These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
125 related articles for article (PubMed ID: 29149568)
1. Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography. Tsutsui K; Matsushita T; Natori K; Muro T; Morikawa Y; Hoshii T; Kakushima K; Wakabayashi H; Hayashi K; Matsui F; Kinoshita T Nano Lett; 2017 Dec; 17(12):7533-7538. PubMed ID: 29149568 [TBL] [Abstract][Full Text] [Related]
2. Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si. Voyles PM; Muller DA; Grazul JL; Citrin PH; Gossmann HJ Nature; 2002 Apr; 416(6883):826-9. PubMed ID: 11976677 [TBL] [Abstract][Full Text] [Related]
3. Direct imaging of 3D atomic-scale dopant-defect clustering processes in ion-implanted silicon. Koelling S; Richard O; Bender H; Uematsu M; Schulze A; Zschaetzsch G; Gilbert M; Vandervorst W Nano Lett; 2013 Jun; 13(6):2458-62. PubMed ID: 23675857 [TBL] [Abstract][Full Text] [Related]
10. The geometric structure of silver-doped silicon clusters. Li Y; Lyon JT; Woodham AP; Fielicke A; Janssens E Chemphyschem; 2014 Feb; 15(2):328-36. PubMed ID: 24402827 [TBL] [Abstract][Full Text] [Related]
11. Structure, thermochemical properties, and growth sequence of aluminum-doped silicon clusters Si(n)Al(m) (n = 1-11, m = 1-2) and their anions. Tam NM; Tai TB; Ngan VT; Nguyen MT J Phys Chem A; 2013 Aug; 117(31):6867-82. PubMed ID: 23837568 [TBL] [Abstract][Full Text] [Related]
12. Simulating the thermal behavior and fragmentation mechanisms of exohedral and substitutional silicon-doped C60. Marcos PA; Alonso JA; López MJ J Chem Phys; 2005 Nov; 123(20):204323. PubMed ID: 16351272 [TBL] [Abstract][Full Text] [Related]
13. Imaging of arsenic Cottrell atmospheres around silicon defects by three-dimensional atom probe tomography. Thompson K; Flaitz PL; Ronsheim P; Larson DJ; Kelly TF Science; 2007 Sep; 317(5843):1370-4. PubMed ID: 17823348 [TBL] [Abstract][Full Text] [Related]
14. Monolayer Doping of Germanium with Arsenic: A New Chemical Route to Achieve Optimal Dopant Activation. Kennedy N; Garvey S; Maccioni B; Eaton L; Nolan M; Duffy R; Meaney F; Kennedy M; Holmes JD; Long B Langmuir; 2020 Sep; 36(34):9993-10002. PubMed ID: 32787047 [TBL] [Abstract][Full Text] [Related]
15. B-Doped δ-Layers and Nanowires from Area-Selective Deposition of BCl Dwyer KJ; Baek S; Farzaneh A; Dreyer M; Williams JR; Butera RE ACS Appl Mater Interfaces; 2021 Sep; 13(34):41275-41286. PubMed ID: 34405671 [TBL] [Abstract][Full Text] [Related]
16. Active doping of B in silicon nanostructures and development of a Si quantum dot solar cell. Hong SH; Kim YS; Lee W; Kim YH; Song JY; Jang JS; Park JH; Choi SH; Kim KJ Nanotechnology; 2011 Oct; 22(42):425203. PubMed ID: 21941033 [TBL] [Abstract][Full Text] [Related]
17. Characterization of impurity doping and stress in Si/Ge and Ge/Si core-shell nanowires. Fukata N; Mitome M; Sekiguchi T; Bando Y; Kirkham M; Hong JI; Wang ZL; Snyder RL ACS Nano; 2012 Oct; 6(10):8887-95. PubMed ID: 22947081 [TBL] [Abstract][Full Text] [Related]
18. Interpretation of phase images of delta-doped layers. Cooper D; Dunin-Borkowski RE Microscopy (Oxf); 2013 Jun; 62 Suppl 1():S87-98. PubMed ID: 23536698 [TBL] [Abstract][Full Text] [Related]
19. Limits in detecting an individual dopant atom embedded in a crystal. Mittal A; Mkhoyan KA Ultramicroscopy; 2011 Jul; 111(8):1101-10. PubMed ID: 21741341 [TBL] [Abstract][Full Text] [Related]
20. Doping and Raman characterization of boron and phosphorus atoms in germanium nanowires. Fukata N; Sato K; Mitome M; Bando Y; Sekiguchi T; Kirkham M; Hong JI; Wang ZL; Snyder RL ACS Nano; 2010 Jul; 4(7):3807-16. PubMed ID: 20565120 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]