These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
269 related articles for article (PubMed ID: 29393855)
1. Electronic structure of stoichiometric and oxygen-deficient ferroelectric Hf Perevalov TV; Islamov DR; Gritsenko VA; Prosvirin IP Nanotechnology; 2018 May; 29(19):194001. PubMed ID: 29393855 [TBL] [Abstract][Full Text] [Related]
2. Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si. Chernikova A; Kozodaev M; Markeev A; Negrov D; Spiridonov M; Zarubin S; Bak O; Buragohain P; Lu H; Suvorova E; Gruverman A; Zenkevich A ACS Appl Mater Interfaces; 2016 Mar; 8(11):7232-7. PubMed ID: 26931409 [TBL] [Abstract][Full Text] [Related]
3. Effect of Polarization Reversal in Ferroelectric TiN/Hf Matveyev Y; Negrov D; Chernikova A; Lebedinskii Y; Kirtaev R; Zarubin S; Suvorova E; Gloskovskii A; Zenkevich A ACS Appl Mater Interfaces; 2017 Dec; 9(49):43370-43376. PubMed ID: 29160064 [TBL] [Abstract][Full Text] [Related]
4. Interface-engineered ferroelectricity of epitaxial Hf Shi S; Xi H; Cao T; Lin W; Liu Z; Niu J; Lan D; Zhou C; Cao J; Su H; Zhao T; Yang P; Zhu Y; Yan X; Tsymbal EY; Tian H; Chen J Nat Commun; 2023 Mar; 14(1):1780. PubMed ID: 36997572 [TBL] [Abstract][Full Text] [Related]
5. Nanoscale Doping and Its Impact on the Ferroelectric and Piezoelectric Properties of Hf Chouprik A; Kirtaev R; Korostylev E; Mikheev V; Spiridonov M; Negrov D Nanomaterials (Basel); 2022 Apr; 12(9):. PubMed ID: 35564195 [TBL] [Abstract][Full Text] [Related]
6. Polarization-dependent electric potential distribution across nanoscale ferroelectric Hf Matveyev Y; Mikheev V; Negrov D; Zarubin S; Kumar A; Grimley ED; LeBeau JM; Gloskovskii A; Tsymbal EY; Zenkevich A Nanoscale; 2019 Nov; 11(42):19814-19822. PubMed ID: 31624822 [TBL] [Abstract][Full Text] [Related]
7. Effect of ferroelectric and interface films on the tunneling electroresistance of the Al Shekhawat A; Hsain HA; Lee Y; Jones JL; Moghaddam S Nanotechnology; 2021 Sep; 32(48):. PubMed ID: 34407525 [TBL] [Abstract][Full Text] [Related]
8. Epitaxial Integration on Si(001) of Ferroelectric Hf Lyu J; Fina I; Fontcuberta J; Sánchez F ACS Appl Mater Interfaces; 2019 Feb; 11(6):6224-6229. PubMed ID: 30657323 [TBL] [Abstract][Full Text] [Related]
9. Improved Ferroelectric Switching Endurance of La-Doped Hf Chernikova AG; Kozodaev MG; Negrov DV; Korostylev EV; Park MH; Schroeder U; Hwang CS; Markeev AM ACS Appl Mater Interfaces; 2018 Jan; 10(3):2701-2708. PubMed ID: 29282976 [TBL] [Abstract][Full Text] [Related]
10. Ferroelectricity in Hf Chouprik A; Zakharchenko S; Spiridonov M; Zarubin S; Chernikova A; Kirtaev R; Buragohain P; Gruverman A; Zenkevich A; Negrov D ACS Appl Mater Interfaces; 2018 Mar; 10(10):8818-8826. PubMed ID: 29464951 [TBL] [Abstract][Full Text] [Related]
11. Inductive crystallization effect of atomic-layer-deposited Hf0.5Zr0.5O2 films for ferroelectric application. Zhang X; Chen L; Sun QQ; Wang LH; Zhou P; Lu HL; Wang PF; Ding SJ; Zhang DW Nanoscale Res Lett; 2015; 10():25. PubMed ID: 25852322 [TBL] [Abstract][Full Text] [Related]
12. High-Speed Switching and Giant Electroresistance in an Epitaxial Hf Du X; Sun H; Wang H; Li J; Yin Y; Li X ACS Appl Mater Interfaces; 2022 Jan; 14(1):1355-1361. PubMed ID: 34958206 [TBL] [Abstract][Full Text] [Related]
13. A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf Kim BS; Hyun SD; Moon T; Do Kim K; Lee YH; Park HW; Lee YB; Roh J; Kim BY; Kim HH; Park MH; Hwang CS Nanoscale Res Lett; 2020 Apr; 15(1):72. PubMed ID: 32266598 [TBL] [Abstract][Full Text] [Related]
14. Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO Koroleva AA; Chernikova AG; Zarubin SS; Korostylev E; Khakimov RR; Zhuk MY; Markeev AM ACS Omega; 2022 Dec; 7(50):47084-47095. PubMed ID: 36570284 [TBL] [Abstract][Full Text] [Related]
15. Electrically induced cancellation and inversion of piezoelectricity in ferroelectric Hf Lu H; Kim DJ; Aramberri H; Holzer M; Buragohain P; Dutta S; Schroeder U; Deshpande V; Íñiguez J; Gruverman A; Dubourdieu C Nat Commun; 2024 Jan; 15(1):860. PubMed ID: 38287021 [TBL] [Abstract][Full Text] [Related]
17. First direct observation of the built-in electric field and oxygen vacancy migration in ferroelectric Hf Chen L; Liang Z; Shao S; Huang Q; Tang K; Huang R Nanoscale; 2023 Apr; 15(15):7014-7022. PubMed ID: 36970751 [TBL] [Abstract][Full Text] [Related]
18. A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2 films by pulse-switching measurement. Kim HJ; Park MH; Kim YJ; Lee YH; Moon T; Kim KD; Hyun SD; Hwang CS Nanoscale; 2016 Jan; 8(3):1383-9. PubMed ID: 26511062 [TBL] [Abstract][Full Text] [Related]
19. Programmable Ferroelectricity in Hf Shao M; Liu H; He R; Li X; Wu L; Ma J; Ye C; Hu X; Zhao R; Zhong Z; Yu Y; Wan C; Yang Y; Nan CW; Bai X; Ren TL; Renshaw Wang X Nano Lett; 2024 Jan; 24(4):1231-1237. PubMed ID: 38251914 [TBL] [Abstract][Full Text] [Related]
20. A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf Kim SJ; Mohan J; Kim HS; Hwang SM; Kim N; Jung YC; Sahota A; Kim K; Yu HY; Cha PR; Young CD; Choi R; Ahn J; Kim J Materials (Basel); 2020 Jul; 13(13):. PubMed ID: 32630791 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]