130 related articles for article (PubMed ID: 29619312)
1. Impact of Plasma Electron Flux on Plasma Damage-Free Sputtering of Ultrathin Tin-Doped Indium Oxide Contact Layer on
Son KJ; Kim TK; Cha YJ; Oh SK; You SJ; Ryou JH; Kwak JS
Adv Sci (Weinh); 2018 Feb; 5(2):1700637. PubMed ID: 29619312
[TBL] [Abstract][Full Text] [Related]
2. GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer.
Lai WC; Lin CN; Lai YC; Yu P; Chi GC; Chang SJ
Opt Express; 2014 Mar; 22 Suppl 2():A396-401. PubMed ID: 24922249
[TBL] [Abstract][Full Text] [Related]
3. Near ultraviolet InGaN/AlGaN-based light-emitting diodes with highly reflective tin-doped indium oxide/Al-based reflectors.
Choi CH; Han J; Park JS; Seong TY
Opt Express; 2013 Nov; 21(22):26774-9. PubMed ID: 24216898
[TBL] [Abstract][Full Text] [Related]
4. Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes.
Zhuang Z; Iida D; Kirilenko P; Velazquez-Rizo M; Ohkawa K
Opt Express; 2020 Apr; 28(8):12311-12321. PubMed ID: 32403729
[TBL] [Abstract][Full Text] [Related]
5. Glass-Based Transparent Conductive Electrode: Its Application to Visible-to-Ultraviolet Light-Emitting Diodes.
Lee TH; Kim KH; Lee BR; Park JH; Schubert EF; Kim TG
ACS Appl Mater Interfaces; 2016 Dec; 8(51):35668-35677. PubMed ID: 27990816
[TBL] [Abstract][Full Text] [Related]
6. Light-extraction enhancement of GaN-based 395 nm flip-chip light-emitting diodes by an Al-doped ITO transparent conductive electrode.
Xu J; Zhang W; Peng M; Dai J; Chen C
Opt Lett; 2018 Jun; 43(11):2684-2687. PubMed ID: 29856393
[TBL] [Abstract][Full Text] [Related]
7. Enhancement of the light output efficiency and thermal stability of AlGaN-based deep-ultraviolet light-emitting diodes with Ag-nanodot-based p-contacts and an 8-nm p-GaN cap layer.
Pan S; Chen K; Guo Y; Liu Z; Zhou Y; Zhang R; Zheng Y
Opt Express; 2022 Dec; 30(25):44933-44942. PubMed ID: 36522906
[TBL] [Abstract][Full Text] [Related]
8. Improved light extraction of InGaN/GaN blue LEDs by GaOOH NRAs using a thin ATO seed layer.
Lee HK; Joo DH; Kim MS; Yu JS
Nanoscale Res Lett; 2012 Aug; 7(1):458. PubMed ID: 22898006
[TBL] [Abstract][Full Text] [Related]
9. Interfacial reactions of nano-structured Cu-doped indium oxide/indium tin oxide ohmic contacts to p-GaN.
Yoon YJ; Chae SW; Kim BK; Park MJ; Kwak JS
J Nanosci Nanotechnol; 2010 May; 10(5):3254-9. PubMed ID: 20358934
[TBL] [Abstract][Full Text] [Related]
10. Reduction of graphene damages during the fabrication of InGaN/GaN light emitting diodes with graphene electrodes.
Joo K; Jerng SK; Kim YS; Kim B; Moon S; Moon D; Lee GD; Song YK; Chun SH; Yoon E
Nanotechnology; 2012 Oct; 23(42):425302. PubMed ID: 23036991
[TBL] [Abstract][Full Text] [Related]
11. Fabrication of conducting-filament-embedded indium tin oxide electrodes: application to lateral-type gallium nitride light-emitting diodes.
Kim HD; Kim KH; Kim SJ; Kim TG
Opt Express; 2015 Nov; 23(22):28775-83. PubMed ID: 26561146
[TBL] [Abstract][Full Text] [Related]
12. Implementation of an indium-tin-oxide (ITO) direct-Ohmic contact structure on a GaN-based light emitting diode.
Liu YJ; Huang CC; Chen TY; Hsu CS; Liou JK; Tsai TY; Liu WC
Opt Express; 2011 Jul; 19(15):14662-70. PubMed ID: 21934828
[TBL] [Abstract][Full Text] [Related]
13. Opposite Behavior of Multilayer Graphene/ Indium-Tin-Oxide
Kim TK; Yoon YJ; Oh SK; Cha YJ; Hong IY; Cho MU; Hong CH; Choi HK; Kwak JS
J Nanosci Nanotechnol; 2018 Sep; 18(9):6106-6111. PubMed ID: 29677751
[TBL] [Abstract][Full Text] [Related]
14. Light extraction efficiency enhancement of GaN-based blue LEDs based on ITO/ InxO ohmic contacts with microstructure formed by annealing in oxygen.
Luo Y; Bai Y; Han Y; Li H; Wang L; Wang J; Sun C; Hao Z; Xiong B
Opt Express; 2016 May; 24(10):A797-809. PubMed ID: 27409953
[TBL] [Abstract][Full Text] [Related]
15. Pulsed laser deposition of ITO/AZO transparent contact layers for GaN LED applications.
Ou SL; Wuu DS; Liu SP; Fu YC; Huang SC; Horng RH
Opt Express; 2011 Aug; 19(17):16244-51. PubMed ID: 21934987
[TBL] [Abstract][Full Text] [Related]
16. Transparent conductive oxide films embedded with plasmonic nanostructure for light-emitting diode applications.
Chuang SH; Tsung CS; Chen CH; Ou SL; Horng RH; Lin CY; Wuu DS
ACS Appl Mater Interfaces; 2015 Feb; 7(4):2546-53. PubMed ID: 25562635
[TBL] [Abstract][Full Text] [Related]
17. Enhanced performance of InGaN/GaN MQW LED with strain-relaxing Ga-doped ZnO transparent conducting layer.
Kim SJ; Lee KJ; Oh S; Han JH; Lee DS; Park SJ
Opt Express; 2019 Apr; 27(8):A458-A467. PubMed ID: 31052896
[TBL] [Abstract][Full Text] [Related]
18. Fabrication of Metal-Deposited Indium Tin Oxides: Its Applications to 385 nm Light-Emitting Diodes.
Kim MJ; Kim TG
ACS Appl Mater Interfaces; 2016 Mar; 8(8):5453-7. PubMed ID: 26859604
[TBL] [Abstract][Full Text] [Related]
19. Numerical simulation and experimental investigation of GaN-based flip-chip LEDs and top-emitting LEDs.
Liu X; Zhou S; Gao Y; Hu H; Liu Y; Gui C; Liu S
Appl Opt; 2017 Dec; 56(34):9502-9509. PubMed ID: 29216064
[TBL] [Abstract][Full Text] [Related]
20. AlN/ITO-Based Hybrid Electrodes with Conducting Filaments: Their Application to Ultraviolet Light-Emitting Diodes.
Kim KH; Lee TH; Kim TG
ACS Appl Mater Interfaces; 2017 Jul; 9(28):24357-24364. PubMed ID: 28671809
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
