These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
120 related articles for article (PubMed ID: 29893398)
21. Controlled Layer-by-Layer Etching of MoS₂. Lin T; Kang B; Jeon M; Huffman C; Jeon J; Lee S; Han W; Lee J; Lee S; Yeom G; Kim K ACS Appl Mater Interfaces; 2015 Jul; 7(29):15892-7. PubMed ID: 26091282 [TBL] [Abstract][Full Text] [Related]
22. Catalytic C Young BT; Pathan MAK; Jiang T; Le D; Marrow N; Nguyen T; Jordan CE; Rahman TS; Popolan-Vaida DM; Vaida ME J Chem Phys; 2020 Feb; 152(7):074706. PubMed ID: 32087629 [TBL] [Abstract][Full Text] [Related]
23. Surface Defect Engineering of MoS Kropp JA; Sharma A; Zhu W; Ataca C; Gougousi T ACS Appl Mater Interfaces; 2020 Oct; 12(42):48150-48160. PubMed ID: 32970942 [TBL] [Abstract][Full Text] [Related]
24. Reaction mechanism of atomic layer deposition of aluminum sulfide using trimethylaluminum and hydrogen sulfide. Yu Y; Zhou Z; Xu L; Ding Y; Fang G Phys Chem Chem Phys; 2021 Apr; 23(15):9594-9603. PubMed ID: 33885104 [TBL] [Abstract][Full Text] [Related]
25. Rapid atomic layer deposition of silica nanolaminates: synergistic catalysis of Lewis/Brønsted acid sites and interfacial interactions. Fang G; Ma J Nanoscale; 2013 Dec; 5(23):11856-69. PubMed ID: 24126605 [TBL] [Abstract][Full Text] [Related]
26. Bimolecular Reaction Mechanism in the Amido Complex-Based Atomic Layer Deposition of HfO D'Acunto G; Tsyshevsky R; Shayesteh P; Gallet JJ; Bournel F; Rochet F; Pinsard I; Timm R; Head AR; Kuklja M; Schnadt J Chem Mater; 2023 Jan; 35(2):529-538. PubMed ID: 36711051 [TBL] [Abstract][Full Text] [Related]
27. Atomic layer deposition of TiO2 from TiI4 and H2O onto SiO2 surfaces: ab initio calculations of the initial reaction mechanisms. Hu Z; Turner CH J Am Chem Soc; 2007 Apr; 129(13):3863-78. PubMed ID: 17346043 [TBL] [Abstract][Full Text] [Related]
28. Reaction mechanism of nickel sulfide atomic layer deposition using bis( Zhang X; Zhou Z; Xu R; Guo J; Xu L; Ding Y; Xiao H; Li X; Li A; Fang G Phys Chem Chem Phys; 2023 May; 25(19):13465-13473. PubMed ID: 37132216 [TBL] [Abstract][Full Text] [Related]
29. Atomic Layer Deposition of Zinc Oxide: Study on the Water Pulse Reactions from First-Principles. Weckman T; Laasonen K J Phys Chem C Nanomater Interfaces; 2018 Apr; 122(14):7685-7694. PubMed ID: 30405869 [TBL] [Abstract][Full Text] [Related]
30. Defect-Seeded Atomic Layer Deposition of Metal Oxides on the Basal Plane of 2D Layered Materials. Mazza MF; Cabán-Acevedo M; Wiensch JD; Thompson AC; Lewis NS Nano Lett; 2020 Apr; 20(4):2632-2638. PubMed ID: 32208708 [TBL] [Abstract][Full Text] [Related]
31. Density functional theory predictions of the composition of atomic layer deposition-grown ternary oxides. Murray C; Elliott SD ACS Appl Mater Interfaces; 2013 May; 5(9):3704-15. PubMed ID: 23544705 [TBL] [Abstract][Full Text] [Related]
32. HfO(2) on MoS(2) by atomic layer deposition: adsorption mechanisms and thickness scalability. McDonnell S; Brennan B; Azcatl A; Lu N; Dong H; Buie C; Kim J; Hinkle CL; Kim MJ; Wallace RM ACS Nano; 2013 Nov; 7(11):10354-61. PubMed ID: 24116949 [TBL] [Abstract][Full Text] [Related]
33. Charge-transfer-based gas sensing using atomic-layer MoS2. Cho B; Hahm MG; Choi M; Yoon J; Kim AR; Lee YJ; Park SG; Kwon JD; Kim CS; Song M; Jeong Y; Nam KS; Lee S; Yoo TJ; Kang CG; Lee BH; Ko HC; Ajayan PM; Kim DH Sci Rep; 2015 Jan; 5():8052. PubMed ID: 25623472 [TBL] [Abstract][Full Text] [Related]
34. Improved growth behavior of atomic-layer-deposited high-k dielectrics on multilayer MoS2 by oxygen plasma pretreatment. Yang J; Kim S; Choi W; Park SH; Jung Y; Cho MH; Kim H ACS Appl Mater Interfaces; 2013 Jun; 5(11):4739-44. PubMed ID: 23683268 [TBL] [Abstract][Full Text] [Related]
35. Incomplete elimination of precursor ligands during atomic layer deposition of zinc-oxide, tin-oxide, and zinc-tin-oxide. Mackus AJ; MacIsaac C; Kim WH; Bent SF J Chem Phys; 2017 Feb; 146(5):052802. PubMed ID: 28178803 [TBL] [Abstract][Full Text] [Related]
37. Understanding inherent substrate selectivity during atomic layer deposition: Effect of surface preparation, hydroxyl density, and metal oxide composition on nucleation mechanisms during tungsten ALD. Lemaire PC; King M; Parsons GN J Chem Phys; 2017 Feb; 146(5):052811. PubMed ID: 28178812 [TBL] [Abstract][Full Text] [Related]
38. Atomistic reaction mechanism of CVD grown MoS Arafat A; Islam MS; Ferdous N; Islam ASMJ; Sarkar MMH; Stampfl C; Park J Sci Rep; 2022 Sep; 12(1):16085. PubMed ID: 36167969 [TBL] [Abstract][Full Text] [Related]
39. High turnover frequency of hydrogen evolution reaction on amorphous MoS2 thin film directly grown by atomic layer deposition. Shin S; Jin Z; Kwon DH; Bose R; Min YS Langmuir; 2015 Jan; 31(3):1196-202. PubMed ID: 25547664 [TBL] [Abstract][Full Text] [Related]
40. Adsorption Behavior of the Hydroxyl Radical and Its Effects on Monolayer MoS Zhang W; Zou G; Choi JH ACS Omega; 2020 Feb; 5(4):1982-1986. PubMed ID: 32039335 [TBL] [Abstract][Full Text] [Related] [Previous] [Next] [New Search]