These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

140 related articles for article (PubMed ID: 29459919)

  • 1. Quantifying atom-scale dopant movement and electrical activation in Si:P monolayers.
    Wang X; Hagmann JA; Namboodiri P; Wyrick J; Li K; Murray RE; Myers A; Misenkosen F; Stewart MD; Richter CA; Silver RM
    Nanoscale; 2018 Mar; 10(9):4488-4499. PubMed ID: 29459919
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Suppressing Segregation in Highly Phosphorus Doped Silicon Monolayers.
    Keizer JG; Koelling S; Koenraad PM; Simmons MY
    ACS Nano; 2015 Dec; 9(12):12537-41. PubMed ID: 26568129
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Epitaxial top-gated atomic-scale silicon wire in a three-dimensional architecture.
    McKibbin SR; Scappucci G; Pok W; Simmons MY
    Nanotechnology; 2013 Feb; 24(4):045303. PubMed ID: 23291418
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy.
    Stock TJZ; Warschkow O; Constantinou PC; Li J; Fearn S; Crane E; Hofmann EVS; Kölker A; McKenzie DR; Schofield SR; Curson NJ
    ACS Nano; 2020 Mar; 14(3):3316-3327. PubMed ID: 32142256
    [TBL] [Abstract][Full Text] [Related]  

  • 5. The Impact of Dopant Segregation on the Maximum Carrier Density in Si:P Multilayers.
    Keizer JG; McKibbin SR; Simmons MY
    ACS Nano; 2015 Jul; 9(7):7080-4. PubMed ID: 26083628
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires.
    Huang C; Dede D; Morgan N; Piazza V; Hu X; Fontcuberta I Morral A; Lauhon LJ
    Nano Lett; 2023 Jul; 23(14):6284-6291. PubMed ID: 37402180
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Silicon epitaxy on H-terminated Si (100) surfaces at 250 °C.
    Deng X; Namboodiri P; Li K; Wang X; Stan G; Myers AF; Cheng X; Li T; Silver RM
    Appl Surf Sci; 2016 Aug; 378():301-307. PubMed ID: 27397949
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Direct imaging of 3D atomic-scale dopant-defect clustering processes in ion-implanted silicon.
    Koelling S; Richard O; Bender H; Uematsu M; Schulze A; Zschaetzsch G; Gilbert M; Vandervorst W
    Nano Lett; 2013 Jun; 13(6):2458-62. PubMed ID: 23675857
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Atomically precise placement of single dopants in si.
    Schofield SR; Curson NJ; Simmons MY; Ruess FJ; Hallam T; Oberbeck L; Clark RG
    Phys Rev Lett; 2003 Sep; 91(13):136104. PubMed ID: 14525322
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Behavior of phosphorous and contaminants from molecular doping combined with a conventional spike annealing method.
    Shimizu Y; Takamizawa H; Inoue K; Yano F; Nagai Y; Lamagna L; Mazzeo G; Perego M; Prati E
    Nanoscale; 2014 Jan; 6(2):706-10. PubMed ID: 24284778
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Directed Atom-by-Atom Assembly of Dopants in Silicon.
    Hudak BM; Song J; Sims H; Troparevsky MC; Humble TS; Pantelides ST; Snijders PC; Lupini AR
    ACS Nano; 2018 Jun; 12(6):5873-5879. PubMed ID: 29750507
    [TBL] [Abstract][Full Text] [Related]  

  • 12. B-Doped δ-Layers and Nanowires from Area-Selective Deposition of BCl
    Dwyer KJ; Baek S; Farzaneh A; Dreyer M; Williams JR; Butera RE
    ACS Appl Mater Interfaces; 2021 Sep; 13(34):41275-41286. PubMed ID: 34405671
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Spatial metrology of dopants in silicon with exact lattice site precision.
    Usman M; Bocquel J; Salfi J; Voisin B; Tankasala A; Rahman R; Simmons MY; Rogge S; Hollenberg LC
    Nat Nanotechnol; 2016 Sep; 11(9):763-8. PubMed ID: 27271965
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Effects of thermal annealing on the distribution of boron and phosphorus in p-i-n structured silicon nanocrystals embedded in silicon dioxide.
    Nomoto K; Cui XY; Breen A; Ceguerra AV; Perez-Wurfl I; Conibeer G; Ringer SP
    Nanotechnology; 2021 Nov; 33(7):. PubMed ID: 34763327
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Correlated Chemical and Electrically Active Dopant Analysis in Catalyst-Free Si-Doped InAs Nanowires.
    Becker J; Hill MO; Sonner M; Treu J; Döblinger M; Hirler A; Riedl H; Finley JJ; Lauhon L; Koblmüller G
    ACS Nano; 2018 Feb; 12(2):1603-1610. PubMed ID: 29385327
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice Fabrication.
    Stock TJZ; Warschkow O; Constantinou PC; Bowler DR; Schofield SR; Curson NJ
    Adv Mater; 2024 Jun; 36(24):e2312282. PubMed ID: 38380859
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Carrier properties of B atomic-layer-doped Si films grown by ECR Ar plasma-enhanced CVD without substrate heating.
    Sakuraba M; Sugawara K; Nosaka T; Akima H; Sato S
    Sci Technol Adv Mater; 2017; 18(1):294-306. PubMed ID: 28567175
    [TBL] [Abstract][Full Text] [Related]  

  • 18. 4H-SiC surface morphology after Al ion implantation and annealing with C-cap.
    Canino M; Fedeli P; Albonetti C; Nipoti R
    J Microsc; 2020 Dec; 280(3):229-240. PubMed ID: 32495384
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Comprehensive Analysis of Phosphorus-Doped Silicon Annealed by Continuous-Wave Laser Beam at High Scan Speed.
    Taiwo RA; Shin JH; Son YI
    Materials (Basel); 2022 Nov; 15(22):. PubMed ID: 36431371
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Design Rule of Electron- and Hole-Selective Contacts for Polycrystalline Silicon-Based Passivating Contact Solar Cells.
    Mo SI; Choi S; An JH; Kim BJ; Min KH; Park S; Hong JE; Oh SJ; Song HE; Oh JH; Kim KH
    ACS Appl Mater Interfaces; 2023 Oct; 15(40):46849-46860. PubMed ID: 37773933
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.