These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
138 related articles for article (PubMed ID: 29171260)
1. Engineering the Photoresponse of InAs Nanowires. Alexander-Webber JA; Groschner CK; Sagade AA; Tainter G; Gonzalez-Zalba MF; Di Pietro R; Wong-Leung J; Tan HH; Jagadish C; Hofmann S; Joyce HJ ACS Appl Mater Interfaces; 2017 Dec; 9(50):43993-44000. PubMed ID: 29171260 [TBL] [Abstract][Full Text] [Related]
2. Switching from Negative to Positive Photoconductivity toward Intrinsic Photoelectric Response in InAs Nanowire. Han Y; Fu M; Tang Z; Zheng X; Ji X; Wang X; Lin W; Yang T; Chen Q ACS Appl Mater Interfaces; 2017 Jan; 9(3):2867-2874. PubMed ID: 28049290 [TBL] [Abstract][Full Text] [Related]
3. Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory. Yang Y; Peng X; Kim HS; Kim T; Jeon S; Kang HK; Choi W; Song J; Doh YJ; Yu D Nano Lett; 2015 Sep; 15(9):5875-82. PubMed ID: 26226506 [TBL] [Abstract][Full Text] [Related]
4. Competition of Photo-Excitation and Photo-Desorption Induced Positive and Negative Photoconductivity Switch in Te Nanowires. Yin Y; Ling J; Wang L; Zhou W; Peng Y; Zhou Y; Tang D Nanomaterials (Basel); 2022 Oct; 12(21):. PubMed ID: 36364522 [TBL] [Abstract][Full Text] [Related]
5. Photoconductivity Switching in MoTe Kim HJ; Lee KJ; Park J; Shin GH; Park H; Yu K; Choi SY ACS Appl Mater Interfaces; 2020 Aug; 12(34):38563-38569. PubMed ID: 32846468 [TBL] [Abstract][Full Text] [Related]
6. Trap Passivation in Indium-Based Quantum Dots through Surface Fluorination: Mechanism and Applications. Kim TG; Zherebetskyy D; Bekenstein Y; Oh MH; Wang LW; Jang E; Alivisatos AP ACS Nano; 2018 Nov; 12(11):11529-11540. PubMed ID: 30335943 [TBL] [Abstract][Full Text] [Related]
7. Recent progress on infrared photodetectors based on InAs and InAsSb nanowires. Xu T; Wang H; Chen X; Luo M; Zhang L; Wang Y; Chen F; Shan C; Yu C Nanotechnology; 2020 May; 31(29):294004. PubMed ID: 32235081 [TBL] [Abstract][Full Text] [Related]
8. Ultrasensitive negative photoresponse in 2D Cr Xie L; Guo L; Yu W; Kang T; Zheng RK; Zhang K Nanotechnology; 2018 Nov; 29(46):464002. PubMed ID: 30179161 [TBL] [Abstract][Full Text] [Related]
9. InAs-Nanowire-Based Broadband Ultrafast Optical Switch. Liu J; Khayrudinov V; Yang H; Sun Y; Matveev B; Remennyi M; Yang K; Haggren T; Lipsanen H; Wang F; Zhang B; He J J Phys Chem Lett; 2019 Aug; 10(15):4429-4436. PubMed ID: 31317748 [TBL] [Abstract][Full Text] [Related]
10. High-Performance Room-Temperature UV-IR Photodetector Based on the InAs Nanosheet and Its Wavelength- and Intensity-Dependent Negative Photoconductivity. Wang X; Pan D; Sun M; Lyu F; Zhao J; Chen Q ACS Appl Mater Interfaces; 2021 Jun; 13(22):26187-26195. PubMed ID: 34032402 [TBL] [Abstract][Full Text] [Related]
11. Wet-chemical passivation of InAs: toward surfaces with high stability and low toxicity. Jewett SA; Ivanisevic A Acc Chem Res; 2012 Sep; 45(9):1451-9. PubMed ID: 22716947 [TBL] [Abstract][Full Text] [Related]
12. In Situ Growth of GeS Nanowires with Sulfur-Rich Shell for Featured Negative Photoconductivity. Zhao S; Sun J; Yin Y; Guo Y; Liu D; Miao C; Feng X; Wang Y; Xu M; Yang ZX J Phys Chem Lett; 2021 Apr; 12(12):3046-3052. PubMed ID: 33739121 [TBL] [Abstract][Full Text] [Related]
13. In situ passivation of GaAsSb nanowires for enhanced infrared photoresponse. Li Z; Yuan X; Gao Q; Yang I; Li L; Caroff P; Allen M; Allen J; Tan HH; Jagadish C; Fu L Nanotechnology; 2020 Mar; 31(24):244002. PubMed ID: 32131061 [TBL] [Abstract][Full Text] [Related]
14. Controlled van der Waals heteroepitaxy of InAs nanowires on carbon honeycomb lattices. Hong YJ; Fukui T ACS Nano; 2011 Sep; 5(9):7576-84. PubMed ID: 21838312 [TBL] [Abstract][Full Text] [Related]
15. Surface roughness induced electron mobility degradation in InAs nanowires. Wang F; Yip S; Han N; Fok K; Lin H; Hou JJ; Dong G; Hung T; Chan KS; Ho JC Nanotechnology; 2013 Sep; 24(37):375202. PubMed ID: 23965340 [TBL] [Abstract][Full Text] [Related]
16. Modulating Electrical Properties of InAs Nanowires via Molecular Monolayers. Cheung HY; Yip S; Han N; Dong G; Fang M; Yang ZX; Wang F; Lin H; Wong CY; Ho JC ACS Nano; 2015 Jul; 9(7):7545-52. PubMed ID: 26083845 [TBL] [Abstract][Full Text] [Related]
18. Robust Epitaxial Al Coating of Reclined InAs Nanowires. Kang JH; Grivnin A; Bor E; Reiner J; Avraham N; Ronen Y; Cohen Y; Kacman P; Shtrikman H; Beidenkopf H Nano Lett; 2017 Dec; 17(12):7520-7527. PubMed ID: 29115842 [TBL] [Abstract][Full Text] [Related]
19. Single Si nanowire (diameter ≤ 100 nm) based polarization sensitive near-infrared photodetector with ultra-high responsivity. Das K; Mukherjee S; Manna S; Ray SK; Raychaudhuri AK Nanoscale; 2014 Oct; 6(19):11232-9. PubMed ID: 25126742 [TBL] [Abstract][Full Text] [Related]
20. Ten-Fold Enhancement of InAs Nanowire Photoluminescence Emission with an InP Passivation Layer. Jurczak P; Zhang Y; Wu J; Sanchez AM; Aagesen M; Liu H Nano Lett; 2017 Jun; 17(6):3629-3633. PubMed ID: 28535064 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]