These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

143 related articles for article (PubMed ID: 29677837)

  • 41. Pinch-off mechanism in double-lateral-gate junctionless transistors fabricated by scanning probe microscope based lithography.
    Larki F; Dehzangi A; Abedini A; Abdullah AM; Saion E; Hutagalung SD; Hamidon MN; Hassan J
    Beilstein J Nanotechnol; 2012; 3():817-23. PubMed ID: 23365794
    [TBL] [Abstract][Full Text] [Related]  

  • 42. Work-Function Engineering of Source-Overlapped Dual-Gate Tunnel Field-Effect Transistor.
    Lee JC; Ahn TJ; Yu YS
    J Nanosci Nanotechnol; 2018 Sep; 18(9):5925-5931. PubMed ID: 29677718
    [TBL] [Abstract][Full Text] [Related]  

  • 43. Overcoming the drawback of lower sense margin in tunnel FET based dynamic memory along with enhanced charge retention and scalability.
    Navlakha N; Kranti A
    Nanotechnology; 2017 Nov; 28(44):445203. PubMed ID: 28832340
    [TBL] [Abstract][Full Text] [Related]  

  • 44. Transient Analysis of Tunnel Field-Effect Transistor with Raised Drain.
    Kim JH; Kim HW; Shin SS; Kim S; Park BG
    J Nanosci Nanotechnol; 2019 Oct; 19(10):6212-6216. PubMed ID: 31026939
    [TBL] [Abstract][Full Text] [Related]  

  • 45. Effects of Energy Relaxation via Quantum Coupling Among Three-Dimensional Motion on the Tunneling Current of Graphene Field-Effect Transistors.
    Mao LF; Ning H; Li X
    Nanoscale Res Lett; 2015 Dec; 10(1):1039. PubMed ID: 26264688
    [TBL] [Abstract][Full Text] [Related]  

  • 46. Various and Tunable Transport Properties of WSe
    Liu C; Yan X; Zhang E; Song X; Sun Q; Ding S; Bao W; Xiu F; Zhou P; Zhang DW
    Small; 2017 May; 13(18):. PubMed ID: 28296162
    [TBL] [Abstract][Full Text] [Related]  

  • 47. Improving ESD Protection Robustness Using SiGe Source/Drain Regions in Tunnel FET.
    Yang Z; Yang Y; Yu N; Liou JJ
    Micromachines (Basel); 2018 Dec; 9(12):. PubMed ID: 30545073
    [TBL] [Abstract][Full Text] [Related]  

  • 48. Force and light tuning vertical tunneling current in the atomic layered MoS
    Li F; Lu Z; Lan YW; Jiao L; Xu M; Zhu X; Zhang X; Wu H; Qi J
    Nanotechnology; 2018 Jul; 29(27):275202. PubMed ID: 29652251
    [TBL] [Abstract][Full Text] [Related]  

  • 49. Electroosmotic flow mixing in zigzag microchannels.
    Chen JK; Yang RJ
    Electrophoresis; 2007 Mar; 28(6):975-83. PubMed ID: 17300132
    [TBL] [Abstract][Full Text] [Related]  

  • 50. High performance MoS2-based field-effect transistor enabled by hydrazine doping.
    Lim D; Kannan ES; Lee I; Rathi S; Li L; Lee Y; Khan MA; Kang M; Park J; Kim GH
    Nanotechnology; 2016 Jun; 27(22):225201. PubMed ID: 27098430
    [TBL] [Abstract][Full Text] [Related]  

  • 51. Effect of the asymmetry of the coupling of the redox molecule to the electrodes in the one-level electrochemical bridged tunneling contact on the Coulomb blockade and the operation of molecular transistor.
    Medvedev IG
    J Chem Phys; 2014 Sep; 141(12):124706. PubMed ID: 25273460
    [TBL] [Abstract][Full Text] [Related]  

  • 52. Microelectronic current-sourcing device based on band-to-band tunneling current.
    Sul O; Lee Y; Kim S; Kwon M; Sun H; Bang J; Ju H; Choi E; Lee SB
    Nanotechnology; 2022 Nov; 34(3):. PubMed ID: 36191522
    [TBL] [Abstract][Full Text] [Related]  

  • 53. Simulation for Electrical Performances of the Capacitorless Dynamic Random Access Memory Based on Junctionless FinFETs.
    Cho MS; Yoon YJ; Kim BG; Jung JH; Jang WD; Lee JH; Kang IM
    J Nanosci Nanotechnol; 2019 Oct; 19(10):6755-6761. PubMed ID: 31027024
    [TBL] [Abstract][Full Text] [Related]  

  • 54. A quantum mechanical transport approach to simulation of quadruple gate silicon nanowire transistor.
    Karimi F; Fathipour M; Hosseini R
    J Nanosci Nanotechnol; 2011 Dec; 11(12):10476-9. PubMed ID: 22408929
    [TBL] [Abstract][Full Text] [Related]  

  • 55. Catching the electron in action in real space inside a Ge-Si core-shell nanowire transistor.
    Jaishi M; Pati R
    Nanoscale; 2017 Sep; 9(36):13425-13431. PubMed ID: 28880035
    [TBL] [Abstract][Full Text] [Related]  

  • 56. The Optimization of Gate All Around-L-Shaped Bottom Select Transistor in 3D NAND Flash Memory.
    Zou X; Jin L; Jiang D; Zhang Y; Chen G; Xia Z; Huo Z
    J Nanosci Nanotechnol; 2018 Aug; 18(8):5528-5533. PubMed ID: 29458606
    [TBL] [Abstract][Full Text] [Related]  

  • 57. Magnetic field enhanced resonant tunneling in a silicon nanowire single-electron-transistor.
    Aravind K; Lin MC; Ho IL; Wu CS; Kuo W; Kuan CH; Chang-Liao KS; Chen CD
    J Nanosci Nanotechnol; 2012 Mar; 12(3):2509-12. PubMed ID: 22755082
    [TBL] [Abstract][Full Text] [Related]  

  • 58. Bias spectroscopy and simultaneous single-electron transistor charge state detection of Si:P double dots.
    Mitic M; Petersson KD; Cassidy MC; Starrett RP; Gauja E; Ferguson AJ; Yang C; Jamieson DN; Clark RG; Dzurak AS
    Nanotechnology; 2008 Jul; 19(26):265201. PubMed ID: 21828673
    [TBL] [Abstract][Full Text] [Related]  

  • 59. Slowing DNA Translocation in a Nanofluidic Field-Effect Transistor.
    Liu Y; Yobas L
    ACS Nano; 2016 Apr; 10(4):3985-94. PubMed ID: 27019102
    [TBL] [Abstract][Full Text] [Related]  

  • 60. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas.
    Zhang K; Sumiya M; Liao M; Koide Y; Sang L
    Sci Rep; 2016 Mar; 6():23683. PubMed ID: 27021054
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 8.