These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
24. Tuning the Surface Morphologies and Properties of ZnO Films by the Design of Interfacial Layer. Li Y; Wang HQ; Zhou H; Du D; Geng W; Lin D; Chen X; Zhan H; Zhou Y; Kang J Nanoscale Res Lett; 2017 Sep; 12(1):551. PubMed ID: 28952132 [TBL] [Abstract][Full Text] [Related]
25. Band offsets and photocurrent spectroscopy of Si/Ge heterostructures with quantum dots. Kondratenko SV; Nikolenko AS; Vakulenko OV; Valakh MY; Yukhymchuk VO; Dvurechenskii AV; Nikiforov AI Nanotechnology; 2008 Apr; 19(14):145703. PubMed ID: 21817769 [TBL] [Abstract][Full Text] [Related]
26. In situ Control of Si/Ge Growth on Stripe-Patterned Substrates Using Reflection High-Energy Electron Diffraction and Scanning Tunneling Microscopy. Sanduijav B; Matei DG; Springholz G Nanoscale Res Lett; 2010 Oct; 5(12):1935-41. PubMed ID: 21170141 [TBL] [Abstract][Full Text] [Related]
27. Material gain engineering in GeSn/Ge quantum wells integrated with an Si platform. Mączko HS; Kudrawiec R; Gladysiewicz M Sci Rep; 2016 Sep; 6():34082. PubMed ID: 27686056 [TBL] [Abstract][Full Text] [Related]
28. Epitaxial Fe3Si films on GaAs(100) substrates by means of electron beam evaporation. Thomas J; Schumann J; Vinzelberg H; Arushanov E; Engelhard R; Schmidt OG; Gemming T Nanotechnology; 2009 Jun; 20(23):235604. PubMed ID: 19451681 [TBL] [Abstract][Full Text] [Related]
31. Scanning tunneling microscopy study of thin PTCDI films on Ag/Si(111)-√3 × √3. Emanuelsson C; Zhang HM; Moons E; Johansson LS J Chem Phys; 2017 Mar; 146(11):114702. PubMed ID: 28330354 [TBL] [Abstract][Full Text] [Related]
32. Characterization of the microstructure of GaP films grown on {111} Si by liquid phase epitaxy. Huang SR; Lu X; Barnett A; Opila RL; Mogili V; Tanner DA; Nakahara S ACS Appl Mater Interfaces; 2014 Nov; 6(21):18626-34. PubMed ID: 25300064 [TBL] [Abstract][Full Text] [Related]
33. An investigation of the electrical and optical properties of thin iron layers grown on the epitaxial Si(111)-(2 × 2)-Fe phase and on an Si(111)7 × 7 surface. Goroshko DL; Galkin NG; Fomin DV; Gouralnik AS; Vavanova SV J Phys Condens Matter; 2009 Oct; 21(43):435801. PubMed ID: 21832445 [TBL] [Abstract][Full Text] [Related]
34. Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots. Talochkin AB; Cherkov AG Nanotechnology; 2009 Aug; 20(34):345702. PubMed ID: 19652280 [TBL] [Abstract][Full Text] [Related]
35. Germanene Epitaxial Growth by Segregation through Ag(111) Thin Films on Ge(111). Yuhara J; Shimazu H; Ito K; Ohta A; Araidai M; Kurosawa M; Nakatake M; Le Lay G ACS Nano; 2018 Nov; 12(11):11632-11637. PubMed ID: 30371060 [TBL] [Abstract][Full Text] [Related]
36. Quantum-confined direct band transitions in tensile strained Ge/SiGe quantum wells on silicon substrates. Chen Y; Li C; Lai H; Chen S Nanotechnology; 2010 Mar; 21(11):115207. PubMed ID: 20179329 [TBL] [Abstract][Full Text] [Related]
37. Effects of thermal annealing in oxygen plasma for buffer layers on properties of ZnO thin films. Kim GS; Kim MS; Choi HY; Cho MY; Yim KG; Leem JY J Nanosci Nanotechnol; 2011 Oct; 11(10):8859-63. PubMed ID: 22400272 [TBL] [Abstract][Full Text] [Related]
38. Impact of annealing on surface morphology and photoluminescence of self-assembled Ge and Si quantum dots. Samavati A; Othaman Z; Dabagh S; Ghoshal SK J Nanosci Nanotechnol; 2014 Jul; 14(7):5266-71. PubMed ID: 24758014 [TBL] [Abstract][Full Text] [Related]
39. Study of the fundamental units of novel semiconductor materials: structures, energetics, and thermodynamics of the Ge-Sn and Si-Ge-Sn molecular systems. Ciccioli A; Gigli G J Phys Chem A; 2012 Jul; 116(26):7107-22. PubMed ID: 22642219 [TBL] [Abstract][Full Text] [Related]