These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

105 related articles for article (PubMed ID: 29988025)

  • 1. Resistive switching control for conductive Si-nanocrystals embedded in Si/SiO
    González-Flores KE; Palacios-Márquez B; Álvarez-Quintana J; Pérez-García SA; Licea-Jiménez L; Horley P; Morales-Sánchez A
    Nanotechnology; 2018 Sep; 29(39):395203. PubMed ID: 29988025
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Semiempirical Two-Dimensional Model of the Bipolar Resistive Switching Process in Si-NCs/SiO
    Ramirez-Rios J; González-Flores KE; Avilés-Bravo JJ; Pérez-García SA; Flores-Méndez J; Moreno-Moreno M; Morales-Sánchez A
    Nanomaterials (Basel); 2023 Jul; 13(14):. PubMed ID: 37513134
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Digital and Analog Resistive Switching Behavior in Si-NCs Embedded in a Si/SiO
    Morales-Sánchez A; González-Flores KE; Pérez-García SA; González-Torres S; Garrido-Fernández B; Hernández-Martínez L; Moreno-Moreno M
    Nanomaterials (Basel); 2023 Mar; 13(6):. PubMed ID: 36985880
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPt
    Wang LG; Cao ZY; Qian X; Zhu L; Cui DP; Li AD; Wu D
    ACS Appl Mater Interfaces; 2017 Feb; 9(7):6634-6643. PubMed ID: 28139921
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Resistive switching of organic-inorganic hybrid devices of conductive polymer and permeable ultra-thin SiO
    Yamamoto S; Kitanaka T; Miyashita T; Mitsuishi M
    Nanotechnology; 2018 Jun; 29(26):26LT02. PubMed ID: 29708100
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO2 Multilayers.
    Qian M; Shan D; Ji Y; Li D; Xu J; Li W; Chen K
    Nanoscale Res Lett; 2016 Dec; 11(1):346. PubMed ID: 27460594
    [TBL] [Abstract][Full Text] [Related]  

  • 7. An efficient Si light-emitting diode based on an n- ZnO/SiO2-Si nanocrystals-SiO2/p-Si heterostructure.
    Sun E; Su FH; Shih YT; Tsai HL; Chen CH; Wu MK; Yang JR; Chen MJ
    Nanotechnology; 2009 Nov; 20(44):445202. PubMed ID: 19801782
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Controlling resistive switching behavior in the solution processed SiO
    Kwon S; Kim MJ; Lim DH; Jeong K; Chung KB
    Sci Rep; 2022 May; 12(1):8405. PubMed ID: 35589798
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Voltage-polarity dependent multi-mode resistive switching on sputtered MgO nanostructures.
    Dias C; Guerra LM; Bordalo BD; Lv H; Ferraria AM; Botelho do Rego AM; Cardoso S; Freitas PP; Ventura J
    Phys Chem Chem Phys; 2017 May; 19(17):10898-10904. PubMed ID: 28401238
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Bias-polarity-dependent resistance switching in W/SiO2/Pt and W/SiO2/Si/Pt structures.
    Jiang H; Li XY; Chen R; Shao XL; Yoon JH; Hu X; Hwang CS; Zhao J
    Sci Rep; 2016 Feb; 6():22216. PubMed ID: 26916050
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Phosphorus Doping in Si Nanocrystals/SiO2 multilayers and Light Emission with Wavelength compatible for Optical Telecommunication.
    Lu P; Mu W; Xu J; Zhang X; Zhang W; Li W; Xu L; Chen K
    Sci Rep; 2016 Mar; 6():22888. PubMed ID: 26956425
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Memory effect by carrier trapping into V3Si nanocrystals among SiO2 layers on multi-layered graphene layer.
    Lee DU; Kim D; Lee KS; Kim EK
    J Nanosci Nanotechnol; 2014 Nov; 14(11):8654-8. PubMed ID: 25958579
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Presetting conductive pathway induced the switching uniformity evolution of a-SiN
    Sun Y; Ma Z; Jiang X; Tan D; Zhang H; Zhang X; Liu J; Yang H; Li W; Xu L; Chen K; Feng D
    Nanotechnology; 2018 Oct; 29(41):415701. PubMed ID: 30004387
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Design of Electrodeposited Bilayer Structures for Reliable Resistive Switching with Self-Compliance.
    Kim MK; Lee JS
    ACS Appl Mater Interfaces; 2016 Dec; 8(48):32918-32924. PubMed ID: 27934194
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Exchange bias coupling and bipolar resistive switching at room temperature on GaSb/Mn multilayers for resistive memories applications.
    Calderón JA; Quiroz HP; Terán CL; Manso-Silván M; Dussan A; Muñoz Noval Á
    Sci Rep; 2023 Jan; 13(1):722. PubMed ID: 36639693
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Full Electric Control of Exchange Bias at Room Temperature by Resistive Switching.
    Wei L; Hu Z; Du G; Yuan Y; Wang J; Tu H; You B; Zhou S; Qu J; Liu H; Zheng R; Hu Y; Du J
    Adv Mater; 2018 Jul; 30(30):e1801885. PubMed ID: 29892982
    [TBL] [Abstract][Full Text] [Related]  

  • 17. GeSn/SiO
    Slav A; Dascalescu I; Lepadatu AM; Palade C; Zoita NC; Stroescu H; Iftimie S; Lazanu S; Gartner M; Buca D; Teodorescu VS; Ciurea ML; Braic M; Stoica T
    ACS Appl Mater Interfaces; 2020 Dec; 12(50):56161-56171. PubMed ID: 33275429
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Enhancement of electroluminescence from embedded Si quantum dots/SiO2multilayers film by localized-surface-plasmon and surface roughening.
    Li W; Wang S; Hu M; He S; Ge P; Wang J; Guo YY; Zhaowei L
    Sci Rep; 2015 Jul; 5():11881. PubMed ID: 26138830
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Tunable electroluminescence in planar graphene/SiO(2) memristors.
    He C; Li J; Wu X; Chen P; Zhao J; Yin K; Cheng M; Yang W; Xie G; Wang D; Liu D; Yang R; Shi D; Li Z; Sun L; Zhang G
    Adv Mater; 2013 Oct; 25(39):5593-8. PubMed ID: 23922289
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Unipolar resistive switching and tunneling oscillations in isolated Si-SiO
    Ghanta U; Ray M; Bandyopadhyay NR; Hossain SM
    Nanotechnology; 2016 Nov; 27(45):455702. PubMed ID: 27694697
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 6.