203 related articles for article (PubMed ID: 29700706)
1. Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO
Tan Q; Wang Q; Liu Y; Yan H; Cai W; Yang Z
Nanoscale Res Lett; 2018 Apr; 13(1):127. PubMed ID: 29700706
[TBL] [Abstract][Full Text] [Related]
2. Implementation of an electrically modifiable artificial synapse based on ferroelectric field-effect transistors using Al-doped HfO
Yoon SJ; Moon SE; Yoon SM
Nanoscale; 2020 Jul; 12(25):13421-13430. PubMed ID: 32614009
[TBL] [Abstract][Full Text] [Related]
3. Robustly Stable Ferroelectric Polarization States Enable Long-Term Nonvolatile Storage against Radiation in HfO
Dai S; Yang Q; Zeng B; Zheng S; Zhong X; Xiang J; Gao J; Zhao J; Liao J; Liao M; Zhou Y
ACS Appl Mater Interfaces; 2022 Nov; 14(45):51459-51467. PubMed ID: 36318591
[TBL] [Abstract][Full Text] [Related]
4. Impact of oxide gate electrode for ferroelectric field-effect transistors with metal-ferroelectric-metal-insulator-semiconductor gate stack using undoped HfO
Choi SN; Moon SE; Yoon SM
Nanotechnology; 2021 Feb; 32(8):085709. PubMed ID: 33176285
[TBL] [Abstract][Full Text] [Related]
5. Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory.
Sakai S; Takahashi M
Materials (Basel); 2010 Nov; 3(11):4950-4964. PubMed ID: 28883363
[TBL] [Abstract][Full Text] [Related]
6. Two-Dimensional CIPS-InSe van der Waal Heterostructure Ferroelectric Field Effect Transistor for Nonvolatile Memory Applications.
Singh P; Baek S; Yoo HH; Niu J; Park JH; Lee S
ACS Nano; 2022 Apr; 16(4):5418-5426. PubMed ID: 35234041
[TBL] [Abstract][Full Text] [Related]
7. Ferroelectric-Modulated MoS
Xu L; Duan Z; Zhang P; Wang X; Zhang J; Shang L; Jiang K; Li Y; Zhu L; Gong Y; Hu Z; Chu J
ACS Appl Mater Interfaces; 2020 Oct; 12(40):44902-44911. PubMed ID: 32931241
[TBL] [Abstract][Full Text] [Related]
8. Area-Scalable 10
Takahashi M; Sakai S
Nanomaterials (Basel); 2021 Jan; 11(1):. PubMed ID: 33406688
[TBL] [Abstract][Full Text] [Related]
9. Controlled n-Type Doping of Carbon Nanotube Transistors by an Organorhodium Dimer.
Geier ML; Moudgil K; Barlow S; Marder SR; Hersam MC
Nano Lett; 2016 Jul; 16(7):4329-34. PubMed ID: 27253896
[TBL] [Abstract][Full Text] [Related]
10. Reliable Nonvolatile Memory Black Phosphorus Ferroelectric Field-Effect Transistors with van der Waals Buffer.
Yan S; Huang H; Xie Z; Ye G; Li XX; Taniguchi T; Watanabe K; Han Z; Chen X; Wang J; Chen JH
ACS Appl Mater Interfaces; 2019 Nov; 11(45):42358-42364. PubMed ID: 31633328
[TBL] [Abstract][Full Text] [Related]
11. Ferroelectric field-effect transistors based on HfO
Mulaosmanovic H; Breyer ET; Dünkel S; Beyer S; Mikolajick T; Slesazeck S
Nanotechnology; 2021 Sep; 32(50):. PubMed ID: 34320479
[TBL] [Abstract][Full Text] [Related]
12. Memory Window and Endurance Improvement of Hf
Xiao W; Liu C; Peng Y; Zheng S; Feng Q; Zhang C; Zhang J; Hao Y; Liao M; Zhou Y
Nanoscale Res Lett; 2019 Jul; 14(1):254. PubMed ID: 31350697
[TBL] [Abstract][Full Text] [Related]
13. Transferred wrinkled Al2O3 for highly stretchable and transparent graphene-carbon nanotube transistors.
Chae SH; Yu WJ; Bae JJ; Duong DL; Perello D; Jeong HY; Ta QH; Ly TH; Vu QA; Yun M; Duan X; Lee YH
Nat Mater; 2013 May; 12(5):403-9. PubMed ID: 23455851
[TBL] [Abstract][Full Text] [Related]
14. Atomic-Layer-Deposition Growth of an Ultrathin HfO
Xiao M; Qiu C; Zhang Z; Peng LM
ACS Appl Mater Interfaces; 2017 Oct; 9(39):34050-34056. PubMed ID: 28901123
[TBL] [Abstract][Full Text] [Related]
15. Controllable Hysteresis and Threshold Voltage of Single-Walled Carbon Nano-tube Transistors with Ferroelectric Polymer Top-Gate Insulators.
Sun YL; Xie D; Xu JL; Zhang C; Dai RX; Li X; Meng XJ; Zhu HW
Sci Rep; 2016 Mar; 6():23090. PubMed ID: 26980284
[TBL] [Abstract][Full Text] [Related]
16. Intrinsic memory function of carbon nanotube-based ferroelectric field-effect transistor.
Fu W; Xu Z; Bai X; Gu C; Wang E
Nano Lett; 2009 Mar; 9(3):921-5. PubMed ID: 19206218
[TBL] [Abstract][Full Text] [Related]
17. Self-aligned ballistic n-type single-walled carbon nanotube field-effect transistors with adjustable threshold voltage.
Zhang Z; Wang S; Ding L; Liang X; Pei T; Shen J; Xu H; Chen Q; Cui R; Li Y; Peng LM
Nano Lett; 2008 Nov; 8(11):3696-701. PubMed ID: 18947214
[TBL] [Abstract][Full Text] [Related]
18. Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels.
Van NH; Lee JH; Whang D; Kang DJ
Nanomicro Lett; 2015; 7(1):35-41. PubMed ID: 30464954
[TBL] [Abstract][Full Text] [Related]
19. Near-ideal subthreshold swing MoS
Pan Y; Jia K; Huang K; Wu Z; Bai G; Yu J; Zhang Z; Zhang Q; Yin H
Nanotechnology; 2019 Mar; 30(9):095202. PubMed ID: 30561381
[TBL] [Abstract][Full Text] [Related]
20. Flexible CMOS-Like Circuits Based on Printed P-Type and N-Type Carbon Nanotube Thin-Film Transistors.
Zhang X; Zhao J; Dou J; Tange M; Xu W; Mo L; Xie J; Xu W; Ma C; Okazaki T; Cui Z
Small; 2016 Sep; 12(36):5066-5073. PubMed ID: 27152874
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]