These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

169 related articles for article (PubMed ID: 29381069)

  • 1. In Situ Infrared Absorption Study of Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride.
    Peña LF; Mattson EC; Nanayakkara CE; Oyekan KA; Mallikarjunan A; Chandra H; Xiao M; Lei X; Pearlstein RM; Derecskei-Kovacs A; Chabal YJ
    Langmuir; 2018 Feb; 34(8):2619-2629. PubMed ID: 29381069
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Novel Cyclosilazane-Type Silicon Precursor and Two-Step Plasma for Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride.
    Park JM; Jang SJ; Lee SI; Lee WJ
    ACS Appl Mater Interfaces; 2018 Mar; 10(10):9155-9163. PubMed ID: 29461032
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Surface etching, chemical modification and characterization of silicon nitride and silicon oxide--selective functionalization of Si3N4 and SiO2.
    Liu LH; Michalak DJ; Chopra TP; Pujari SP; Cabrera W; Dick D; Veyan JF; Hourani R; Halls MD; Zuilhof H; Chabal YJ
    J Phys Condens Matter; 2016 Mar; 28(9):094014. PubMed ID: 26870908
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Hollow Cathode Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using Pentachlorodisilane.
    Meng X; Kim HS; Lucero AT; Hwang SM; Lee JS; Byun YC; Kim J; Hwang BK; Zhou X; Young J; Telgenhoff M
    ACS Appl Mater Interfaces; 2018 Apr; 10(16):14116-14123. PubMed ID: 29551067
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N
    Faraz T; van Drunen M; Knoops HC; Mallikarjunan A; Buchanan I; Hausmann DM; Henri J; Kessels WM
    ACS Appl Mater Interfaces; 2017 Jan; 9(2):1858-1869. PubMed ID: 28059494
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor.
    Park JM; Jang SJ; Yusup LL; Lee WJ; Lee SI
    ACS Appl Mater Interfaces; 2016 Aug; 8(32):20865-71. PubMed ID: 27447839
    [TBL] [Abstract][Full Text] [Related]  

  • 7. A Three-Step Atomic Layer Deposition Process for SiN
    Ovanesyan RA; Hausmann DM; Agarwal S
    ACS Appl Mater Interfaces; 2018 Jun; 10(22):19153-19161. PubMed ID: 29750496
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Mechanisms and energetics of hydride dissociation reactions on surfaces of plasma-deposited silicon thin films.
    Singh T; Valipa MS; Mountziaris TJ; Maroudas D
    J Chem Phys; 2007 Nov; 127(19):194703. PubMed ID: 18035894
    [TBL] [Abstract][Full Text] [Related]  

  • 9. What a difference a bond makes: the structural, chemical, and physical properties of methyl-terminated Si(111) surfaces.
    Wong KT; Lewis NS
    Acc Chem Res; 2014 Oct; 47(10):3037-44. PubMed ID: 25192516
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper.
    Kim HS; Meng X; Kim SJ; Lucero AT; Cheng L; Byun YC; Lee JS; Hwang SM; Kondusamy ALN; Wallace RM; Goodman G; Wan AS; Telgenhoff M; Hwang BK; Kim J
    ACS Appl Mater Interfaces; 2018 Dec; 10(51):44825-44833. PubMed ID: 30485061
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Theoretical evaluation of thermal decomposition of dichlorosilane for plasma-enhanced atomic layer deposition of silicon nitride: the important role of surface hydrogen.
    Hartmann G; Ventzek PLG; Iwao T; Ishibashi K; Hwang GS
    Phys Chem Chem Phys; 2018 Nov; 20(46):29152-29158. PubMed ID: 30426994
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Kinetic Monte Carlo simulations of surface growth during plasma deposition of silicon thin films.
    Pandey SC; Singh T; Maroudas D
    J Chem Phys; 2009 Jul; 131(3):034503. PubMed ID: 19624205
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride.
    Ande CK; Knoops HC; de Peuter K; van Drunen M; Elliott SD; Kessels WM
    J Phys Chem Lett; 2015 Sep; 6(18):3610-4. PubMed ID: 26722730
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Three-dimensional etching profiles and surface speciations (via attenuated total reflection-fourier transform infrared spectroscopy) of silicon nanowires in NH4F-buffered HF solutions: a double passivation model.
    Teo BK; Chen WW; Sun XH; Wang SD; Lee ST
    J Phys Chem B; 2005 Nov; 109(46):21716-24. PubMed ID: 16853821
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Plasma Enhanced Atomic Layer Deposition of Silicon Nitride for Two Different Aminosilane Precursors Using Very High Frequency (162 MHz) Plasma Source.
    Ji YJ; Kim HI; Choi SY; Kang JE; Ellingboe AR; Chandra H; Lee CW; Yeom GY
    ACS Appl Mater Interfaces; 2023 Jun; 15(23):28763-28771. PubMed ID: 37269552
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Correlation between in Situ Diagnostics of the Hydrogen Plasma and the Interface Passivation Quality of Hydrogen Plasma Post-Treated a-Si:H in Silicon Heterojunction Solar Cells.
    Soman A; Nsofor U; Das U; Gu T; Hegedus S
    ACS Appl Mater Interfaces; 2019 May; 11(17):16181-16190. PubMed ID: 30951278
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si₂Cl₆ and NH₃ Plasma.
    Ovanesyan RA; Hausmann DM; Agarwal S
    ACS Appl Mater Interfaces; 2015 May; 7(20):10806-13. PubMed ID: 25927250
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Nitrogen interaction with hydrogen-terminated silicon surfaces at the atomic scale.
    Dai M; Wang Y; Kwon J; Halls MD; Chabal YJ
    Nat Mater; 2009 Oct; 8(10):825-30. PubMed ID: 19684585
    [TBL] [Abstract][Full Text] [Related]  

  • 19.
    Nakane K; Vervuurt RHJ; Tsutsumi T; Kobayashi N; Hori M
    ACS Appl Mater Interfaces; 2019 Oct; 11(40):37263-37269. PubMed ID: 31513740
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Plasma enhanced atomic layer deposition of silicon nitride using magnetized very high frequency plasma.
    Ji YJ; Kim HI; Kang JE; Choi SY; Kim KH; Kim DS; Ellingboe AR; Kim HM; Yeom GY; Kim DW
    Nanotechnology; 2024 Apr; 35(27):. PubMed ID: 38522102
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.