These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

111 related articles for article (PubMed ID: 29381323)

  • 1. Polarization Effects in Graded AlGaN Nanolayers Revealed by Current-Sensing and Kelvin Probe Microscopy.
    Lytvyn PM; Kuchuk AV; Mazur YI; Li C; Ware ME; Wang ZM; Kladko VP; Belyaev AE; Salamo GJ
    ACS Appl Mater Interfaces; 2018 Feb; 10(7):6755-6763. PubMed ID: 29381323
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Nanoscale Electrostructural Characterization of Compositionally Graded Al(x)Ga(1-x)N Heterostructures on GaN/Sapphire (0001) Substrate.
    Kuchuk AV; Lytvyn PM; Li C; Stanchu HV; Mazur YI; Ware ME; Benamara M; Ratajczak R; Dorogan V; Kladko VP; Belyaev AE; Salamo GG
    ACS Appl Mater Interfaces; 2015 Oct; 7(41):23320-7. PubMed ID: 26431166
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Solubility Limit of Ge Dopants in AlGaN: A Chemical and Microstructural Investigation Down to the Nanoscale.
    Bougerol C; Robin E; Di Russo E; Bellet-Amalric E; Grenier V; Ajay A; Rigutti L; Monroy E
    ACS Appl Mater Interfaces; 2021 Jan; 13(3):4165-4173. PubMed ID: 33449632
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Enhancing GaN/Al
    Zhang L; Wu H; He C; Zhang K; Liu Y; Wang Q; He L; Zhao W; Chen Z
    Micromachines (Basel); 2024 Jun; 15(6):. PubMed ID: 38930751
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Dopant Distribution in Atomic Layer Deposited ZnO:Al Films Visualized by Transmission Electron Microscopy and Atom Probe Tomography.
    Wu Y; Giddings AD; Verheijen MA; Macco B; Prosa TJ; Larson DJ; Roozeboom F; Kessels WMM
    Chem Mater; 2018 Feb; 30(4):1209-1217. PubMed ID: 29515290
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale.
    Fisichella G; Greco G; Roccaforte F; Giannazzo F
    Nanoscale; 2014 Aug; 6(15):8671-80. PubMed ID: 24946753
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Performance enhancement of AlGaN-based 365  nm ultraviolet light-emitting diodes with a band-engineering last quantum barrier.
    He L; Zhao W; Zhang K; He C; Wu H; Liu N; Song W; Chen Z; Li S
    Opt Lett; 2018 Feb; 43(3):515-518. PubMed ID: 29400829
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Field-induced doping-mediated tunability in work function of Al-doped ZnO: Kelvin probe force microscopy and first-principle theory.
    Kumar M; Mookerjee S; Som T
    Nanotechnology; 2016 Sep; 27(37):375702. PubMed ID: 27487192
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Polarization-induced pn diodes in wide-band-gap nanowires with ultraviolet electroluminescence.
    Carnevale SD; Kent TF; Phillips PJ; Mills MJ; Rajan S; Myers RC
    Nano Lett; 2012 Feb; 12(2):915-20. PubMed ID: 22268600
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Filamentary High-Resolution Electrical Probes for Nanoengineering.
    Soh EJH; Sarwat SG; Mazzotta G; Porter BF; Riede M; Nicholas R; Kim JS; Bhaskaran H
    Nano Lett; 2020 Feb; 20(2):1067-1073. PubMed ID: 31904977
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters.
    Zhao C; Ebaid M; Zhang H; Priante D; Janjua B; Zhang D; Wei N; Alhamoud AA; Shakfa MK; Ng TK; Ooi BS
    Nanoscale; 2018 Aug; 10(34):15980-15988. PubMed ID: 29897082
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations.
    Lee HP; Perozek J; Rosario LD; Bayram C
    Sci Rep; 2016 Nov; 6():37588. PubMed ID: 27869222
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Compositionally graded III-nitride alloys: building blocks for efficient ultraviolet optoelectronics and power electronics.
    Zhang H; Huang C; Song K; Yu H; Xing C; Wang D; Liu Z; Sun H
    Rep Prog Phys; 2021 Mar; 84(4):. PubMed ID: 33477132
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Towards quantification of doping in gallium arsenide nanostructures by low-energy scanning electron microscopy and conductive atomic force microscopy.
    Guo R; Walther T
    J Microsc; 2024 Mar; 293(3):160-168. PubMed ID: 38234217
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Kelvin probe microscopy of localized electric potentials induced in insulating materials by electron irradiation.
    Stevens-Kalceff MA
    Microsc Microanal; 2004 Dec; 10(6):797-803. PubMed ID: 19780322
    [TBL] [Abstract][Full Text] [Related]  

  • 16. A Study on the Increase of Leakage Current in AlGaN Detectors with Increasing Al Composition.
    Huang Y; Yang J; Zhao D; Zhang Y; Liu Z; Liang F; Chen P
    Nanomaterials (Basel); 2023 Jan; 13(3):. PubMed ID: 36770485
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Characterizing defects and transport in Si nanowire devices using Kelvin probe force microscopy.
    Bae SS; Prokopuk N; Quitoriano NJ; Adams SM; Ragan R
    Nanotechnology; 2012 Oct; 23(40):405706. PubMed ID: 22995919
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Improvement of p-Type AlGaN Conductivity with an Alternating Mg-Doped/Un-Doped AlGaN Layer Structure.
    Chen CC; Lin YR; Lin YW; Su YC; Chen CC; Huang TC; Wu PH; Yang CC; Mou S; Averett KL
    Micromachines (Basel); 2021 Jul; 12(7):. PubMed ID: 34357245
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Force gradient sensitive detection in lift-mode Kelvin probe force microscopy.
    Ziegler D; Stemmer A
    Nanotechnology; 2011 Feb; 22(7):075501. PubMed ID: 21233549
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Understanding the atomic-scale contrast in Kelvin probe force microscopy.
    Nony L; Foster AS; Bocquet F; Loppacher C
    Phys Rev Lett; 2009 Jul; 103(3):036802. PubMed ID: 19659305
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 6.