These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

259 related articles for article (PubMed ID: 29845334)

  • 1. Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers.
    Chung JM; Zhang X; Shang F; Kim JH; Wang XL; Liu S; Yang B; Xiang Y
    Nanoscale Res Lett; 2018 May; 13(1):164. PubMed ID: 29845334
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Enhanced Reliability of a-IGZO TFTs with a Reduced Feature Size and a Clean Etch-Stopper Layer Structure.
    Chung JM; Wu F; Jeong SW; Kim JH; Xiang Y
    Nanoscale Res Lett; 2019 May; 14(1):165. PubMed ID: 31098841
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Intense Pulsed Light Annealing Process of Indium-Gallium-Zinc-Oxide Semiconductors via Flash White Light Combined with Deep-UV and Near-Infrared Drying for High-Performance Thin-Film Transistors.
    Moon CJ; Kim HS
    ACS Appl Mater Interfaces; 2019 Apr; 11(14):13380-13388. PubMed ID: 30882197
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Enhanced Electrical Properties and Stability in IGZO TFTs via Low-Temperature Activation with MgO
    Kim MS; Kim HT; Jung S; Kim YW; Lee S; Kim HJ
    ACS Appl Mater Interfaces; 2024 Aug; 16(31):41127-41133. PubMed ID: 39058501
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Influence of source and drain contacts on the properties of indium-gallium-zinc-oxide thin-film transistors based on amorphous carbon nanofilm as barrier layer.
    Luo D; Xu H; Zhao M; Li M; Xu M; Zou J; Tao H; Wang L; Peng J
    ACS Appl Mater Interfaces; 2015 Feb; 7(6):3633-40. PubMed ID: 25619280
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Investigation of the Capacitance-Voltage Electrical Characteristics of Thin-Film Transistors Caused by Hydrogen Diffusion under Negative Bias Stress in a Moist Environment.
    Chen HC; Kuo CW; Chang TC; Lai WC; Chen PH; Chen GF; Huang SP; Chen JJ; Zhou KJ; Shih CC; Tsao YC; Huang HC; Sze SM
    ACS Appl Mater Interfaces; 2019 Oct; 11(43):40196-40203. PubMed ID: 31573173
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Low-temperature fabrication of an HfO
    Hong S; Park SP; Kim YG; Kang BH; Na JW; Kim HJ
    Sci Rep; 2017 Nov; 7(1):16265. PubMed ID: 29176568
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.
    Xiao X; Zhang L; Shao Y; Zhou X; He H; Zhang S
    ACS Appl Mater Interfaces; 2018 Aug; 10(31):25850-25857. PubMed ID: 29235839
    [TBL] [Abstract][Full Text] [Related]  

  • 9. The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer.
    Shin Y; Kim ST; Kim K; Kim MY; Oh S; Jeong JK
    Sci Rep; 2017 Sep; 7(1):10885. PubMed ID: 28883475
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Multifunctional Oxygen Scavenger Layer for High-Performance Oxide Thin-Film Transistors with Low-Temperature Processing.
    Kim MS; Kim HT; Yoo H; Choi DH; Park JW; Kim TS; Lim JH; Kim HJ
    ACS Appl Mater Interfaces; 2021 Jul; 13(27):31816-31824. PubMed ID: 34180652
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y
    Jung H; Kim WH; Park BE; Woo WJ; Oh IK; Lee SJ; Kim YC; Myoung JM; Gatineau S; Dussarrat C; Kim H
    ACS Appl Mater Interfaces; 2018 Jan; 10(2):2143-2150. PubMed ID: 29277990
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Performance Enhancement of Channel-Engineered Al-Zn-Sn-O Thin-Film Transistors with Highly Conductive In-Ga-Zn-O Buried Layer via Vacuum Rapid Thermal Annealing.
    Kim SH; Cho WJ
    J Nanosci Nanotechnol; 2020 Aug; 20(8):4671-4677. PubMed ID: 32126639
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Silicon germanium photo-blocking layers for a-IGZO based industrial display.
    Kang SH; Kang S; Park SC; Park JB; Jung Y; Hong BH
    Sci Rep; 2018 Dec; 8(1):17533. PubMed ID: 30510247
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers.
    Zhang Y; Xie H; Dong C
    Micromachines (Basel); 2019 Nov; 10(11):. PubMed ID: 31739504
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Intense pulsed light annealing of solution-based indium-gallium-zinc-oxide semiconductors with printed Ag source and drain electrodes for bottom gate thin film transistors.
    Moon CJ; Park JW; Jang YR; Kim HS
    Sci Rep; 2024 Jan; 14(1):1566. PubMed ID: 38238447
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer.
    Shin KY; Tak YJ; Kim WG; Hong S; Kim HJ
    ACS Appl Mater Interfaces; 2017 Apr; 9(15):13278-13285. PubMed ID: 28299924
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO₂ Gate Dielectrics by CF₄ Plasma Treatment.
    Fan CL; Tseng FP; Tseng CY
    Materials (Basel); 2018 May; 11(5):. PubMed ID: 29772767
    [TBL] [Abstract][Full Text] [Related]  

  • 18. The effect of annealing ambient on the characteristics of an indium-gallium-zinc oxide thin film transistor.
    Park S; Bang S; Lee S; Park J; Ko Y; Jeon H
    J Nanosci Nanotechnol; 2011 Jul; 11(7):6029-33. PubMed ID: 22121652
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Performance Improvement of In-Ga-Zn Oxide Thin-Film Transistors by Excimer Laser Annealing.
    Zhang X; Li Y; Li Y; Xie X; Yin L
    Micromachines (Basel); 2024 Jan; 15(2):. PubMed ID: 38398954
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Significant Performance and Stability Improvements of Low-Temperature IGZO TFTs by the Formation of In-F Nanoparticles on an SiO
    Jeong HY; Nam SH; Park KS; Yoon SY; Park C; Jang J
    Nanomaterials (Basel); 2020 Jun; 10(6):. PubMed ID: 32549245
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 13.