jul; 16(7):4616-23. PubMed ID: 27352143
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Efficiency droop in zincblende InGaN/GaN quantum wells.
    Dyer D; Church SA; Ahumada-Lazo R; Kappers MJ; Halsall MP; Parkinson P; Wallis DJ; Oliver RA; Binks DJ
    Nanoscale; 2024 Jul; 16(29):13953-13961. PubMed ID: 38980687
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Spectrally-resolved internal quantum efficiency and carrier dynamics of semipolar [Formula: see text] core-shell triangular nanostripe GaN/InGaN LEDs.
    Okur S; Rishinaramangalam AK; Mishkat-Ul-Masabih S; Nami M; Liu S; Brener I; Brueck SRJ; Feezell DF
    Nanotechnology; 2018 Jun; 29(23):235206. PubMed ID: 29557788
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Electrically driven green, olivine, and amber color nanopyramid light emitting diodes.
    Chang SP; Chang JR; Sou KP; Liu MC; Cheng YJ; Kuo HC; Chang CY
    Opt Express; 2013 Oct; 21(20):23030-5. PubMed ID: 24104218
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Recent Advances in Nonpolar and Semipolar InGaN Light-Emitting Diodes (LEDs).
    Jang J; Woo S; Min D; Nam O
    J Nanosci Nanotechnol; 2015 Mar; 15(3):1895-906. PubMed ID: 26413605
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods.
    Shi C; Zhang C; Yang F; Park MJ; Kwak JS; Jung S; Choi YH; Wang X; Xiao M
    Opt Express; 2014 May; 22 Suppl 3():A790-9. PubMed ID: 24922386
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Temperature-dependent nonradiative recombination processes in GaN-based nanowire white-light-emitting diodes on silicon.
    Nguyen HP; Djavid M; Cui K; Mi Z
    Nanotechnology; 2012 May; 23(19):194012. PubMed ID: 22539212
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Effect of Auger recombination and leakage on the droop in InGaN/GaN quantum well LEDs.
    Römer F; Witzigmann B
    Opt Express; 2014 Oct; 22 Suppl 6():A1440-52. PubMed ID: 25607301
    [TBL] [Abstract][Full Text] [Related]  

  • 18. A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes.
    Wang L; Jin J; Mi C; Hao Z; Luo Y; Sun C; Han Y; Xiong B; Wang J; Li H
    Materials (Basel); 2017 Oct; 10(11):. PubMed ID: 29072611
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires.
    You G; Liu J; Jiang Z; Wang L; El-Masry NA; Hosalli AM; Bedair SM; Xu J
    Opt Lett; 2014 Mar; 39(6):1501-4. PubMed ID: 24690823
    [TBL] [Abstract][Full Text] [Related]  

  • 20. A comparative study of efficiency droop and internal electric field for InGaN blue lighting-emitting diodes on silicon and sapphire substrates.
    Ryu HY; Jeon KS; Kang MG; Yuh HK; Choi YH; Lee JS
    Sci Rep; 2017 Apr; 7():44814. PubMed ID: 28401941
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 11.