246 related articles for article (PubMed ID: 30022188)
1. Influence of interface inhomogeneity on the electrical transport mechanism of CdSe nanowire/Au Schottky junctions.
Jin W; Mu X; Zhang K; Shang Z; Dai L
Phys Chem Chem Phys; 2018 Aug; 20(30):19932-19937. PubMed ID: 30022188
[TBL] [Abstract][Full Text] [Related]
2. The determination of modified barrier heights in Ti/GaN nano-Schottky diodes at high temperature.
Lee SY; Kim TH; Chol NK; Seong HK; Choi HJ; Ahn BG; Lee SK
J Nanosci Nanotechnol; 2008 Oct; 8(10):5042-6. PubMed ID: 19198387
[TBL] [Abstract][Full Text] [Related]
3. Nonvolatile multibit Schottky memory based on single n-type Ga doped CdSe nanowires.
Wu D; Jiang Y; Yu Y; Zhang Y; Li G; Zhu Z; Wu C; Wang L; Luo L; Jie J
Nanotechnology; 2012 Dec; 23(48):485203. PubMed ID: 23138192
[TBL] [Abstract][Full Text] [Related]
4. Junction-Structure-Dependent Schottky Barrier Inhomogeneity and Device Ideality of Monolayer MoS
Moon BH; Han GH; Kim H; Choi H; Bae JJ; Kim J; Jin Y; Jeong HY; Joo MK; Lee YH; Lim SC
ACS Appl Mater Interfaces; 2017 Mar; 9(12):11240-11246. PubMed ID: 28266221
[TBL] [Abstract][Full Text] [Related]
5. Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions.
Tomer D; Rajput S; Hudy LJ; Li CH; Li L
Nanotechnology; 2015 May; 26(21):215702. PubMed ID: 25930976
[TBL] [Abstract][Full Text] [Related]
6. Stability of Schottky and Ohmic Au Nanocatalysts to ZnO Nanowires.
Lord AM; Ramasse QM; Kepaptsoglou DM; Periwal P; Ross FM; Wilks SP
Nano Lett; 2017 Nov; 17(11):6626-6636. PubMed ID: 29024594
[TBL] [Abstract][Full Text] [Related]
7. Schottky barrier and contact resistance of InSb nanowire field-effect transistors.
Fan D; Kang N; Ghalamestani SG; Dick KA; Xu HQ
Nanotechnology; 2016 Jul; 27(27):275204. PubMed ID: 27232588
[TBL] [Abstract][Full Text] [Related]
8. High-performance single CdS nanowire (nanobelt) Schottky junction solar cells with Au/graphene Schottky electrodes.
Ye Y; Dai Y; Dai L; Shi Z; Liu N; Wang F; Fu L; Peng R; Wen X; Chen Z; Liu Z; Qin G
ACS Appl Mater Interfaces; 2010 Dec; 2(12):3406-10. PubMed ID: 21058686
[TBL] [Abstract][Full Text] [Related]
9. Schottky nanocontact of one-dimensional semiconductor nanostructures probed by using conductive atomic force microscopy.
Lee JA; Lim YR; Jung CS; Choi JH; Im HS; Park K; Park J; Kim GT
Nanotechnology; 2016 Oct; 27(42):425711. PubMed ID: 27640642
[TBL] [Abstract][Full Text] [Related]
10. Electrical transport of bottom-up grown single-crystal Si(1-x)Ge(x) nanowire.
Yang WF; Lee SJ; Liang GC; Whang SJ; Kwong DL
Nanotechnology; 2008 Jun; 19(22):225203. PubMed ID: 21825755
[TBL] [Abstract][Full Text] [Related]
11. Schottky barrier inhomogeneities at the interface of different epitaxial layer thicknesses of
Al-Ahmadi NA
Heliyon; 2020 Sep; 6(9):e04852. PubMed ID: 32995595
[TBL] [Abstract][Full Text] [Related]
12. Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient.
Barreda JL; Keiper TD; Zhang M; Xiong P
ACS Appl Mater Interfaces; 2017 Apr; 9(13):12046-12053. PubMed ID: 28274114
[TBL] [Abstract][Full Text] [Related]
13. Temperature-dependent Schottky barrier in high-performance organic solar cells.
Li H; He D; Zhou Q; Mao P; Cao J; Ding L; Wang J
Sci Rep; 2017 Jan; 7():40134. PubMed ID: 28071700
[TBL] [Abstract][Full Text] [Related]
14. Schottky Barriers in Bilayer Phosphorene Transistors.
Pan Y; Dan Y; Wang Y; Ye M; Zhang H; Quhe R; Zhang X; Li J; Guo W; Yang L; Lu J
ACS Appl Mater Interfaces; 2017 Apr; 9(14):12694-12705. PubMed ID: 28322554
[TBL] [Abstract][Full Text] [Related]
15. Quantifying the barrier lowering of ZnO Schottky nanodevices under UV light.
Lu MY; Lu MP; You SJ; Chen CW; Wang YJ
Sci Rep; 2015 Oct; 5():15123. PubMed ID: 26456370
[TBL] [Abstract][Full Text] [Related]
16. Electrical characterization of n/p-type nickel silicide/silicon junctions by Sb segregation.
Jun M; Park Y; Hyun Y; Choi SJ; Zyung T; Jang M
J Nanosci Nanotechnol; 2011 Aug; 11(8):7339-42. PubMed ID: 22103191
[TBL] [Abstract][Full Text] [Related]
17. Electrical Transport Properties of Au Nanoparticles and Thin Films on Ge Probed Using a Conducting Atomic Force Microscope.
Guo E; Zeng Z; Shi X; Long X; Wang X
Langmuir; 2016 Oct; 32(41):10589-10596. PubMed ID: 27642768
[TBL] [Abstract][Full Text] [Related]
18. Interface gap states and Schottky barrier inhomogeneity at metal/n-type GaN Schottky contacts.
Mamor M
J Phys Condens Matter; 2009 Aug; 21(33):335802. PubMed ID: 21828610
[TBL] [Abstract][Full Text] [Related]
19. Schottky junction devices by using bio-molecule DNA template-based one dimensional CdS-nanostructures.
Sarangi SN; Behera BC; Sahoo NK; Tripathy SK
Biosens Bioelectron; 2021 Oct; 190():113402. PubMed ID: 34139623
[TBL] [Abstract][Full Text] [Related]
20. Approaching the Schottky-Mott limit in van der Waals metal-semiconductor junctions.
Liu Y; Guo J; Zhu E; Liao L; Lee SJ; Ding M; Shakir I; Gambin V; Huang Y; Duan X
Nature; 2018 May; 557(7707):696-700. PubMed ID: 29769729
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]