These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

90 related articles for article (PubMed ID: 29059050)

  • 1. Improvement of SET variability in TaO
    Schönhals A; Waser R; Wouters DJ
    Nanotechnology; 2017 Nov; 28(46):465203. PubMed ID: 29059050
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Voltage divider effect for the improvement of variability and endurance of TaO(x) memristor.
    Kim KM; Yang JJ; Strachan JP; Grafals EM; Ge N; Melendez ND; Li Z; Williams RS
    Sci Rep; 2016 Feb; 6():20085. PubMed ID: 26830763
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Voltage-polarity dependent multi-mode resistive switching on sputtered MgO nanostructures.
    Dias C; Guerra LM; Bordalo BD; Lv H; Ferraria AM; Botelho do Rego AM; Cardoso S; Freitas PP; Ventura J
    Phys Chem Chem Phys; 2017 May; 19(17):10898-10904. PubMed ID: 28401238
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Effect of electrode materials on AlN-based bipolar and complementary resistive switching.
    Chen C; Gao S; Tang G; Fu H; Wang G; Song C; Zeng F; Pan F
    ACS Appl Mater Interfaces; 2013 Mar; 5(5):1793-9. PubMed ID: 23422310
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta2O5-Ta system.
    Gao S; Zeng F; Wang M; Wang G; Song C; Pan F
    Phys Chem Chem Phys; 2015 May; 17(19):12849-56. PubMed ID: 25907552
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Thin TiO
    Li XY; Shao XL; Wang YC; Jiang H; Hwang CS; Zhao JS
    Nanoscale; 2017 Feb; 9(6):2358-2368. PubMed ID: 28144676
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Impact of oxygen exchange reaction at the ohmic interface in Ta
    Kim W; Menzel S; Wouters DJ; Guo Y; Robertson J; Roesgen B; Waser R; Rana V
    Nanoscale; 2016 Oct; 8(41):17774-17781. PubMed ID: 27523172
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Understanding the Reversible Transition of Unipolar and Bipolar Resistive Switching Characteristics in Solution-Derived Nanocrystalline Au-Co
    Yao C; Li J; Zhang H; Tian T
    ACS Omega; 2024 Aug; 9(31):33941-33948. PubMed ID: 39130581
    [TBL] [Abstract][Full Text] [Related]  

  • 9. A study on the resistance switching of Ag
    Lee TS; Lee NJ; Abbas H; Hu Q; Yoon TS; Lee HH; Le Shim E; Kang CJ
    Nanotechnology; 2018 Jan; 29(3):035202. PubMed ID: 29251266
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Nanoscale cation motion in TaO(x), HfO(x) and TiO(x) memristive systems.
    Wedig A; Luebben M; Cho DY; Moors M; Skaja K; Rana V; Hasegawa T; Adepalli KK; Yildiz B; Waser R; Valov I
    Nat Nanotechnol; 2016 Jan; 11(1):67-74. PubMed ID: 26414197
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO
    Zhang H; Yoo S; Menzel S; Funck C; Cüppers F; Wouters DJ; Hwang CS; Waser R; Hoffmann-Eifert S
    ACS Appl Mater Interfaces; 2018 Sep; 10(35):29766-29778. PubMed ID: 30088755
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Effect of nanopyramid bottom electrodes on bipolar resistive switching phenomena in nickel nitride films-based crossbar arrays.
    Kim HD; Yun MJ; Hong SM; Kim TG
    Nanotechnology; 2014 Mar; 25(12):125201. PubMed ID: 24569107
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Roles of conducting filament and non-filament regions in the Ta
    Park TH; Kim HJ; Park WY; Kim SG; Choi BJ; Hwang CS
    Nanoscale; 2017 May; 9(18):6010-6019. PubMed ID: 28443901
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Electrode-induced digital-to-analog resistive switching in TaO x -based RRAM devices.
    Li X; Wu H; Bin Gao ; Wu W; Wu D; Deng N; Cai J; Qian H
    Nanotechnology; 2016 Jul; 27(30):305201. PubMed ID: 27302281
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Memory window engineering of Ta2O5-x oxide-based resistive switches via incorporation of various insulating frames.
    Lee AR; Baek GH; Kim TY; Ko WB; Yang SM; Kim J; Im HS; Hong JP
    Sci Rep; 2016 Jul; 6():30333. PubMed ID: 27451943
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Ionic bipolar resistive switching modes determined by the preceding unipolar resistive switching reset behavior in Pt/TiO2/Pt.
    Yoon KJ; Song SJ; Seok JY; Yoon JH; Kim GH; Lee JH; Hwang CS
    Nanotechnology; 2013 Apr; 24(14):145201. PubMed ID: 23507958
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Tunable multilevel storage of complementary resistive switching on single-step formation of ZnO/ZnWO(x) bilayer structure via interfacial engineering.
    Lin SM; Tseng JY; Su TY; Shih YC; Huang JS; Huang CH; Lin SJ; Chueh YL
    ACS Appl Mater Interfaces; 2014 Oct; 6(20):17686-93. PubMed ID: 25208587
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Temperature effects on the switching kinetics of a Cu-Ta2O5-based atomic switch.
    Tsuruoka T; Terabe K; Hasegawa T; Aono M
    Nanotechnology; 2011 Jun; 22(25):254013. PubMed ID: 21572189
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Silver/(sub-10 nm)hafnium-oxide-based resistive switching devices on silicon: characteristics and switching mechanism.
    Saylan S; Jaoude MA; Humood K; Ravaux F; Shehhi HFA; Mohammad B
    Nanotechnology; 2020 Apr; 31(16):165202. PubMed ID: 31914429
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Forming and switching mechanisms of a cation-migration-based oxide resistive memory.
    Tsuruoka T; Terabe K; Hasegawa T; Aono M
    Nanotechnology; 2010 Oct; 21(42):425205. PubMed ID: 20864781
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 5.