61 related articles for article (PubMed ID: 29124372)
1. Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period In
Wang HC; Chen MC; Lin YS; Lu MY; Lin KI; Cheng YC
Nanoscale Res Lett; 2017 Nov; 12(1):591. PubMed ID: 29124372
[TBL] [Abstract][Full Text] [Related]
2. Strategically constructed AlGaN doping barriers for efficient deep ultraviolet light-emitting diodes.
Zhang Z; Zhou Q; Liu X; Lv Z; Tang B; Geng H; Qi S; Zhou S
Opt Lett; 2024 Apr; 49(8):2049-2052. PubMed ID: 38621073
[TBL] [Abstract][Full Text] [Related]
3. Indium gallium nitride-based ultraviolet, blue, and green light-emitting diodes functionalized with shallow periodic hole patterns.
Jeong H; Salas-Montiel R; Lerondel G; Jeong MS
Sci Rep; 2017 Apr; 7():45726. PubMed ID: 28374856
[TBL] [Abstract][Full Text] [Related]
4. State-of-the-art and prospects for intense red radiation from core-shell InGaN/GaN nanorods.
Evropeitsev EA; Kazanov DR; Robin Y; Smirnov AN; Eliseyev IA; Davydov VY; Toropov AA; Nitta S; Shubina TV; Amano H
Sci Rep; 2020 Nov; 10(1):19048. PubMed ID: 33149244
[TBL] [Abstract][Full Text] [Related]
5. The Influence Mechanism of Quantum Well Growth and Annealing Temperature on In Migration and Stress Modulation Behavior.
Yan L; Liang F; Yang J; Chen P; Jiang D; Zhao D
Nanomaterials (Basel); 2024 Apr; 14(8):. PubMed ID: 38668197
[TBL] [Abstract][Full Text] [Related]
6. Harnessing III-Nitride Built-In Field in Multi-Quantum Well LEDs.
Chlipała M; Turski H
ACS Appl Mater Interfaces; 2024 Apr; 16(18):24021-8. PubMed ID: 38666754
[TBL] [Abstract][Full Text] [Related]
7. Optimization of AlGaN-based deep ultraviolet light emitting diodes with superlattice step doped electron blocking layers.
Zhang A; Xing Z; Qu Y; Wang F; Liou JJ; Liu Y
Opt Express; 2024 Mar; 32(6):10146-10157. PubMed ID: 38571233
[TBL] [Abstract][Full Text] [Related]
8. Impact of Plasma Electron Flux on Plasma Damage-Free Sputtering of Ultrathin Tin-Doped Indium Oxide Contact Layer on
Son KJ; Kim TK; Cha YJ; Oh SK; You SJ; Ryou JH; Kwak JS
Adv Sci (Weinh); 2018 Feb; 5(2):1700637. PubMed ID: 29619312
[TBL] [Abstract][Full Text] [Related]
9. A comparative study of efficiency droop and internal electric field for InGaN blue lighting-emitting diodes on silicon and sapphire substrates.
Ryu HY; Jeon KS; Kang MG; Yuh HK; Choi YH; Lee JS
Sci Rep; 2017 Apr; 7():44814. PubMed ID: 28401941
[TBL] [Abstract][Full Text] [Related]
10. Investigation into the Anomalous Temperature Characteristics of InGaN Double Quantum Well Blue Laser Diodes Using Numerical Simulation.
Ryu HY
Nanoscale Res Lett; 2017 Dec; 12(1):366. PubMed ID: 28532131
[TBL] [Abstract][Full Text] [Related]
11. Monolayer-Scale GaN/AlN Multiple Quantum Wells for High Power e-Beam Pumped UV-Emitters in the 240-270 nm Spectral Range.
Jmerik V; Nechaev D; Orekhova K; Prasolov N; Kozlovsky V; Sviridov D; Zverev M; Gamov N; Grieger L; Wang Y; Wang T; Wang X; Ivanov S
Nanomaterials (Basel); 2021 Sep; 11(10):. PubMed ID: 34684994
[TBL] [Abstract][Full Text] [Related]
12. InGaN/Dilute-As GaNAs Interface Quantum Well for Red Emitters.
Tan CK; Borovac D; Sun W; Tansu N
Sci Rep; 2016 Jan; 6():19271. PubMed ID: 26758552
[TBL] [Abstract][Full Text] [Related]
13. High Quality Growth of Cobalt Doped GaN Nanowires with Enhanced Ferromagnetic and Optical Response.
Maraj M; Nabi G; Usman K; Wang E; Wei W; Wang Y; Sun W
Materials (Basel); 2020 Aug; 13(16):. PubMed ID: 32796564
[TBL] [Abstract][Full Text] [Related]
14. Photo-induced Doping in GaN Epilayers with Graphene Quantum Dots.
Lin TN; Inciong MR; Santiago SR; Yeh TW; Yang WY; Yuan CT; Shen JL; Kuo HC; Chiu CH
Sci Rep; 2016 Mar; 6():23260. PubMed ID: 26987403
[TBL] [Abstract][Full Text] [Related]
15. Numerical simulation analysis of carbon defects in the buffer on vertical leakage and breakdown of GaN on silicon epitaxial layers.
Cao W; Song C; Liao H; Yang N; Wang R; Tang G; Ji H
Sci Rep; 2023 Sep; 13(1):14820. PubMed ID: 37684297
[TBL] [Abstract][Full Text] [Related]
16. Optical and Electrical Properties of Al
Wei W; Yang Y; Peng Y; Maraj M; Sun W
Molecules; 2024 Mar; 29(5):. PubMed ID: 38474664
[TBL] [Abstract][Full Text] [Related]
17. Effect of temperature on GaN-integrated optical transceiver chips.
Yan J; Fang L; Yan Y; Sun Z; Shi F; Shi Z; Wang Y
Opt Lett; 2024 Jun; 49(11):3038-3041. PubMed ID: 38824322
[TBL] [Abstract][Full Text] [Related]
18. High Efficiency Flat-Type GaN-Based Light-Emitting Diodes with Multiple Local Breakdown Conductive Channels.
Choi DC; Lee SH; Lee SN
Materials (Basel); 2024 Jun; 17(11):. PubMed ID: 38893963
[TBL] [Abstract][Full Text] [Related]
19. Study on different isolation technology on the performance of blue micro-LEDs array applications.
Lin SH; Lo YY; Hsu YH; Lin CC; Zan HW; Lin YH; Wuu DS; Hsiao CL; Horng RH
Discov Nano; 2024 Jun; 19(1):102. PubMed ID: 38869646
[TBL] [Abstract][Full Text] [Related]
20. Broadband 2.4 μm superluminescent GaInAsSb/AlGaAsSb quantum well diodes for optical sensing of biomolecules.
Wootten MB; Tan J; Chien YJ; Olesberg JT; Prineas JP
Semicond Sci Technol; 2014 Nov; 29(11):. PubMed ID: 25574065
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
