401 related articles for article (PubMed ID: 29363947)
1. Probing the Mechanism for Bipolar Resistive Switching in Annealed Graphene Oxide Thin Films.
Saini P; Singh M; Thakur J; Patil R; Ma YR; Tandon RP; Singh SP; Mahapatro AK
ACS Appl Mater Interfaces; 2018 Feb; 10(7):6521-6530. PubMed ID: 29363947
[TBL] [Abstract][Full Text] [Related]
2. Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method.
Chen KH; Kao MC; Huang SJ; Li JZ
Materials (Basel); 2017 Dec; 10(12):. PubMed ID: 29231867
[TBL] [Abstract][Full Text] [Related]
3. Valence Change Bipolar Resistive Switching Accompanied With Magnetization Switching in CoFe
Munjal S; Khare N
Sci Rep; 2017 Sep; 7(1):12427. PubMed ID: 28963521
[TBL] [Abstract][Full Text] [Related]
4. Temperature dependence of resistive switching behaviors in resistive random access memory based on graphene oxide film.
Yi M; Cao Y; Ling H; Du Z; Wang L; Yang T; Fan Q; Xie L; Huang W
Nanotechnology; 2014 May; 25(18):185202. PubMed ID: 24739543
[TBL] [Abstract][Full Text] [Related]
5. Resistive switching behavior in gelatin thin films for nonvolatile memory application.
Chang YC; Wang YH
ACS Appl Mater Interfaces; 2014 Apr; 6(8):5413-21. PubMed ID: 24679989
[TBL] [Abstract][Full Text] [Related]
6. Effects of Electrodes on the Switching Behavior of Strontium Titanate Nickelate Resistive Random Access Memory.
Lee KJ; Wang LW; Chiang TK; Wang YH
Materials (Basel); 2015 Oct; 8(10):7191-7198. PubMed ID: 28793630
[TBL] [Abstract][Full Text] [Related]
7. Influences of electrode materials on the resistive memory switching properties of ZnOxS1-x:Mn thin films.
Han Y; Chung I; Park S; Cho K; Kim S
J Nanosci Nanotechnol; 2013 Sep; 13(9):6208-11. PubMed ID: 24205630
[TBL] [Abstract][Full Text] [Related]
8. Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode.
Chen KH; Chang KC; Chang TC; Tsai TM; Liang SP; Young TF; Syu YE; Sze SM
Nanoscale Res Lett; 2016 Dec; 11(1):224. PubMed ID: 27117634
[TBL] [Abstract][Full Text] [Related]
9. Point contact resistive switching memory based on self-formed interface of Al/ITO.
Li Q; Qiu L; Wei X; Dai B; Zeng H
Sci Rep; 2016 Jul; 6():29347. PubMed ID: 27383005
[TBL] [Abstract][Full Text] [Related]
10. Effect of oxidizable electrode material on resistive switching characteristics of ZnO(x)S(1-x) films.
Cho K; Park S; Chung I; Kim S
J Nanosci Nanotechnol; 2014 Nov; 14(11):8187-90. PubMed ID: 25958497
[TBL] [Abstract][Full Text] [Related]
11. Impact of Top Electrodes on the Nonvolatile Resistive Switching Properties of Citrus Thin Films.
Lin KW; Wang TY; Chang YC
Polymers (Basel); 2021 Feb; 13(5):. PubMed ID: 33652819
[TBL] [Abstract][Full Text] [Related]
12. Reversible voltage dependent transition of abnormal and normal bipolar resistive switching.
Wang G; Li C; Chen Y; Xia Y; Wu D; Xu Q
Sci Rep; 2016 Nov; 6():36953. PubMed ID: 27841318
[TBL] [Abstract][Full Text] [Related]
13. Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory.
Zhao X; Song P; Gai H; Li Y; Ai C; Wen D
Micromachines (Basel); 2020 Sep; 11(10):. PubMed ID: 32987957
[TBL] [Abstract][Full Text] [Related]
14. Bipolar resistive switching behavior of an amorphous Ge₂Sb₂Te₅ thin films with a Te layer.
Yoo S; Eom T; Gwon T; Hwang CS
Nanoscale; 2015 Apr; 7(14):6340-7. PubMed ID: 25785363
[TBL] [Abstract][Full Text] [Related]
15. Abnormal coexistence of unipolar, bipolar, and threshold resistive switching in an Al/NiO/ITO structure.
Yuan XC; Tang JL; Zeng HZ; Wei XH
Nanoscale Res Lett; 2014; 9(1):268. PubMed ID: 24940181
[TBL] [Abstract][Full Text] [Related]
16. Observation of nonvolatile resistive memory switching characteristics in Ag/graphene-oxide/Ag devices.
Venugopal G; Kim SJ
J Nanosci Nanotechnol; 2012 Nov; 12(11):8522-5. PubMed ID: 23421239
[TBL] [Abstract][Full Text] [Related]
17. Devices with Tuneable Resistance Switching Characteristics Based on a Multilayer Structure of Graphene Oxide and Egg Albumen.
Wang L; Wang J; Wen D
Nanomaterials (Basel); 2020 Jul; 10(8):. PubMed ID: 32751364
[TBL] [Abstract][Full Text] [Related]
18. Bipolar resistive switching in HoCrO
Sahu DP; Jammalamadaka SN
Nanotechnology; 2020 Aug; 31(35):355202. PubMed ID: 32408284
[TBL] [Abstract][Full Text] [Related]
19. Excellent Bipolar Resistive Switching Characteristics of Bi
Zhou HC; Jiang YP; Tang XG; Liu QX; Li WH; Tang ZH
Nanomaterials (Basel); 2021 Oct; 11(10):. PubMed ID: 34685146
[TBL] [Abstract][Full Text] [Related]
20. Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid.
Oh SI; Rani JR; Hong SM; Jang JH
Nanoscale; 2017 Oct; 9(40):15314-15322. PubMed ID: 28820212
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
