517 related articles for article (PubMed ID: 29360349)
1. Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors.
Lin YC; Jariwala B; Bersch BM; Xu K; Nie Y; Wang B; Eichfeld SM; Zhang X; Choudhury TH; Pan Y; Addou R; Smyth CM; Li J; Zhang K; Haque MA; Fölsch S; Feenstra RM; Wallace RM; Cho K; Fullerton-Shirey SK; Redwing JM; Robinson JA
ACS Nano; 2018 Feb; 12(2):965-975. PubMed ID: 29360349
[TBL] [Abstract][Full Text] [Related]
2. Highly scalable, atomically thin WSe2 grown via metal-organic chemical vapor deposition.
Eichfeld SM; Hossain L; Lin YC; Piasecki AF; Kupp B; Birdwell AG; Burke RA; Lu N; Peng X; Li J; Azcatl A; McDonnell S; Wallace RM; Kim MJ; Mayer TS; Redwing JM; Robinson JA
ACS Nano; 2015 Feb; 9(2):2080-7. PubMed ID: 25625184
[TBL] [Abstract][Full Text] [Related]
3. Tungsten Oxide Mediated Quasi-van der Waals Epitaxy of WS
Cohen A; Mohapatra PK; Hettler S; Patsha A; Narayanachari KVLV; Shekhter P; Cavin J; Rondinelli JM; Bedzyk M; Dieguez O; Arenal R; Ismach A
ACS Nano; 2023 Mar; 17(6):5399-5411. PubMed ID: 36883970
[TBL] [Abstract][Full Text] [Related]
4. Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors.
Chuang HJ; Chamlagain B; Koehler M; Perera MM; Yan J; Mandrus D; Tománek D; Zhou Z
Nano Lett; 2016 Mar; 16(3):1896-902. PubMed ID: 26844954
[TBL] [Abstract][Full Text] [Related]
5. Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenides.
Zhang K; Jariwala B; Li J; Briggs NC; Wang B; Ruzmetov D; Burke RA; Lerach JO; Ivanov TG; Haque M; Feenstra RM; Robinson JA
Nanoscale; 2017 Dec; 10(1):336-341. PubMed ID: 29215125
[TBL] [Abstract][Full Text] [Related]
6. High-Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions.
Liu B; Ma Y; Zhang A; Chen L; Abbas AN; Liu Y; Shen C; Wan H; Zhou C
ACS Nano; 2016 May; 10(5):5153-60. PubMed ID: 27159780
[TBL] [Abstract][Full Text] [Related]
7. Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects.
Schmidt H; Giustiniano F; Eda G
Chem Soc Rev; 2015 Nov; 44(21):7715-36. PubMed ID: 26088725
[TBL] [Abstract][Full Text] [Related]
8. Anti-Ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides.
Li Y; Wang Y; Huang L; Wang X; Li X; Deng HX; Wei Z; Li J
ACS Appl Mater Interfaces; 2016 Jun; 8(24):15574-81. PubMed ID: 27258569
[TBL] [Abstract][Full Text] [Related]
9. Reversible Semiconducting-to-Metallic Phase Transition in Chemical Vapor Deposition Grown Monolayer WSe2 and Applications for Devices.
Ma Y; Liu B; Zhang A; Chen L; Fathi M; Shen C; Abbas AN; Ge M; Mecklenburg M; Zhou C
ACS Nano; 2015 Jul; 9(7):7383-91. PubMed ID: 26125321
[TBL] [Abstract][Full Text] [Related]
10. Layer-by-Layer Epitaxial Growth of Scalable WSe
Nakano M; Wang Y; Kashiwabara Y; Matsuoka H; Iwasa Y
Nano Lett; 2017 Sep; 17(9):5595-5599. PubMed ID: 28849935
[TBL] [Abstract][Full Text] [Related]
11. Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors.
Wang Y; Kim JC; Wu RJ; Martinez J; Song X; Yang J; Zhao F; Mkhoyan A; Jeong HY; Chhowalla M
Nature; 2019 Apr; 568(7750):70-74. PubMed ID: 30918403
[TBL] [Abstract][Full Text] [Related]
12. Van der Waals epitaxial growth and optoelectronics of a vertical MoS
Xiao Y; Qu J; Luo Z; Chen Y; Yang X; Zhang D; Li H; Zheng B; Yi J; Wu R; You W; Liu B; Chen S; Pan A
Front Optoelectron; 2022 Oct; 15(1):41. PubMed ID: 36637698
[TBL] [Abstract][Full Text] [Related]
13. van der Waals Epitaxy of High-Mobility Polymorphic Structure of Mo
Lee RS; Kim D; Pawar SA; Kim T; Shin JC; Kang SW
ACS Nano; 2019 Jan; 13(1):642-648. PubMed ID: 30609346
[TBL] [Abstract][Full Text] [Related]
14. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity.
Kang K; Xie S; Huang L; Han Y; Huang PY; Mak KF; Kim CJ; Muller D; Park J
Nature; 2015 Apr; 520(7549):656-60. PubMed ID: 25925478
[TBL] [Abstract][Full Text] [Related]
15. Large-area single-crystal TMD growth modulated by sapphire substrates.
Chen L; Cheng Z; He S; Zhang X; Deng K; Zong D; Wu Z; Xia M
Nanoscale; 2024 Jan; 16(3):978-1004. PubMed ID: 38112240
[TBL] [Abstract][Full Text] [Related]
16. Chemically Tuned p- and n-Type WSe
Ji HG; Solís-Fernández P; Yoshimura D; Maruyama M; Endo T; Miyata Y; Okada S; Ago H
Adv Mater; 2019 Oct; 31(42):e1903613. PubMed ID: 31475400
[TBL] [Abstract][Full Text] [Related]
17. Scalable Substitutional Re-Doping and its Impact on the Optical and Electronic Properties of Tungsten Diselenide.
Kozhakhmetov A; Schuler B; Tan AMZ; Cochrane KA; Nasr JR; El-Sherif H; Bansal A; Vera A; Bojan V; Redwing JM; Bassim N; Das S; Hennig RG; Weber-Bargioni A; Robinson JA
Adv Mater; 2020 Dec; 32(50):e2005159. PubMed ID: 33169451
[TBL] [Abstract][Full Text] [Related]
18. Step-Edge-Guided Nucleation and Growth of Aligned WSe2 on Sapphire via a Layer-over-Layer Growth Mode.
Chen L; Liu B; Ge M; Ma Y; Abbas AN; Zhou C
ACS Nano; 2015 Aug; 9(8):8368-75. PubMed ID: 26221865
[TBL] [Abstract][Full Text] [Related]
19. One-Step Synthesis of NbSe
Vu VT; Vu TTH; Phan TL; Kang WT; Kim YR; Tran MD; Nguyen HTT; Lee YH; Yu WJ
ACS Nano; 2021 Aug; 15(8):13031-13040. PubMed ID: 34350752
[TBL] [Abstract][Full Text] [Related]
20. Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures.
Lin YC; Li J; de la Barrera SC; Eichfeld SM; Nie Y; Addou R; Mende PC; Wallace RM; Cho K; Feenstra RM; Robinson JA
Nanoscale; 2016 Apr; 8(16):8947-54. PubMed ID: 27073972
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
