These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

179 related articles for article (PubMed ID: 29620021)

  • 1. Quantum transport through MoS
    Epping A; Banszerus L; Güttinger J; Krückeberg L; Watanabe K; Taniguchi T; Hassler F; Beschoten B; Stampfer C
    J Phys Condens Matter; 2018 May; 30(20):205001. PubMed ID: 29620021
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Thermal History-Dependent Current Relaxation in hBN/MoS
    Ahmed T; Bellare P; Debnath R; Roy A; Ravishankar N; Ghosh A
    ACS Nano; 2020 May; 14(5):5909-5916. PubMed ID: 32310636
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.
    Lee GH; Cui X; Kim YD; Arefe G; Zhang X; Lee CH; Ye F; Watanabe K; Taniguchi T; Kim P; Hone J
    ACS Nano; 2015 Jul; 9(7):7019-26. PubMed ID: 26083310
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS
    Lee C; Rathi S; Khan MA; Lim D; Kim Y; Yun SJ; Youn DH; Watanabe K; Taniguchi T; Kim GH
    Nanotechnology; 2018 Aug; 29(33):335202. PubMed ID: 29786609
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform.
    Cui X; Lee GH; Kim YD; Arefe G; Huang PY; Lee CH; Chenet DA; Zhang X; Wang L; Ye F; Pizzocchero F; Jessen BS; Watanabe K; Taniguchi T; Muller DA; Low T; Kim P; Hone J
    Nat Nanotechnol; 2015 Jun; 10(6):534-40. PubMed ID: 25915194
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Versatile, Low-Cost, and Portable 2D Material Transfer Setup with a Facile and Highly Efficient DIY Inert-Atmosphere Glove Compartment Option.
    Buapan K; Somphonsane R; Chiawchan T; Ramamoorthy H
    ACS Omega; 2021 Jul; 6(28):17952-17964. PubMed ID: 34308030
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Direct and Indirect Interlayer Excitons in a van der Waals Heterostructure of hBN/WS
    Okada M; Kutana A; Kureishi Y; Kobayashi Y; Saito Y; Saito T; Watanabe K; Taniguchi T; Gupta S; Miyata Y; Yakobson BI; Shinohara H; Kitaura R
    ACS Nano; 2018 Mar; 12(3):2498-2505. PubMed ID: 29481065
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Electronic transport of encapsulated graphene and WSe2 devices fabricated by pick-up of prepatterned hBN.
    Wang JI; Yang Y; Chen YA; Watanabe K; Taniguchi T; Churchill HO; Jarillo-Herrero P
    Nano Lett; 2015 Mar; 15(3):1898-903. PubMed ID: 25654184
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Study of Graphene-based 2D-Heterostructure Device Fabricated by All-Dry Transfer Process.
    Tien DH; Park JY; Kim KB; Lee N; Choi T; Kim P; Taniguchi T; Watanabe K; Seo Y
    ACS Appl Mater Interfaces; 2016 Feb; 8(5):3072-8. PubMed ID: 26771834
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Reliable Postprocessing Improvement of van der Waals Heterostructures.
    Kim Y; Herlinger P; Taniguchi T; Watanabe K; Smet JH
    ACS Nano; 2019 Dec; 13(12):14182-14190. PubMed ID: 31775000
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Bubble-Free Transfer Technique for High-Quality Graphene/Hexagonal Boron Nitride van der Waals Heterostructures.
    Iwasaki T; Endo K; Watanabe E; Tsuya D; Morita Y; Nakaharai S; Noguchi Y; Wakayama Y; Watanabe K; Taniguchi T; Moriyama S
    ACS Appl Mater Interfaces; 2020 Feb; 12(7):8533-8538. PubMed ID: 32027115
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Probing negatively charged and neutral excitons in MoS
    Jadczak J; Kutrowska-Girzycka J; Bieniek M; Kazimierczuk T; Kossacki P; Schindler JJ; Debus J; Watanabe K; Taniguchi T; Ho CH; Wójs A; Hawrylak P; Bryja L
    Nanotechnology; 2021 Jan; 32(14):145717. PubMed ID: 33463532
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Atomic layer MoS
    Ye F; Lee J; Feng PX
    Nanoscale; 2017 Nov; 9(46):18208-18215. PubMed ID: 29160324
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Layer-Controlled Chemical Vapor Deposition Growth of MoS2 Vertical Heterostructures via van der Waals Epitaxy.
    Samad L; Bladow SM; Ding Q; Zhuo J; Jacobberger RM; Arnold MS; Jin S
    ACS Nano; 2016 Jul; 10(7):7039-46. PubMed ID: 27373305
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Direct synthesis of van der Waals solids.
    Lin YC; Lu N; Perea-Lopez N; Li J; Lin Z; Peng X; Lee CH; Sun C; Calderin L; Browning PN; Bresnehan MS; Kim MJ; Mayer TS; Terrones M; Robinson JA
    ACS Nano; 2014 Apr; 8(4):3715-23. PubMed ID: 24641706
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Synthesis of hexagonal boron nitride heterostructures for 2D van der Waals electronics.
    Kim KK; Lee HS; Lee YH
    Chem Soc Rev; 2018 Aug; 47(16):6342-6369. PubMed ID: 30043784
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures.
    Lee GH; Yu YJ; Cui X; Petrone N; Lee CH; Choi MS; Lee DY; Lee C; Yoo WJ; Watanabe K; Taniguchi T; Nuckolls C; Kim P; Hone J
    ACS Nano; 2013 Sep; 7(9):7931-6. PubMed ID: 23924287
    [TBL] [Abstract][Full Text] [Related]  

  • 18. MoS
    Najafi L; Taheri B; Martín-García B; Bellani S; Di Girolamo D; Agresti A; Oropesa-Nuñez R; Pescetelli S; Vesce L; Calabrò E; Prato M; Del Rio Castillo AE; Di Carlo A; Bonaccorso F
    ACS Nano; 2018 Nov; 12(11):10736-10754. PubMed ID: 30240189
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Chemically detaching hBN crystals grown at atmospheric pressure and high temperature for high-performance graphene devices.
    Ouaj T; Kramme L; Metzelaars M; Li J; Watanabe K; Taniguchi T; Edgar JH; Beschoten B; Kögerler P; Stampfer C
    Nanotechnology; 2023 Sep; 34(47):. PubMed ID: 37607531
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS
    Khan MA; Rathi S; Lee C; Lim D; Kim Y; Yun SJ; Youn DH; Kim GH
    ACS Appl Mater Interfaces; 2018 Jul; 10(28):23961-23967. PubMed ID: 29938500
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.