217 related articles for article (PubMed ID: 29481039)
1. Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors.
Chen HC; Chang TC; Lai WC; Chen GF; Chen BW; Hung YJ; Chang KJ; Cheng KC; Huang CS; Chen KK; Lu HH; Lin YH
ACS Appl Mater Interfaces; 2018 Aug; 10(31):25866-25870. PubMed ID: 29481039
[TBL] [Abstract][Full Text] [Related]
2. The effect of annealing ambient on the characteristics of an indium-gallium-zinc oxide thin film transistor.
Park S; Bang S; Lee S; Park J; Ko Y; Jeon H
J Nanosci Nanotechnol; 2011 Jul; 11(7):6029-33. PubMed ID: 22121652
[TBL] [Abstract][Full Text] [Related]
3. Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors.
Wang D; Furuta M
Beilstein J Nanotechnol; 2019; 10():1125-1130. PubMed ID: 33614381
[TBL] [Abstract][Full Text] [Related]
4. Photo-induced Reactive Oxygen Species Activation for Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors Using Sodium Hypochlorite.
Kim WG; Tak YJ; Yoo H; Kim HT; Park JW; Choi DH; Kim HJ
ACS Appl Mater Interfaces; 2021 Sep; 13(37):44531-44540. PubMed ID: 34505504
[TBL] [Abstract][Full Text] [Related]
5. Effect of the annealing ambient on the electrical characteristics of the amorphous InGaZnO thin film transistors.
Huang YC; Yang PY; Huang HY; Wang SJ; Cheng HC
J Nanosci Nanotechnol; 2012 Jul; 12(7):5625-30. PubMed ID: 22966622
[TBL] [Abstract][Full Text] [Related]
6. Intense Pulsed Light Annealing Process of Indium-Gallium-Zinc-Oxide Semiconductors via Flash White Light Combined with Deep-UV and Near-Infrared Drying for High-Performance Thin-Film Transistors.
Moon CJ; Kim HS
ACS Appl Mater Interfaces; 2019 Apr; 11(14):13380-13388. PubMed ID: 30882197
[TBL] [Abstract][Full Text] [Related]
7. Vertically Graded Oxygen Deficiency for Improving Electrical Characteristics and Stability of Indium Gallium Zinc Oxide Thin-Film Transistors.
Yoon CS; Kim HT; Kim MS; Yoo H; Park JW; Choi DH; Kim D; Kim HJ
ACS Appl Mater Interfaces; 2021 Jan; 13(3):4110-4116. PubMed ID: 33448781
[TBL] [Abstract][Full Text] [Related]
8. 355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistors.
Park SY; Choi Y; Seo YH; Kim H; Lee DH; Truong PL; Jeon Y; Yoo H; Kwon SJ; Lee D; Cho ES
Micromachines (Basel); 2024 Jan; 15(1):. PubMed ID: 38258222
[TBL] [Abstract][Full Text] [Related]
9. High Mobility Flexible Amorphous IGZO Thin-Film Transistors with a Low Thermal Budget Ultra-Violet Pulsed Light Process.
Benwadih M; Coppard R; Bonrad K; Klyszcz A; Vuillaume D
ACS Appl Mater Interfaces; 2016 Dec; 8(50):34513-34519. PubMed ID: 27998139
[TBL] [Abstract][Full Text] [Related]
10. Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature.
Yu BS; Jeon JY; Kang BC; Lee W; Kim YH; Ha TJ
Sci Rep; 2019 Jun; 9(1):8416. PubMed ID: 31182751
[TBL] [Abstract][Full Text] [Related]
11. High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C.
Kim WG; Tak YJ; Du Ahn B; Jung TS; Chung KB; Kim HJ
Sci Rep; 2016 Mar; 6():23039. PubMed ID: 26972476
[TBL] [Abstract][Full Text] [Related]
12. Facile Routes To Improve Performance of Solution-Processed Amorphous Metal Oxide Thin Film Transistors by Water Vapor Annealing.
Park WT; Son I; Park HW; Chung KB; Xu Y; Lee T; Noh YY
ACS Appl Mater Interfaces; 2015 Jun; 7(24):13289-94. PubMed ID: 26043206
[TBL] [Abstract][Full Text] [Related]
13. Performance Improvement of In-Ga-Zn Oxide Thin-Film Transistors by Excimer Laser Annealing.
Zhang X; Li Y; Li Y; Xie X; Yin L
Micromachines (Basel); 2024 Jan; 15(2):. PubMed ID: 38398954
[TBL] [Abstract][Full Text] [Related]
14. Effect of Simplified-Single-Step Microwave Annealing in O₂ Ambient for High Performance Solution-Processed In-Ga-Zn-O Thin Film Transistors.
Cho SK; Cho WJ
J Nanosci Nanotechnol; 2020 Jul; 20(7):4163-4169. PubMed ID: 31968435
[TBL] [Abstract][Full Text] [Related]
15. Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer.
Shin KY; Tak YJ; Kim WG; Hong S; Kim HJ
ACS Appl Mater Interfaces; 2017 Apr; 9(15):13278-13285. PubMed ID: 28299924
[TBL] [Abstract][Full Text] [Related]
16. Electrothermal Annealing (ETA) Method to Enhance the Electrical Performance of Amorphous-Oxide-Semiconductor (AOS) Thin-Film Transistors (TFTs).
Kim CK; Kim E; Lee MK; Park JY; Seol ML; Bae H; Bang T; Jeon SB; Jun S; Park SH; Choi KC; Choi YK
ACS Appl Mater Interfaces; 2016 Sep; 8(36):23820-6. PubMed ID: 27552134
[TBL] [Abstract][Full Text] [Related]
17. The Effect of Microwave Annealing of Reliability Characteristics on Amorphous IGZO Thin Film Transistors.
Wu CH; Chang KM; Chen YM; Zhang YX; Cheng CY
J Nanosci Nanotechnol; 2019 Apr; 19(4):2189-2192. PubMed ID: 30486965
[TBL] [Abstract][Full Text] [Related]
18. Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses.
Wang D; Furuta M
Beilstein J Nanotechnol; 2018; 9():2573-2580. PubMed ID: 30425903
[TBL] [Abstract][Full Text] [Related]
19. Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiO
Zhang W; Fan Z; Shen A; Dong C
Micromachines (Basel); 2021 Dec; 12(12):. PubMed ID: 34945401
[TBL] [Abstract][Full Text] [Related]
20. Influence of source and drain contacts on the properties of indium-gallium-zinc-oxide thin-film transistors based on amorphous carbon nanofilm as barrier layer.
Luo D; Xu H; Zhao M; Li M; Xu M; Zou J; Tao H; Wang L; Peng J
ACS Appl Mater Interfaces; 2015 Feb; 7(6):3633-40. PubMed ID: 25619280
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
