These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

181 related articles for article (PubMed ID: 29849038)

  • 1. Determination of strain relaxation in InGaN/GaN nanowalls from quantum confinement and exciton binding energy dependent photoluminescence peak.
    Sankaranarayanan S; Chouksey S; Saha P; Pendem V; Udai A; Aggarwal T; Ganguly S; Saha D
    Sci Rep; 2018 May; 8(1):8404. PubMed ID: 29849038
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Strong Size Dependency on the Carrier and Photon Dynamics in InGaN/GaN Single Nanowalls Determined Using Photoluminescence and Ultrafast Transient Absorption Spectroscopy.
    Chouksey S; Sankaranarayanan S; Pendem V; Saha PK; Ganguly S; Saha D
    Nano Lett; 2017 Aug; 17(8):4596-4603. PubMed ID: 28735539
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Theoretical modelling of exciton binding energy, steady-state and transient optical response of GaN/InGaN/GaN and AlGaN/GaN/AlGaN core-shell nanostructures.
    Pendem V; Udai A; Aggarwal T; Ganguly S; Saha D
    Nanotechnology; 2019 Jul; 30(27):274002. PubMed ID: 30893662
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Highly polarized photoluminescence from c-plane InGaN/GaN multiple quantum wells on stripe-shaped cavity-engineered sapphire substrate.
    Kim J; Lee S; Oh J; Ryu J; Park Y; Park SH; Yoon E
    Sci Rep; 2019 Jun; 9(1):8282. PubMed ID: 31164674
    [TBL] [Abstract][Full Text] [Related]  

  • 5. High-Resolution Mapping of Strain Partitioning and Relaxation in InGaN/GaN Nanowire Heterostructures.
    Park B; Lee JK; Koch CT; Wölz M; Geelhaar L; Oh SH
    Adv Sci (Weinh); 2022 Aug; 9(22):e2200323. PubMed ID: 35665488
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Effect of strain relaxation in InGaN/GaN multi-quantum wells with self-assembled Pt nanoclusters.
    Park AH; Oh TS; Seo TH; Lee SB; Lee GH; Suh EK
    J Nanosci Nanotechnol; 2014 Nov; 14(11):8347-51. PubMed ID: 25958526
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Enhanced luminescence from InGaN/GaN nano-disk in a wire array caused by surface potential modulation during wet treatment.
    Saha PK; Pendem V; Chouksey S; Udai A; Aggarwal T; Ganguly S; Saha D
    Nanotechnology; 2019 Mar; 30(10):104001. PubMed ID: 30557860
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Strain relaxation of InGaN/GaN multi-quantum well light emitters via nanopatterning.
    Ley R; Chan L; Shapturenka P; Wong M; DenBaars S; Gordon M
    Opt Express; 2019 Oct; 27(21):30081-30089. PubMed ID: 31684261
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Quantum Confinement of Hybrid Charge Transfer Excitons in GaN/InGaN/Organic Semiconductor Quantum Wells.
    Panda A; Forrest SR
    Nano Lett; 2017 Dec; 17(12):7853-7858. PubMed ID: 29178809
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Polarization characteristics of semipolar (112̄2) InGaN/GaN quantum well structures grown on relaxed InGaN buffer layers and comparison with experiment.
    Park SH; Mishra D; Eugene Pak Y; Kang K; Park CY; Yoo SH; Cho YH; Shim MB; Kim S
    Opt Express; 2014 Jun; 22(12):14850-8. PubMed ID: 24977580
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays.
    Huang YY; Chen LY; Chang CH; Sun YH; Cheng YW; Ke MY; Lu YH; Kuo HC; Huang J
    Nanotechnology; 2011 Jan; 22(4):045202. PubMed ID: 21157011
    [TBL] [Abstract][Full Text] [Related]  

  • 12. A PN-type quantum barrier for InGaN/GaN light emitting diodes.
    Zhang ZH; Tan ST; Ji Y; Liu W; Ju Z; Kyaw Z; Sun XW; Demir HV
    Opt Express; 2013 Jul; 21(13):15676-85. PubMed ID: 23842353
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Free charges versus excitons: photoluminescence investigation of InGaN/GaN multiple quantum well nanorods and their planar counterparts.
    Chen W; Wen X; Yang J; Latzel M; Patterson R; Huang S; Shrestha S; Jia B; Moss DJ; Christiansen S; Conibeer G
    Nanoscale; 2018 Mar; 10(11):5358-5365. PubMed ID: 29509196
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Electron Holographic Study of Semiconductor Light-Emitting Diodes.
    Li L; Hu X; Gao Y
    Small; 2018 Feb; 14(6):. PubMed ID: 29205817
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Interplay of strain and indium incorporation in InGaN/GaN dot-in-a-wire nanostructures by scanning transmission electron microscopy.
    Woo SY; Gauquelin N; Nguyen HP; Mi Z; Botton GA
    Nanotechnology; 2015 Aug; 26(34):344002. PubMed ID: 26234582
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Multicolour luminescence from InGaN quantum wells grown over GaN nanowire arrays by molecular-beam epitaxy.
    Armitage R; Tsubaki K
    Nanotechnology; 2010 May; 21(19):195202. PubMed ID: 20400823
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Zero-internal fields in nonpolar InGaN/GaN multi-quantum wells grown by the multi-buffer layer technique.
    Song H; Kim JS; Kim EK; Seo YG; Hwang SM
    Nanotechnology; 2010 Apr; 21(13):134026. PubMed ID: 20208099
    [TBL] [Abstract][Full Text] [Related]  

  • 18. InGaN light emitting diodes with a laser-treated tapered GaN structure.
    Huang WC; Lin CF; Hsieh TH; Chen SH; Lin MS; Chen KT; Lin CM; Chen SH; Han P
    Opt Express; 2011 Sep; 19 Suppl 5():A1126-34. PubMed ID: 21935255
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Efficiency enhancement mechanism of piezoelectric effect in long wavelength InGaN-based LED.
    Liu L; Feng Q; Zhang Y; Zhu X; Chen L; Xiong Z
    Phys Chem Chem Phys; 2023 Oct; 25(40):27774-27782. PubMed ID: 37814799
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes.
    Son JH; Lee JL
    Opt Express; 2010 Mar; 18(6):5466-71. PubMed ID: 20389563
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 10.