These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
297 related articles for article (PubMed ID: 29160064)
1. Effect of Polarization Reversal in Ferroelectric TiN/Hf Matveyev Y; Negrov D; Chernikova A; Lebedinskii Y; Kirtaev R; Zarubin S; Suvorova E; Gloskovskii A; Zenkevich A ACS Appl Mater Interfaces; 2017 Dec; 9(49):43370-43376. PubMed ID: 29160064 [TBL] [Abstract][Full Text] [Related]
2. Reduced fatigue and leakage of ferroelectric TiN/Hf Hsain HA; Lee Y; Lancaster S; Lomenzo PD; Xu B; Mikolajick T; Schroeder U; Parsons GN; Jones JL Nanotechnology; 2023 Jan; 34(12):. PubMed ID: 36538824 [TBL] [Abstract][Full Text] [Related]
3. Effect of ferroelectric and interface films on the tunneling electroresistance of the Al Shekhawat A; Hsain HA; Lee Y; Jones JL; Moghaddam S Nanotechnology; 2021 Sep; 32(48):. PubMed ID: 34407525 [TBL] [Abstract][Full Text] [Related]
4. Magnetoelectric Coupling at the Ni/Hf Dmitriyeva A; Mikheev V; Zarubin S; Chouprik A; Vinai G; Polewczyk V; Torelli P; Matveyev Y; Schlueter C; Karateev I; Yang Q; Chen Z; Tao L; Tsymbal EY; Zenkevich A ACS Nano; 2021 Sep; 15(9):14891-14902. PubMed ID: 34468129 [TBL] [Abstract][Full Text] [Related]
6. Effect of Domain Structure and Dielectric Interlayer on Switching Speed of Ferroelectric Hf Chouprik A; Savelyeva E; Korostylev E; Kondratyuk E; Zarubin S; Sizykh N; Zhuk M; Zenkevich A; Markeev AM; Kondratev O; Yakunin S Nanomaterials (Basel); 2023 Dec; 13(23):. PubMed ID: 38063759 [TBL] [Abstract][Full Text] [Related]
7. Interface-engineered ferroelectricity of epitaxial Hf Shi S; Xi H; Cao T; Lin W; Liu Z; Niu J; Lan D; Zhou C; Cao J; Su H; Zhao T; Yang P; Zhu Y; Yan X; Tsymbal EY; Tian H; Chen J Nat Commun; 2023 Mar; 14(1):1780. PubMed ID: 36997572 [TBL] [Abstract][Full Text] [Related]
8. Improved Ferroelectric Properties in Hf Zhao B; Yan Y; Bi J; Xu G; Xu Y; Yang X; Fan L; Liu M Nanomaterials (Basel); 2022 Aug; 12(17):. PubMed ID: 36080036 [TBL] [Abstract][Full Text] [Related]
9. Enhanced Switching Reliability of Hf Huang F; Saini B; Yu Z; Yoo C; Thampy V; He X; Baniecki JD; Tsai W; Meng AC; McIntyre PC; Wong S ACS Appl Mater Interfaces; 2023 Nov; 15(43):50246-50253. PubMed ID: 37856882 [TBL] [Abstract][Full Text] [Related]
10. Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO Koroleva AA; Chernikova AG; Zarubin SS; Korostylev E; Khakimov RR; Zhuk MY; Markeev AM ACS Omega; 2022 Dec; 7(50):47084-47095. PubMed ID: 36570284 [TBL] [Abstract][Full Text] [Related]
11. Ultralow Subthreshold Swing of a MOSFET Caused by Ferroelectric Polarization Reversal of Hf Wang Y; Liu S; Luo Z; Gan H; Wang H; Li J; Du X; Zhao H; Shen S; Yin Y; Li X ACS Appl Mater Interfaces; 2023 Sep; 15(36):42764-42773. PubMed ID: 37655492 [TBL] [Abstract][Full Text] [Related]
12. Nanoscale Doping and Its Impact on the Ferroelectric and Piezoelectric Properties of Hf Chouprik A; Kirtaev R; Korostylev E; Mikheev V; Spiridonov M; Negrov D Nanomaterials (Basel); 2022 Apr; 12(9):. PubMed ID: 35564195 [TBL] [Abstract][Full Text] [Related]
13. Electrically induced cancellation and inversion of piezoelectricity in ferroelectric Hf Lu H; Kim DJ; Aramberri H; Holzer M; Buragohain P; Dutta S; Schroeder U; Deshpande V; Íñiguez J; Gruverman A; Dubourdieu C Nat Commun; 2024 Jan; 15(1):860. PubMed ID: 38287021 [TBL] [Abstract][Full Text] [Related]
14. High-Speed Switching and Giant Electroresistance in an Epitaxial Hf Du X; Sun H; Wang H; Li J; Yin Y; Li X ACS Appl Mater Interfaces; 2022 Jan; 14(1):1355-1361. PubMed ID: 34958206 [TBL] [Abstract][Full Text] [Related]
15. Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia-Zirconia Thin Films. Hsain HA; Lee Y; Lancaster S; Materano M; Alcala R; Xu B; Mikolajick T; Schroeder U; Parsons GN; Jones JL ACS Appl Mater Interfaces; 2022 Sep; 14(37):42232-42244. PubMed ID: 36069477 [TBL] [Abstract][Full Text] [Related]
16. Effect of a ZrO Song JN; Oh MJ; Yoon CB Materials (Basel); 2023 Feb; 16(5):. PubMed ID: 36903074 [TBL] [Abstract][Full Text] [Related]
18. Superhigh energy storage density on-chip capacitors with ferroelectric Hf He Y; Zheng G; Wu X; Liu WJ; Zhang DW; Ding SJ Nanoscale Adv; 2022 Oct; 4(21):4648-4657. PubMed ID: 36341289 [TBL] [Abstract][Full Text] [Related]
19. Reversible fatigue-rejuvenation procedure and its mechanism in Hf Liu Z; Zhong H; Xie D; He M; Wang C; Lyu H; Yang G; Jin K; Ge C J Phys Condens Matter; 2023 Mar; 35(20):. PubMed ID: 36881920 [TBL] [Abstract][Full Text] [Related]
20. Remote Oxygen Scavenging of the Interfacial Oxide Layer in Ferroelectric Hafnium-Zirconium Oxide-Based Metal-Oxide-Semiconductor Structures. Tasneem N; Kashyap H; Chae K; Park C; Lee PC; Lombardo SF; Afroze N; Tian M; Kumarasubramanian H; Hur J; Chen H; Chern W; Yu S; Bandaru P; Ravichandran J; Cho K; Kacher J; Kummel AC; Khan AI ACS Appl Mater Interfaces; 2022 Sep; 14(38):43897-43906. PubMed ID: 36121320 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]