These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

164 related articles for article (PubMed ID: 29123020)

  • 21. Surface effects on the crystallization kinetics of amorphous antimony.
    Shen X; Zhou Y; Zhang H; Deringer VL; Mazzarello R; Zhang W
    Nanoscale; 2023 Sep; 15(37):15259-15267. PubMed ID: 37674458
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Ultrafast switching in nanoscale phase-change random access memory with superlattice-like structures.
    Loke D; Shi L; Wang W; Zhao R; Yang H; Ng LT; Lim KG; Chong TC; Yeo YC
    Nanotechnology; 2011 Jun; 22(25):254019. PubMed ID: 21572204
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Effect of vacancy ordering on the grain growth of Ge
    Liu C; Tang Q; Zheng Y; Zhao J; Song W; Cheng Y
    Nanotechnology; 2023 Feb; 34(15):. PubMed ID: 36652702
    [TBL] [Abstract][Full Text] [Related]  

  • 24. The Effect of Carbon Doping on the Crystal Structure and Electrical Properties of Sb
    Zhang J; Rong N; Xu P; Xiao Y; Lu A; Song W; Song S; Song Z; Liang Y; Wu L
    Nanomaterials (Basel); 2023 Feb; 13(4):. PubMed ID: 36839039
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Stabilizing amorphous Sb by adding alien seeds for durable memory materials.
    Xu M; Li B; Xu K; Tong H; Cheng X; Xu M; Miao X
    Phys Chem Chem Phys; 2019 Feb; 21(8):4494-4500. PubMed ID: 30734792
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Inherent Simple Cubic Lattice Being Responsible for Ultrafast Solid-Phase Change of Ge
    Song WX; Liu ZP; Liu LM
    J Phys Chem Lett; 2017 Jun; 8(12):2560-2564. PubMed ID: 28535351
    [TBL] [Abstract][Full Text] [Related]  

  • 27. "Stickier"-Surface Sb
    Feng J; Lotnyk A; Bryja H; Wang X; Xu M; Lin Q; Cheng X; Xu M; Tong H; Miao X
    ACS Appl Mater Interfaces; 2020 Jul; 12(29):33397-33407. PubMed ID: 32597166
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Sc-Centered Octahedron Enables High-Speed Phase Change Memory with Improved Data Retention and Reduced Power Consumption.
    Wang Y; Guo T; Liu G; Li T; Lv S; Song S; Cheng Y; Song W; Ren K; Song Z
    ACS Appl Mater Interfaces; 2019 Mar; 11(11):10848-10855. PubMed ID: 30810295
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Toward the Speed Limit of Phase-Change Memory.
    Shen J; Song W; Ren K; Song Z; Zhou P; Zhu M
    Adv Mater; 2023 Mar; 35(11):e2208065. PubMed ID: 36719053
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Ultrafast phase-change logic device driven by melting processes.
    Loke D; Skelton JM; Wang WJ; Lee TH; Zhao R; Chong TC; Elliott SR
    Proc Natl Acad Sci U S A; 2014 Sep; 111(37):13272-7. PubMed ID: 25197044
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Redefining the Speed Limit of Phase Change Memory Revealed by Time-resolved Steep Threshold-Switching Dynamics of AgInSbTe Devices.
    Shukla KD; Saxena N; Durai S; Manivannan A
    Sci Rep; 2016 Nov; 6():37868. PubMed ID: 27886266
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Flow-Directed Crystallization for Printed Electronics.
    Qu G; Kwok JJ; Diao Y
    Acc Chem Res; 2016 Dec; 49(12):2756-2764. PubMed ID: 27993010
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Transient Structures and Possible Limits of Data Recording in Phase-Change Materials.
    Hu J; Vanacore GM; Yang Z; Miao X; Zewail AH
    ACS Nano; 2015 Jul; 9(7):6728-37. PubMed ID: 26035229
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Reactive ion etching of Si(x)Sb2Te in CF4/Ar plasma for nonvolatile phase-change memory device.
    Gu Y; Song S; Song Z; Cheng Y; Liu X; Du X; Liu B; Feng S
    J Nanosci Nanotechnol; 2013 Feb; 13(2):1594-7. PubMed ID: 23646688
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Crystallization from the amorphous state: nucleation-growth decoupling, polymorphism interplay, and the role of interfaces.
    Descamps M; Dudognon E
    J Pharm Sci; 2014 Sep; 103(9):2615-2628. PubMed ID: 24902677
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Nanophase change for data storage applications.
    Shi LP; Chong TC
    J Nanosci Nanotechnol; 2007 Jan; 7(1):65-93. PubMed ID: 17455476
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Laser desorption time-of-flight mass spectrometry of atomic switch memory Ge2Sb2Te5 bulk materials and its thin films.
    Houška J; Peña-Méndez EM; Kolář J; Přikryl J; Pavlišta M; Frumar M; Wágner T; Havel J
    Rapid Commun Mass Spectrom; 2014 Apr; 28(7):699-704. PubMed ID: 24573800
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Introducing uncertainty analysis of nucleation and crystal growth models in Process Analytical Technology (PAT) system design of crystallization processes.
    Samad NA; Sin G; Gernaey KV; Gani R
    Eur J Pharm Biopharm; 2013 Nov; 85(3 Pt B):911-29. PubMed ID: 23770430
    [TBL] [Abstract][Full Text] [Related]  

  • 39. A scheme for enabling the ultimate speed of threshold switching in phase change memory devices.
    Saxena N; Raghunathan R; Manivannan A
    Sci Rep; 2021 Mar; 11(1):6111. PubMed ID: 33731824
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Amorphous calcium phosphate phase-mediated crystal nucleation kinetics and pathway.
    Jiang S; Pan H; Chen Y; Xu X; Tang R
    Faraday Discuss; 2015; 179():451-61. PubMed ID: 25876510
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 9.