These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

114 related articles for article (PubMed ID: 29677736)

  • 1. Hole Mobility Characteristics with Surface Roughness on Silicon-on-Insulator Substrate.
    Shin H; Han IK; Ko JH; Jang M
    J Nanosci Nanotechnol; 2018 Sep; 18(9):6017-6020. PubMed ID: 29677736
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Study on the Thermal Conductivity Characteristics for Ultra-Thin Body FD SOI MOSFETs Based on Phonon Scattering Mechanisms.
    Zhang G; Lai J; Su Y; Li B; Li B; Bu J; Yang CF
    Materials (Basel); 2019 Aug; 12(16):. PubMed ID: 31443215
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Quantifying surface roughness effects on phonon transport in silicon nanowires.
    Lim J; Hippalgaonkar K; Andrews SC; Majumdar A; Yang P
    Nano Lett; 2012 May; 12(5):2475-82. PubMed ID: 22524211
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Spectral phonon scattering from sub-10 nm surface roughness wavelengths in metal-assisted chemically etched Si nanowires.
    Ghossoub MG; Valavala KV; Seong M; Azeredo B; Hsu K; Sadhu JS; Singh PK; Sinha S
    Nano Lett; 2013 Apr; 13(4):1564-71. PubMed ID: 23464810
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Mobility improvement and temperature dependence in MoSe2 field-effect transistors on parylene-C substrate.
    Chamlagain B; Li Q; Ghimire NJ; Chuang HJ; Perera MM; Tu H; Xu Y; Pan M; Xiao D; Yan J; Mandrus D; Zhou Z
    ACS Nano; 2014 May; 8(5):5079-88. PubMed ID: 24730685
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Surface roughness induced electron mobility degradation in InAs nanowires.
    Wang F; Yip S; Han N; Fok K; Lin H; Hou JJ; Dong G; Hung T; Chan KS; Ho JC
    Nanotechnology; 2013 Sep; 24(37):375202. PubMed ID: 23965340
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Giant Enhancement of Hole Mobility for 4H-Silicon Carbide through Suppressing Interband Electron-Phonon Scattering.
    Sun J; Li S; Tong Z; Shao C; An M; Zhu X; Zhang C; Chen X; Wang R; Xiong Y; Frauenheim T; Liu X
    Nano Lett; 2024 Aug; 24(34):10569-10576. PubMed ID: 39106059
    [TBL] [Abstract][Full Text] [Related]  

  • 8. A multi-subband Monte Carlo study on dominance of scattering mechanisms over carrier transport in sub-10-nm Si nanowire FETs.
    Ryu H
    Nanoscale Res Lett; 2016 Dec; 11(1):36. PubMed ID: 26815605
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Impact of phonon-surface roughness scattering on thermal conductivity of thin si nanowires.
    Martin P; Aksamija Z; Pop E; Ravaioli U
    Phys Rev Lett; 2009 Mar; 102(12):125503. PubMed ID: 19392295
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Large enhancement in hole velocity and mobility in p-type [110] and [111] silicon nanowires by cross section scaling: an atomistic analysis.
    Neophytou N; Kosina H
    Nano Lett; 2010 Dec; 10(12):4913-9. PubMed ID: 21058716
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis.
    Das S; Zheng Y; Ahyi A; Kuroda MA; Dhar S
    Materials (Basel); 2022 Sep; 15(19):. PubMed ID: 36234077
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Impact of strain engineering on nanoscale strained III-V PMOSFETs.
    Chang ST; Liu YC; Ou-Yang H
    J Nanosci Nanotechnol; 2012 Jul; 12(7):5469-73. PubMed ID: 22966592
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs.
    Rogdakis K; Poli S; Bano E; Zekentes K; Pala MG
    Nanotechnology; 2009 Jul; 20(29):295202. PubMed ID: 19567960
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Influence of Scattering in Near Ballistic Silicon NanoWire Metal-Oxide-Semiconductor Field Effect Transistor.
    Arafat IS; Balamurugan NB
    J Nanosci Nanotechnol; 2016 Jun; 16(6):6032-6. PubMed ID: 27427667
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Direct measurements of surface scattering in Si nanosheets using a microscale phonon spectrometer: implications for Casimir-limit predicted by Ziman theory.
    Hertzberg JB; Aksit M; Otelaja OO; Stewart DA; Robinson RD
    Nano Lett; 2014 Feb; 14(2):403-15. PubMed ID: 24256332
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Numerical Investigation of GaN HEMT Terahertz Detection Model Considering Multiple Scattering Mechanisms.
    Meng Q; Lin Q; Wang Z; Wang Y; Jing W; Xian D; Zhao N; Yao K; Zhang F; Tian B; Jiang Z
    Nanomaterials (Basel); 2023 Feb; 13(4):. PubMed ID: 36838999
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Electronic Transport Properties of Silicane Determined from First Principles.
    Khatami MM; Gaddemane G; Van de Put ML; Fischetti MV; Moravvej-Farshi MK; Pourfath M; Vandenberghe WG
    Materials (Basel); 2019 Sep; 12(18):. PubMed ID: 31514338
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Electronic transport in nanometre-scale silicon-on-insulator membranes.
    Zhang P; Tevaarwerk E; Park BN; Savage DE; Celler GK; Knezevic I; Evans PG; Eriksson MA; Lagally MG
    Nature; 2006 Feb; 439(7077):703-6. PubMed ID: 16467833
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors.
    Sadi T; Medina-Bailon C; Nedjalkov M; Lee J; Badami O; Berrada S; Carrillo-Nunez H; Georgiev V; Selberherr S; Asenov A
    Materials (Basel); 2019 Jan; 12(1):. PubMed ID: 30609720
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Route to High Hole Mobility in GaN via Reversal of Crystal-Field Splitting.
    Poncé S; Jena D; Giustino F
    Phys Rev Lett; 2019 Aug; 123(9):096602. PubMed ID: 31524479
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 6.