These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
11. Atomic structure of 'W'-type quantum well heterostructures investigated by aberration-corrected STEM. Kükelhan P; Beyer A; Fuchs C; Weseloh MJ; Koch SW; Stolz W; Volz K J Microsc; 2017 Dec; 268(3):259-268. PubMed ID: 28960298 [TBL] [Abstract][Full Text] [Related]
12. Heat-sink free CW operation of injection microdisk lasers grown on Si substrate with emission wavelength beyond 1.3 μm. Kryzhanovskaya N; Moiseev E; Polubavkina Y; Maximov M; Kulagina M; Troshkov S; Zadiranov Y; Guseva Y; Lipovskii A; Tang M; Liao M; Wu J; Chen S; Liu H; Zhukov A Opt Lett; 2017 Sep; 42(17):3319-3322. PubMed ID: 28957093 [TBL] [Abstract][Full Text] [Related]
13. Ultra-high thermal stability InAs/GaAs quantum dot lasers grown on on-axis Si (001) with a record-high continuous-wave operating temperature of 150 °C. Lv Z; Wang S; Wang S; Chai H; Meng L; Yang X; Yang T Opt Express; 2023 Jul; 31(15):24173-24182. PubMed ID: 37475250 [TBL] [Abstract][Full Text] [Related]
14. High-power temperature-stable GaInNAs distributed Bragg reflector laser emitting at 1180 nm. Korpijärvi VM; Viheriälä J; Koskinen M; Aho AT; Guina M Opt Lett; 2016 Feb; 41(4):657-60. PubMed ID: 26872156 [TBL] [Abstract][Full Text] [Related]
15. Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact. Yonkee BP; Young EC; Lee C; Leonard JT; DenBaars SP; Speck JS; Nakamura S Opt Express; 2016 Apr; 24(7):7816-22. PubMed ID: 27137064 [TBL] [Abstract][Full Text] [Related]
16. High power CW (16W) and pulse (145W) laser diodes based on quantum well heterostructures. Tarasov IS; Pikhtin NA; Slipchenko SO; Sokolova ZN; Vinokurov DA; Borschev KS; Kapitonov VA; Khomylev MA; Leshko AY; Lyutetskiy AV; Stankevich AL Spectrochim Acta A Mol Biomol Spectrosc; 2007 Apr; 66(4-5):819-23. PubMed ID: 17270490 [TBL] [Abstract][Full Text] [Related]
17. Electrically pumped continuous-wave 1.3 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates. Chen S; Liao M; Tang M; Wu J; Martin M; Baron T; Seeds A; Liu H Opt Express; 2017 Mar; 25(5):4632-4639. PubMed ID: 28380734 [TBL] [Abstract][Full Text] [Related]
18. GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique. Patil PK; Luna E; Matsuda T; Yamada K; Kamiya K; Ishikawa F; Shimomura S Nanotechnology; 2017 Mar; 28(10):105702. PubMed ID: 28145284 [TBL] [Abstract][Full Text] [Related]
19. High slope-efficiency quantum-dot lasers grown on planar exact silicon (001) with asymmetric waveguide structures. Wang J; Liu Z; Liu H; Bai Y; Ma B; Xiao C; Jiang C; Li J; Wang H; Jia Y; Liu K; Yang Y; Wang Q; Huang Y; Ren X Opt Express; 2022 Mar; 30(7):11563-11571. PubMed ID: 35473098 [TBL] [Abstract][Full Text] [Related]
20. High performance distributed feedback quantum cascade laser emitting at λ∼6.12um. Cheng F; Zhang J; Sun Y; Zhuo N; Zhai S; Liu J; Wang L; Liu S; Liu F Opt Express; 2022 Feb; 30(4):5848-5854. PubMed ID: 35209538 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]