These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

187 related articles for article (PubMed ID: 29716043)

  • 1. Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures.
    Oh JT; Lee SY; Moon YT; Moon JH; Park S; Hong KY; Song KY; Oh C; Shim JI; Jeong HH; Song JO; Amano H; Seong TY
    Opt Express; 2018 Apr; 26(9):11194-11200. PubMed ID: 29716043
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments.
    Wong MS; Kearns JA; Lee C; Smith JM; Lynsky C; Lheureux G; Choi H; Kim J; Kim C; Nakamura S; Speck JS; DenBaars SP
    Opt Express; 2020 Feb; 28(4):5787-5793. PubMed ID: 32121793
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Nonradiative recombination--critical in choosing quantum well number for InGaN/GaN light-emitting diodes.
    Zhang YP; Zhang ZH; Liu W; Tan ST; Ju ZG; Zhang XL; Ji Y; Wang LC; Kyaw Z; Hasanov N; Zhu BB; Lu SP; Sun XW; Demir HV
    Opt Express; 2015 Feb; 23(3):A34-42. PubMed ID: 25836251
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Effects of number of quantum wells and Shockley-Read-Hall recombination in deep-ultraviolet light-emitting diodes.
    Chen FM; Huang MF; Chang JY; Kuo YK
    Opt Lett; 2020 Jul; 45(13):3749-3752. PubMed ID: 32630945
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Understanding the Sidewall Passivation Effects in AlGaInP/GaInP Micro-LED.
    Park J; Baek W; Geum DM; Kim S
    Nanoscale Res Lett; 2022 Mar; 17(1):29. PubMed ID: 35230527
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes.
    Lu T; Li S; Zhang K; Liu C; Yin Y; Wu L; Wang H; Yang X; Xiao G; Zhou Y
    Opt Express; 2011 Sep; 19(19):18319-23. PubMed ID: 21935200
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Optimization of Current Injection in AlGaInP Core-Shell Nanowire Light-Emitting Diodes.
    Kivisaari P; Berg A; Karimi M; Storm K; Limpert S; Oksanen J; Samuelson L; Pettersson H; Borgström MT
    Nano Lett; 2017 Jun; 17(6):3599-3606. PubMed ID: 28535346
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes.
    Zhao P; Zhao H
    Opt Express; 2012 Sep; 20 Suppl 5():A765-76. PubMed ID: 23037543
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Limited impact of the sidewall effect in dependence of temperature for InGaN-based blue micro-LEDs grown on a silicon substrate.
    Zheng X; Tong C; Liu Y; Ai S; Fu Y; Zhou M; Huang T; Lu Y; Chen Z; Guo W
    Opt Lett; 2024 Sep; 49(17):4867-4870. PubMed ID: 39207984
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells.
    Zhao H; Liu G; Zhang J; Poplawsky JD; Dierolf V; Tansu N
    Opt Express; 2011 Jul; 19 Suppl 4():A991-A1007. PubMed ID: 21747571
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Enhanced light extraction of the deep-ultraviolet micro-LED via rational design of chip sidewall.
    Tian M; Yu H; Memon MH; Xing Z; Huang C; Jia H; Zhang H; Wang D; Fang S; Sun H
    Opt Lett; 2021 Oct; 46(19):4809-4812. PubMed ID: 34598205
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Efficiency improvement by using metal-insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes.
    Yin J; Hwang D; Siboni HZ; Fathi E; Chaji R; Ban D
    Front Optoelectron; 2024 Mar; 17(1):8. PubMed ID: 38546801
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Alternative Strategy to Reduce Surface Recombination for InGaN/GaN Micro-light-Emitting Diodes-Thinning the Quantum Barriers to Manage the Current Spreading.
    Chang L; Yeh YW; Hang S; Tian K; Kou J; Bi W; Zhang Y; Zhang ZH; Liu Z; Kuo HC
    Nanoscale Res Lett; 2020 Aug; 15(1):160. PubMed ID: 32761479
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Light Extraction Analysis of AlGaInP Based Red and GaN Based Blue/Green Flip-Chip Micro-LEDs Using the Monte Carlo Ray Tracing Method.
    Lan S; Wan H; Zhao J; Zhou S
    Micromachines (Basel); 2019 Dec; 10(12):. PubMed ID: 31817856
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Improvement of light extraction efficiency in AlGaInP-based vertical miniaturized-light-emitting diodes via surface texturing.
    Cui S; Shi L; Jin L; Zhou Q; Sun Y; Jin C; Hu J; Wen K; Xu Z; Zhou S
    Opt Lett; 2024 Mar; 49(6):1449-1452. PubMed ID: 38489422
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Impact of the surface recombination on InGaN/GaN-based blue micro-light emitting diodes.
    Kou J; Shen CC; Shao H; Che J; Hou X; Chu C; Tian K; Zhang Y; Zhang ZH; Kuo HC
    Opt Express; 2019 Jun; 27(12):A643-A653. PubMed ID: 31252844
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Improved efficiency of InGaN/GaN light-emitting diodes with perpendicular magnetic field gradients.
    Han JH; Kim JJ; Leem YC; Kim SJ; Kwak W; Jeong WL; Cho B; Lee DS; Park SJ
    Opt Express; 2019 Dec; 27(25):36708-36716. PubMed ID: 31873444
    [TBL] [Abstract][Full Text] [Related]  

  • 18. GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells.
    Chang HM; Lai WC; Chen WS; Chang SJ
    Opt Express; 2015 Apr; 23(7):A337-45. PubMed ID: 25968799
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes.
    Nami M; Stricklin IE; DaVico KM; Mishkat-Ul-Masabih S; Rishinaramangalam AK; Brueck SRJ; Brener I; Feezell DF
    Sci Rep; 2018 Jan; 8(1):501. PubMed ID: 29323163
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Increase in the efficiency of III-nitride micro LEDs by atomic layer deposition.
    Lee TY; Huang YM; Chiang H; Chao CL; Hung CY; Kuo WH; Fang YH; Chu MT; Wu CI; Lin CC; Kuo HC
    Opt Express; 2022 May; 30(11):18552-18561. PubMed ID: 36221654
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 10.