These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

154 related articles for article (PubMed ID: 29425135)

  • 1. Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique.
    Wu CC; You HC; Lin YH; Yang CJ; Hsiao YP; Liao TP; Yang WL
    Materials (Basel); 2018 Feb; 11(2):. PubMed ID: 29425135
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Advanced Cu chemical displacement technique for SiO2-based electrochemical metallization ReRAM application.
    Chin FT; Lin YH; You HC; Yang WL; Lin LM; Hsiao YP; Ko CM; Chao TS
    Nanoscale Res Lett; 2014; 9(1):592. PubMed ID: 25364318
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering.
    Zhao X; Li Y; Ai C; Wen D
    Materials (Basel); 2019 Apr; 12(8):. PubMed ID: 31003535
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Improved bipolar resistive switching memory characteristics in Ge0.5Se0.5 solid electrolyte by using dispersed silver nanocrystals on bottom electrode.
    Kim JH; Nam KH; Hwang I; Cho WJ; Park B; Chung HB
    J Nanosci Nanotechnol; 2014 Dec; 14(12):9498-503. PubMed ID: 25971090
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices.
    Ambrosi E; Bricalli A; Laudato M; Ielmini D
    Faraday Discuss; 2019 Feb; 213(0):87-98. PubMed ID: 30364922
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Flexible resistive switching memory with a Ni/CuO x /Ni structure using an electrochemical deposition process.
    Park K; Lee JS
    Nanotechnology; 2016 Mar; 27(12):125203. PubMed ID: 26889689
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Improvement in Resistance Switching of SiC-Based Nonvolatile Memory by Solution-Deposited HfO
    Kim TW; Cho WJ
    J Nanosci Nanotechnol; 2019 Mar; 19(3):1248-1253. PubMed ID: 30469171
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Resistive switching characteristics of the Cr/ZnO/Cr structure.
    Yoo EJ; Kim JH; Song JH; Yoon TS; Choi YJ; Kang CJ
    J Nanosci Nanotechnol; 2013 Sep; 13(9):6395-9. PubMed ID: 24205668
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Resistive Switching Characteristics of Nonvolatile Memory with HSQ Film Using Microwave Irradiation.
    Min SY; Cho WJ
    J Nanosci Nanotechnol; 2020 Aug; 20(8):4740-4745. PubMed ID: 32126650
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Effects of Al Addition on Resistive-Switching Characteristics of Solution Processed Zn-Sn-O ReRAMs.
    Kim TW; Cho WJ
    J Nanosci Nanotechnol; 2019 Oct; 19(10):6099-6105. PubMed ID: 31026916
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Flexible resistive random access memory devices by using NiO
    Lee K; Park JW; Tchoe Y; Yoon J; Chung K; Yoon H; Lee S; Yoon C; Ho Park B; Yi GC
    Nanotechnology; 2017 May; 28(20):205202. PubMed ID: 28303797
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Design of Materials Configuration for Optimizing Redox-Based Resistive Switching Memories.
    Chen S; Valov I
    Adv Mater; 2022 Jan; 34(3):e2105022. PubMed ID: 34695257
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Uncovering the Indium Filament Revolution in Transparent Bipolar ITO/SiO
    Qian K; Han X; Li H; Chen T; Lee PS
    ACS Appl Mater Interfaces; 2020 Jan; 12(4):4579-4585. PubMed ID: 31891483
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Resistive switching characteristics of ZnO nanowires.
    Yoo EJ; Shin IK; Yoon TS; Choi YJ; Kang CJ
    J Nanosci Nanotechnol; 2014 Dec; 14(12):9459-64. PubMed ID: 25971083
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Effects of a Nb nanopin electrode on the resistive random-access memory switching characteristics of NiO thin films.
    Ahn Y; Shin HW; Lee TH; Kim WH; Son JY
    Nanoscale; 2018 Jul; 10(28):13443-13448. PubMed ID: 29972166
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Synthesis and Memristor Effect of a Forming-Free ZnO Nanocrystalline Films.
    Tominov RV; Vakulov ZE; Avilov VI; Khakhulin DA; Fedotov AA; Zamburg EG; Smirnov VA; Ageev OA
    Nanomaterials (Basel); 2020 May; 10(5):. PubMed ID: 32466144
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Switching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM.
    Arita M; Takahashi A; Ohno Y; Nakane A; Tsurumaki-Fukuchi A; Takahashi Y
    Sci Rep; 2015 Nov; 5():17103. PubMed ID: 26611856
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Sustained Resistive Switching in a Single Cu:7,7,8,8-tetracyanoquinodimethane Nanowire: A Promising Material for Resistive Random Access Memory.
    Basori R; Kumar M; Raychaudhuri AK
    Sci Rep; 2016 Jun; 6():26764. PubMed ID: 27245099
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Critical role of a double-layer configuration in solution-based unipolar resistive switching memories.
    Carlos E; Kiazadeh A; Deuermeier J; Branquinho R; Martins R; Fortunato E
    Nanotechnology; 2018 Aug; 29(34):345206. PubMed ID: 29863489
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Ionic Liquid Crystal Thin Film as Switching Layer in Nonvolatile Resistive Memory.
    Zhang W; Komatsu H; Maruyama S; Kaminaga K; Matsumoto Y
    ACS Appl Mater Interfaces; 2023 Nov; ():. PubMed ID: 37910855
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.