These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
2. Topological phase transition and evolution of edge states in In-rich InGaN/GaN quantum wells under hydrostatic pressure. Łepkowski SP; Bardyszewski W J Phys Condens Matter; 2017 Feb; 29(5):055702. PubMed ID: 27941228 [TBL] [Abstract][Full Text] [Related]
3. Phase transitions in two tunnel-coupled HgTe quantum wells: Bilayer graphene analogy and beyond. Krishtopenko SS; Knap W; Teppe F Sci Rep; 2016 Aug; 6():30755. PubMed ID: 27476745 [TBL] [Abstract][Full Text] [Related]
4. Anomalous Rashba spin-orbit interaction in electrically controlled topological insulator based on InN/GaN quantum wells. Łepkowski SP; Bardyszewski W J Phys Condens Matter; 2017 May; 29(19):195702. PubMed ID: 28327465 [TBL] [Abstract][Full Text] [Related]
5. Quantum spin Hall effect and topological phase transition in HgTe quantum wells. Bernevig BA; Hughes TL; Zhang SC Science; 2006 Dec; 314(5806):1757-61. PubMed ID: 17170299 [TBL] [Abstract][Full Text] [Related]
6. Topological insulator with negative spin-orbit coupling and transition between Weyl and Dirac semimetals in InGaN-based quantum wells. Łepkowski SP; Bardyszewski W Sci Rep; 2018 Oct; 8(1):15403. PubMed ID: 30337556 [TBL] [Abstract][Full Text] [Related]
7. Thermoelectric transport in temperature-driven two-dimensional topological insulators. Dong HM; Li LL; Xu W; Liu JL Sci Rep; 2017 Aug; 7(1):7588. PubMed ID: 28790386 [TBL] [Abstract][Full Text] [Related]
8. Quantum spin Hall effect in inverted type-II semiconductors. Liu C; Hughes TL; Qi XL; Wang K; Zhang SC Phys Rev Lett; 2008 Jun; 100(23):236601. PubMed ID: 18643529 [TBL] [Abstract][Full Text] [Related]
9. Theory of the topological anderson insulator. Groth CW; Wimmer M; Akhmerov AR; Tworzydło J; Beenakker CW Phys Rev Lett; 2009 Nov; 103(19):196805. PubMed ID: 20365944 [TBL] [Abstract][Full Text] [Related]
10. Unexpected edge conduction in mercury telluride quantum wells under broken time-reversal symmetry. Ma EY; Calvo MR; Wang J; Lian B; Mühlbauer M; Brüne C; Cui YT; Lai K; Kundhikanjana W; Yang Y; Baenninger M; König M; Ames C; Buhmann H; Leubner P; Molenkamp LW; Zhang SC; Goldhaber-Gordon D; Kelly MA; Shen ZX Nat Commun; 2015 May; 6():7252. PubMed ID: 26006728 [TBL] [Abstract][Full Text] [Related]
11. Magnetotransport properties of the quantum spin Hall and quantum Hall states in an inverted HgTe/CdTe and InAs/GaSb quantum wells. Mawrie A J Phys Condens Matter; 2022 Apr; 34(24):. PubMed ID: 35316797 [TBL] [Abstract][Full Text] [Related]
12. Quantum spin hall insulator state in HgTe quantum wells. König M; Wiedmann S; Brüne C; Roth A; Buhmann H; Molenkamp LW; Qi XL; Zhang SC Science; 2007 Nov; 318(5851):766-70. PubMed ID: 17885096 [TBL] [Abstract][Full Text] [Related]
14. Imaging currents in HgTe quantum wells in the quantum spin Hall regime. Nowack KC; Spanton EM; Baenninger M; König M; Kirtley JR; Kalisky B; Ames C; Leubner P; Brüne C; Buhmann H; Molenkamp LW; Goldhaber-Gordon D; Moler KA Nat Mater; 2013 Sep; 12(9):787-91. PubMed ID: 23770727 [TBL] [Abstract][Full Text] [Related]
15. Unconventional quantum Hall effect in Floquet topological insulators. Tahir M; Vasilopoulos P; Schwingenschlögl U J Phys Condens Matter; 2016 Sep; 28(38):385302. PubMed ID: 27460419 [TBL] [Abstract][Full Text] [Related]
16. Two-dimensional topological insulators with tunable band gaps: Single-layer HgTe and HgSe. Li J; He C; Meng L; Xiao H; Tang C; Wei X; Kim J; Kioussis N; Stocks GM; Zhong J Sci Rep; 2015 Sep; 5():14115. PubMed ID: 26365502 [TBL] [Abstract][Full Text] [Related]
17. Quantum-Hall to Insulator Transition in Ultra-Low-Carrier-Density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level. Salehi M; Shapourian H; Rosen IT; Han MG; Moon J; Shibayev P; Jain D; Goldhaber-Gordon D; Oh S Adv Mater; 2019 Sep; 31(36):e1901091. PubMed ID: 31259439 [TBL] [Abstract][Full Text] [Related]
18. Persistence of a two-dimensional topological insulator state in wide HgTe quantum wells. Olshanetsky EB; Kvon ZD; Gusev GM; Levin AD; Raichev OE; Mikhailov NN; Dvoretsky SA Phys Rev Lett; 2015 Mar; 114(12):126802. PubMed ID: 25860765 [TBL] [Abstract][Full Text] [Related]
19. Strain Engineering of the Band Gap of HgTe Quantum Wells Using Superlattice Virtual Substrates. Leubner P; Lunczer L; Brüne C; Buhmann H; Molenkamp LW Phys Rev Lett; 2016 Aug; 117(8):086403. PubMed ID: 27588871 [TBL] [Abstract][Full Text] [Related]
20. Quantum Hall effect from the topological surface states of strained bulk HgTe. Brüne C; Liu CX; Novik EG; Hankiewicz EM; Buhmann H; Chen YL; Qi XL; Shen ZX; Zhang SC; Molenkamp LW Phys Rev Lett; 2011 Mar; 106(12):126803. PubMed ID: 21517339 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]