These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
3. Building Structures Atom by Atom via Electron Beam Manipulation. Dyck O; Kim S; Jimenez-Izal E; Alexandrova AN; Kalinin SV; Jesse S Small; 2018 Sep; 14(38):e1801771. PubMed ID: 30146718 [TBL] [Abstract][Full Text] [Related]
4. Directed Atom-by-Atom Assembly of Dopants in Silicon. Hudak BM; Song J; Sims H; Troparevsky MC; Humble TS; Pantelides ST; Snijders PC; Lupini AR ACS Nano; 2018 Jun; 12(6):5873-5879. PubMed ID: 29750507 [TBL] [Abstract][Full Text] [Related]
5. Variable voltage electron microscopy: Toward atom-by-atom fabrication in 2D materials. Dyck O; Jesse S; Delby N; Kalinin SV; Lupini AR Ultramicroscopy; 2020 Apr; 211():112949. PubMed ID: 32044709 [TBL] [Abstract][Full Text] [Related]
6. Atomic-Level Sculpting of Crystalline Oxides: Toward Bulk Nanofabrication with Single Atomic Plane Precision. Jesse S; He Q; Lupini AR; Leonard DN; Oxley MP; Ovchinnikov O; Unocic RR; Tselev A; Fuentes-Cabrera M; Sumpter BG; Pennycook SJ; Kalinin SV; Borisevich AY Small; 2015 Nov; 11(44):5895-900. PubMed ID: 26478983 [TBL] [Abstract][Full Text] [Related]
7. Atom-probe for FinFET dopant characterization. Kambham AK; Mody J; Gilbert M; Koelling S; Vandervorst W Ultramicroscopy; 2011 May; 111(6):535-9. PubMed ID: 21288644 [TBL] [Abstract][Full Text] [Related]
8. Tracking atomic structure evolution during directed electron beam induced Si-atom motion in graphene via deep machine learning. Maxim Z; Jesse S; Sumpter BG; Kalinin SV; Dyck O Nanotechnology; 2021 Jan; 32(3):035703. PubMed ID: 32932246 [TBL] [Abstract][Full Text] [Related]
9. Unravelling new principles of site-selective doping contrast in the dual-beam focused ion beam/scanning electron microscope. Chee AKW Ultramicroscopy; 2020 Jun; 213():112947. PubMed ID: 32361280 [TBL] [Abstract][Full Text] [Related]
11. Direct-write liquid phase transformations with a scanning transmission electron microscope. Unocic RR; Lupini AR; Borisevich AY; Cullen DA; Kalinin SV; Jesse S Nanoscale; 2016 Aug; 8(34):15581-8. PubMed ID: 27510435 [TBL] [Abstract][Full Text] [Related]
12. Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si. Voyles PM; Muller DA; Grazul JL; Citrin PH; Gossmann HJ Nature; 2002 Apr; 416(6883):826-9. PubMed ID: 11976677 [TBL] [Abstract][Full Text] [Related]
13. High aspect ratio AFM Probe processing by helium-ion-beam induced deposition. Onishi K; Guo H; Nagano S; Fujita D Microscopy (Oxf); 2014 Nov; 63 Suppl 1():i30. PubMed ID: 25359832 [TBL] [Abstract][Full Text] [Related]
14. Probing Electron Beam Induced Transformations on a Single-Defect Level via Automated Scanning Transmission Electron Microscopy. Roccapriore KM; Boebinger MG; Dyck O; Ghosh A; Unocic RR; Kalinin SV; Ziatdinov M ACS Nano; 2022 Oct; 16(10):17116-17127. PubMed ID: 36206357 [TBL] [Abstract][Full Text] [Related]
15. Compressed Sensing of Scanning Transmission Electron Microscopy (STEM) With Nonrectangular Scans. Li X; Dyck O; Kalinin SV; Jesse S Microsc Microanal; 2018 Dec; 24(6):623-633. PubMed ID: 30588912 [TBL] [Abstract][Full Text] [Related]
16. Field mapping with nanometer-scale resolution for the next generation of electronic devices. Cooper D; de la Peña F; Béché A; Rouvière JL; Servanton G; Pantel R; Morin P Nano Lett; 2011 Nov; 11(11):4585-90. PubMed ID: 21972919 [TBL] [Abstract][Full Text] [Related]
17. Depth-dependent imaging of individual dopant atoms in silicon. Voyles PM; Muller DA; Kirkland EJ Microsc Microanal; 2004 Apr; 10(2):291-300. PubMed ID: 15306055 [TBL] [Abstract][Full Text] [Related]
18. The formation and utility of sub-angstrom to nanometer-sized electron probes in the aberration-corrected transmission electron microscope at the University of Illinois. Wen J; Mabon J; Lei C; Burdin S; Sammann E; Petrov I; Shah AB; Chobpattana V; Zhang J; Ran K; Zuo JM; Mishina S; Aoki T Microsc Microanal; 2010 Apr; 16(2):183-93. PubMed ID: 20187990 [TBL] [Abstract][Full Text] [Related]
19. Direct observation of dopant distribution in GaAs compound semiconductors using phase-shifting electron holography and Lorentz microscopy. Sasaki H; Otomo S; Minato R; Yamamoto K; Hirayama T Microscopy (Oxf); 2014 Jun; 63(3):235-42. PubMed ID: 24706942 [TBL] [Abstract][Full Text] [Related]
20. Direct imaging of 3D atomic-scale dopant-defect clustering processes in ion-implanted silicon. Koelling S; Richard O; Bender H; Uematsu M; Schulze A; Zschaetzsch G; Gilbert M; Vandervorst W Nano Lett; 2013 Jun; 13(6):2458-62. PubMed ID: 23675857 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]