These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

188 related articles for article (PubMed ID: 29442918)

  • 1. Doping Nitrogen in InGaZnO Thin Film Transistor with Double Layer Channel Structure.
    Chang SP; Shan D
    J Nanosci Nanotechnol; 2018 Apr; 18(4):2493-2497. PubMed ID: 29442918
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers.
    Zhang Y; Xie H; Dong C
    Micromachines (Basel); 2019 Nov; 10(11):. PubMed ID: 31739504
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.
    Xiao X; Zhang L; Shao Y; Zhou X; He H; Zhang S
    ACS Appl Mater Interfaces; 2018 Aug; 10(31):25850-25857. PubMed ID: 29235839
    [TBL] [Abstract][Full Text] [Related]  

  • 4. High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al
    Shao Y; Wu X; Zhang MN; Liu WJ; Ding SJ
    Nanoscale Res Lett; 2019 Apr; 14(1):122. PubMed ID: 30941527
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Graded Channel Junctionless InGaZnO Thin-Film Transistors with Both High Transporting Properties and Good Bias Stress Stability.
    Liu J; Guo J; Yang W; Wang C; Yuan B; Liu J; Wu Z; Zhang Q; Liu D; Chen H; Yu Y; Liu S; Shao G; Yao Z
    ACS Appl Mater Interfaces; 2020 Sep; 12(39):43950-43957. PubMed ID: 32886486
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Microwave annealing effect for highly reliable biosensor: dual-gate ion-sensitive field-effect transistor using amorphous InGaZnO thin-film transistor.
    Lee IK; Lee KH; Lee S; Cho WJ
    ACS Appl Mater Interfaces; 2014 Dec; 6(24):22680-6. PubMed ID: 25456792
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric.
    Liu Y; Liu C; Qin H; Peng C; Lu M; Chen Z; Zhao Y
    Membranes (Basel); 2021 Nov; 11(11):. PubMed ID: 34832130
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Improved Mobility and Bias Stability of Thin Film Transistors Using the Double-Layer a-InGaZnO/a-InGaZnO:N Channel.
    Yu H; Zhang L; Li XH; Xu HY; Liu YC
    J Nanosci Nanotechnol; 2016 Apr; 16(4):3659-63. PubMed ID: 27451684
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Dual active layer a-IGZO TFT via homogeneous conductive layer formation by photochemical H-doping.
    Jeong SK; Kim MH; Lee SY; Seo H; Choi DK
    Nanoscale Res Lett; 2014; 9(1):619. PubMed ID: 25435832
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Multifunctional Oxygen Scavenger Layer for High-Performance Oxide Thin-Film Transistors with Low-Temperature Processing.
    Kim MS; Kim HT; Yoo H; Choi DH; Park JW; Kim TS; Lim JH; Kim HJ
    ACS Appl Mater Interfaces; 2021 Jul; 13(27):31816-31824. PubMed ID: 34180652
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors.
    Zhou Y; Dong C
    Micromachines (Basel); 2018 Nov; 9(11):. PubMed ID: 30453615
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Improved Electrical Performance of SiO₂-Doped Indium Zinc Oxide Thin-Film Transistor.
    Lim Y; Hwang N; Lee J; Lee S; Yi M
    J Nanosci Nanotechnol; 2019 Mar; 19(3):1470-1473. PubMed ID: 30469207
    [TBL] [Abstract][Full Text] [Related]  

  • 13. As-Grown Crystalline InGaZnO by Spray Pyrolysis on a Flexible Substrate for a Thin-Film Transistor with Excellent Stability.
    Bae J; Ali A; Islam MM; Jeong M; Park C; Jang J
    ACS Appl Mater Interfaces; 2023 Aug; 15(33):39494-39504. PubMed ID: 37561400
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Role of
    Prasad OK; Mohanty SK; Wu CH; Yu TY; Chang KM
    Nanotechnology; 2021 Jul; 32(39):. PubMed ID: 34144544
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Argon and Oxygen Gas Flow Rate Dependency of Sputtering-Based Indium-Gallium-Zinc Oxide Thin-Film Transistors.
    Han Y; Lee DH; Cho ES; Kwon SJ; Yoo H
    Micromachines (Basel); 2023 Jul; 14(7):. PubMed ID: 37512704
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y
    Jung H; Kim WH; Park BE; Woo WJ; Oh IK; Lee SJ; Kim YC; Myoung JM; Gatineau S; Dussarrat C; Kim H
    ACS Appl Mater Interfaces; 2018 Jan; 10(2):2143-2150. PubMed ID: 29277990
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Enhancement of near-infrared detectability from InGaZnO thin film transistor with MoS
    Pak SW; Chu D; Song DY; Lee SK; Kim EK
    Nanotechnology; 2017 Nov; 28(47):475206. PubMed ID: 28967871
    [TBL] [Abstract][Full Text] [Related]  

  • 18. One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature.
    Wang C; Li Y; Jin Y; Guo G; Song Y; Huang H; He H; Wang A
    Nanomaterials (Basel); 2022 Oct; 12(19):. PubMed ID: 36234608
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Ultraviolet-Assisted Low-Thermal-Budget-Driven α-InGaZnO Thin Films for High-Performance Transistors and Logic Circuits.
    Zhang Y; He G; Wang L; Wang W; Xu X; Liu W
    ACS Nano; 2022 Mar; 16(3):4961-4971. PubMed ID: 35274929
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Effects of Nitrogen and Hydrogen Codoping on the Electrical Performance and Reliability of InGaZnO Thin-Film Transistors.
    Abliz A; Gao Q; Wan D; Liu X; Xu L; Liu C; Jiang C; Li X; Chen H; Guo T; Li J; Liao L
    ACS Appl Mater Interfaces; 2017 Mar; 9(12):10798-10804. PubMed ID: 28266830
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 10.