238 related articles for article (PubMed ID: 30012622)
1. Electrometry by optical charge conversion of deep defects in 4H-SiC.
Wolfowicz G; Whiteley SJ; Awschalom DD
Proc Natl Acad Sci U S A; 2018 Jul; 115(31):7879-7883. PubMed ID: 30012622
[TBL] [Abstract][Full Text] [Related]
2. Optical charge state control of spin defects in 4H-SiC.
Wolfowicz G; Anderson CP; Yeats AL; Whiteley SJ; Niklas J; Poluektov OG; Heremans FJ; Awschalom DD
Nat Commun; 2017 Nov; 8(1):1876. PubMed ID: 29192288
[TBL] [Abstract][Full Text] [Related]
3. All-optical coherent population trapping with defect spin ensembles in silicon carbide.
Zwier OV; O'Shea D; Onur AR; van der Wal CH
Sci Rep; 2015 Jun; 5():10931. PubMed ID: 26047132
[TBL] [Abstract][Full Text] [Related]
4. Enhanced cavity coupling to silicon vacancies in 4H silicon carbide using laser irradiation and thermal annealing.
Gadalla MN; Greenspon AS; Defo RK; Zhang X; Hu EL
Proc Natl Acad Sci U S A; 2021 Mar; 118(12):. PubMed ID: 33731479
[TBL] [Abstract][Full Text] [Related]
5. Electrically and mechanically tunable electron spins in silicon carbide color centers.
Falk AL; Klimov PV; Buckley BB; Ivády V; Abrikosov IA; Calusine G; Koehl WF; Gali A; Awschalom DD
Phys Rev Lett; 2014 May; 112(18):187601. PubMed ID: 24856721
[TBL] [Abstract][Full Text] [Related]
6. Coherent control of single spins in silicon carbide at room temperature.
Widmann M; Lee SY; Rendler T; Son NT; Fedder H; Paik S; Yang LP; Zhao N; Yang S; Booker I; Denisenko A; Jamali M; Momenzadeh SA; Gerhardt I; Ohshima T; Gali A; Janzén E; Wrachtrup J
Nat Mater; 2015 Feb; 14(2):164-8. PubMed ID: 25437256
[TBL] [Abstract][Full Text] [Related]
7. Room temperature coherent spin alignment of silicon vacancies in 4H- and 6H-SiC.
Soltamov VA; Soltamova AA; Baranov PG; Proskuryakov II
Phys Rev Lett; 2012 Jun; 108(22):226402. PubMed ID: 23003631
[TBL] [Abstract][Full Text] [Related]
8. Fast optoelectronic charge state conversion of silicon vacancies in diamond.
Rieger M; Villafañe V; Todenhagen LM; Matthies S; Appel S; Brandt MS; Müller K; Finley JJ
Sci Adv; 2024 Feb; 10(8):eadl4265. PubMed ID: 38381816
[TBL] [Abstract][Full Text] [Related]
9. Room temperature coherent control of defect spin qubits in silicon carbide.
Koehl WF; Buckley BB; Heremans FJ; Calusine G; Awschalom DD
Nature; 2011 Nov; 479(7371):84-7. PubMed ID: 22051676
[TBL] [Abstract][Full Text] [Related]
10. Quantum systems in silicon carbide for sensing applications.
Castelletto S; Lew CT; Lin WX; Xu JS
Rep Prog Phys; 2023 Dec; 87(1):. PubMed ID: 38029424
[TBL] [Abstract][Full Text] [Related]
11. Polytype control of spin qubits in silicon carbide.
Falk AL; Buckley BB; Calusine G; Koehl WF; Dobrovitski VV; Politi A; Zorman CA; Feng PX; Awschalom DD
Nat Commun; 2013; 4():1819. PubMed ID: 23652007
[TBL] [Abstract][Full Text] [Related]
12. Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H-SiC.
Igumbor E; Olaniyan O; Mapasha RE; Danga HT; Omotoso E; Meyer WE
J Phys Condens Matter; 2018 May; 30(18):185702. PubMed ID: 29557790
[TBL] [Abstract][Full Text] [Related]
13. Arrays of Si vacancies in 4H-SiC produced by focused Li ion beam implantation.
Pavunny SP; Yeats AL; Banks HB; Bielejec E; Myers-Ward RL; DeJarld MT; Bracker AS; Gaskill DK; Carter SG
Sci Rep; 2021 Feb; 11(1):3561. PubMed ID: 33574463
[TBL] [Abstract][Full Text] [Related]
14. Optical switching of defect charge states in 4H-SiC.
Golter DA; Lai CW
Sci Rep; 2017 Oct; 7(1):13406. PubMed ID: 29042675
[TBL] [Abstract][Full Text] [Related]
15. Fabrication of High-Q Nanobeam Photonic Crystals in Epitaxially Grown 4H-SiC.
Bracher DO; Hu EL
Nano Lett; 2015 Sep; 15(9):6202-7. PubMed ID: 26305122
[TBL] [Abstract][Full Text] [Related]
16. 4H-Silicon Carbide as an Acoustic Material for MEMS.
Long Y; Liu Z; Ayazi F
IEEE Trans Ultrason Ferroelectr Freq Control; 2023 Oct; 70(10):1189-1200. PubMed ID: 37276110
[TBL] [Abstract][Full Text] [Related]
17. Room-temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast.
Li Q; Wang JF; Yan FF; Zhou JY; Wang HF; Liu H; Guo LP; Zhou X; Gali A; Liu ZH; Wang ZQ; Sun K; Guo GP; Tang JS; Li H; You LX; Xu JS; Li CF; Guo GC
Natl Sci Rev; 2022 May; 9(5):nwab122. PubMed ID: 35668749
[TBL] [Abstract][Full Text] [Related]
18. Engineering Electron-Phonon Coupling of Quantum Defects to a Semiconfocal Acoustic Resonator.
Chen H; Opondo NF; Jiang B; MacQuarrie ER; Daveau RS; Bhave SA; Fuchs GD
Nano Lett; 2019 Oct; 19(10):7021-7027. PubMed ID: 31498998
[TBL] [Abstract][Full Text] [Related]
19. Nanoscale depth control of implanted shallow silicon vacancies in silicon carbide.
Li Q; Wang JF; Yan FF; Cheng ZD; Liu ZH; Zhou K; Guo LP; Zhou X; Zhang WP; Wang XX; Huang W; Xu JS; Li CF; Guo GC
Nanoscale; 2019 Nov; 11(43):20554-20561. PubMed ID: 31432857
[TBL] [Abstract][Full Text] [Related]
20. Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions.
Niethammer M; Widmann M; Rendler T; Morioka N; Chen YC; Stöhr R; Hassan JU; Onoda S; Ohshima T; Lee SY; Mukherjee A; Isoya J; Son NT; Wrachtrup J
Nat Commun; 2019 Dec; 10(1):5569. PubMed ID: 31804489
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]