These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

153 related articles for article (PubMed ID: 29927605)

  • 1. High-Field Transport and Velocity Saturation in Synthetic Monolayer MoS
    Smithe KKH; English CD; Suryavanshi SV; Pop E
    Nano Lett; 2018 Jul; 18(7):4516-4522. PubMed ID: 29927605
    [TBL] [Abstract][Full Text] [Related]  

  • 2. High Current Density in Monolayer MoS
    McClellan CJ; Yalon E; Smithe KKH; Suryavanshi SV; Pop E
    ACS Nano; 2021 Jan; 15(1):1587-1596. PubMed ID: 33405894
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Impact of Contact on the Operation and Performance of Back-Gated Monolayer MoS2 Field-Effect-Transistors.
    Liu W; Sarkar D; Kang J; Cao W; Banerjee K
    ACS Nano; 2015 Aug; 9(8):7904-12. PubMed ID: 26039221
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films.
    Liu H; Si M; Najmaei S; Neal AT; Du Y; Ajayan PM; Lou J; Ye PD
    Nano Lett; 2013 Jun; 13(6):2640-6. PubMed ID: 23679044
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Energy Dissipation in Monolayer MoS
    Yalon E; McClellan CJ; Smithe KKH; Muñoz Rojo M; Xu RL; Suryavanshi SV; Gabourie AJ; Neumann CM; Xiong F; Farimani AB; Pop E
    Nano Lett; 2017 Jun; 17(6):3429-3433. PubMed ID: 28388845
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Approaching Ohmic Contacts for Ideal Monolayer MoS
    Xiao J; Chen K; Zhang X; Liu X; Yu H; Gao L; Hong M; Gu L; Zhang Z; Zhang Y
    Small Methods; 2023 Nov; 7(11):e2300611. PubMed ID: 37551044
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors: From Variable-Range Hopping to Velocity Saturation.
    He G; Ghosh K; Singisetti U; Ramamoorthy H; Somphonsane R; Bohra G; Matsunaga M; Higuchi A; Aoki N; Najmaei S; Gong Y; Zhang X; Vajtai R; Ajayan PM; Bird JP
    Nano Lett; 2015 Aug; 15(8):5052-8. PubMed ID: 26121164
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Additive manufacturing of patterned 2D semiconductor through recyclable masked growth.
    Guo Y; Shen PC; Su C; Lu AY; Hempel M; Han Y; Ji Q; Lin Y; Shi E; McVay E; Dou L; Muller DA; Palacios T; Li J; Ling X; Kong J
    Proc Natl Acad Sci U S A; 2019 Feb; 116(9):3437-3442. PubMed ID: 30755527
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Single-layer MoS2 electronics.
    Lembke D; Bertolazzi S; Kis A
    Acc Chem Res; 2015 Jan; 48(1):100-10. PubMed ID: 25555202
    [TBL] [Abstract][Full Text] [Related]  

  • 10. High-Performance CVD Bilayer MoS
    Gao Q; Zhang C; Yang K; Pan X; Zhang Z; Yang J; Yi Z; Chi F; Liu L
    Micromachines (Basel); 2021 Apr; 12(4):. PubMed ID: 33923705
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Probing the Field-Effect Transistor with Monolayer MoS
    Han T; Liu H; Wang S; Chen S; Xie H; Yang K
    Nanomaterials (Basel); 2019 Aug; 9(9):. PubMed ID: 31462000
    [TBL] [Abstract][Full Text] [Related]  

  • 12. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity.
    Kang K; Xie S; Huang L; Han Y; Huang PY; Mak KF; Kim CJ; Muller D; Park J
    Nature; 2015 Apr; 520(7549):656-60. PubMed ID: 25925478
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Short channel monolayer MoS
    Bi K; Liu H; Chen Y; Luo F; Shu Z; Lin J; Liu S; Liu H; Zeng Z; Dai P; Zhu M; Duan H
    Nanotechnology; 2019 Jul; 30(29):295301. PubMed ID: 30917350
    [TBL] [Abstract][Full Text] [Related]  

  • 14. High-performance chemical sensing using Schottky-contacted chemical vapor deposition grown monolayer MoS2 transistors.
    Liu B; Chen L; Liu G; Abbas AN; Fathi M; Zhou C
    ACS Nano; 2014 May; 8(5):5304-14. PubMed ID: 24749814
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS
    Tang A; Kumar A; Jaikissoon M; Saraswat K; Wong HP; Pop E
    ACS Appl Mater Interfaces; 2021 Sep; 13(35):41866-41874. PubMed ID: 34427445
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Hidden Vacancy Benefit in Monolayer 2D Semiconductors.
    Zhang X; Liao Q; Kang Z; Liu B; Liu X; Ou Y; Xiao J; Du J; Liu Y; Gao L; Gu L; Hong M; Yu H; Zhang Z; Duan X; Zhang Y
    Adv Mater; 2021 Feb; 33(7):e2007051. PubMed ID: 33448081
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Large-Velocity Saturation in Thin-Film Black Phosphorus Transistors.
    Chen X; Chen C; Levi A; Houben L; Deng B; Yuan S; Ma C; Watanabe K; Taniguchi T; Naveh D; Du X; Xia F
    ACS Nano; 2018 May; 12(5):5003-5010. PubMed ID: 29714472
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Remarkable quality improvement of as-grown monolayer MoS
    Yang P; Shan Y; Chen J; Ekoya G; Han J; Qiu ZJ; Sun J; Chen F; Wang H; Bao W; Hu L; Zhang RJ; Liu R; Cong C
    Nanoscale; 2020 Jan; 12(3):1958-1966. PubMed ID: 31909408
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Benchmarking monolayer MoS
    Sebastian A; Pendurthi R; Choudhury TH; Redwing JM; Das S
    Nat Commun; 2021 Jan; 12(1):693. PubMed ID: 33514710
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Layer-by-layer epitaxy of multi-layer MoS
    Wang Q; Tang J; Li X; Tian J; Liang J; Li N; Ji D; Xian L; Guo Y; Li L; Zhang Q; Chu Y; Wei Z; Zhao Y; Du L; Yu H; Bai X; Gu L; Liu K; Yang W; Yang R; Shi D; Zhang G
    Natl Sci Rev; 2022 Jun; 9(6):nwac077. PubMed ID: 35769232
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.