These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
3. Effects of nitrogen incorporation in HfO(2) grown on InP by atomic layer deposition: an evolution in structural, chemical, and electrical characteristics. Kang YS; Kim DK; Kang HK; Jeong KS; Cho MH; Ko DH; Kim H; Seo JH; Kim DC ACS Appl Mater Interfaces; 2014 Mar; 6(6):3896-906. PubMed ID: 24467437 [TBL] [Abstract][Full Text] [Related]
4. Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors. Jeong SJ; Gu Y; Heo J; Yang J; Lee CS; Lee MH; Lee Y; Kim H; Park S; Hwang S Sci Rep; 2016 Feb; 6():20907. PubMed ID: 26861833 [TBL] [Abstract][Full Text] [Related]
6. Growth and properties of hafnicone and HfO(2)/hafnicone nanolaminate and alloy films using molecular layer deposition techniques. Lee BH; Anderson VR; George SM ACS Appl Mater Interfaces; 2014 Oct; 6(19):16880-7. PubMed ID: 25203487 [TBL] [Abstract][Full Text] [Related]
7. Atomic Layer Deposition of HfO Gieraltowska S; Wachnicki L; Dluzewski P; Witkowski BS; Godlewski M; Guziewicz E Materials (Basel); 2023 May; 16(11):. PubMed ID: 37297215 [TBL] [Abstract][Full Text] [Related]
8. Structural and Electrical Properties of EOT HfO2 (<1 nm) Grown on InAs by Atomic Layer Deposition and Its Thermal Stability. Kang YS; Kang HK; Kim DK; Jeong KS; Baik M; An Y; Kim H; Song JD; Cho MH ACS Appl Mater Interfaces; 2016 Mar; 8(11):7489-98. PubMed ID: 26928131 [TBL] [Abstract][Full Text] [Related]
9. Probing Interface Defects in Top-Gated MoS Zhao P; Azcatl A; Gomeniuk YY; Bolshakov P; Schmidt M; McDonnell SJ; Hinkle CL; Hurley PK; Wallace RM; Young CD ACS Appl Mater Interfaces; 2017 Jul; 9(28):24348-24356. PubMed ID: 28650155 [TBL] [Abstract][Full Text] [Related]
10. Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Deposition. Kukli K; Aarik L; Vinuesa G; Dueñas S; Castán H; García H; Kasikov A; Ritslaid P; Piirsoo HM; Aarik J Materials (Basel); 2022 Jan; 15(3):. PubMed ID: 35160824 [TBL] [Abstract][Full Text] [Related]
11. Structure and electrical properties of Al-doped HfO₂ and ZrO₂ films grown via atomic layer deposition on Mo electrodes. Yoo YW; Jeon W; Lee W; An CH; Kim SK; Hwang CS ACS Appl Mater Interfaces; 2014 Dec; 6(24):22474-82. PubMed ID: 25423483 [TBL] [Abstract][Full Text] [Related]
12. Interfacial reaction and electrical properties of HfO2 film gate dielectric prepared by pulsed laser deposition in nitrogen: role of rapid thermal annealing and gate electrode. Wang Y; Wang H; Ye C; Zhang J; Wang H; Jiang Y ACS Appl Mater Interfaces; 2011 Oct; 3(10):3813-8. PubMed ID: 21910462 [TBL] [Abstract][Full Text] [Related]
13. Atomic-Layer-Deposition Growth of an Ultrathin HfO Xiao M; Qiu C; Zhang Z; Peng LM ACS Appl Mater Interfaces; 2017 Oct; 9(39):34050-34056. PubMed ID: 28901123 [TBL] [Abstract][Full Text] [Related]
15. Structural evolution and the control of defects in atomic layer deposited HfO2-Al2O3 stacked films on GaAs. Kang YS; Kim DK; Jeong KS; Cho MH; Kim CY; Chung KB; Kim H; Kim DC ACS Appl Mater Interfaces; 2013 Mar; 5(6):1982-9. PubMed ID: 23438318 [TBL] [Abstract][Full Text] [Related]
16. Incorporation of Si and Zr into Pure HfO₂ and Its Effects on Dielectric Integrity. Kim H; Choi P; Lee N; Kim S; Koo K; Lee J; Choi B J Nanosci Nanotechnol; 2018 Sep; 18(9):5899-5903. PubMed ID: 29677713 [TBL] [Abstract][Full Text] [Related]
17. Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies. Faraz T; Knoops HCM; Verheijen MA; van Helvoirt CAA; Karwal S; Sharma A; Beladiya V; Szeghalmi A; Hausmann DM; Henri J; Creatore M; Kessels WMM ACS Appl Mater Interfaces; 2018 Apr; 10(15):13158-13180. PubMed ID: 29554799 [TBL] [Abstract][Full Text] [Related]
18. Nanostructures Stacked on Hafnium Oxide Films Interfacing Graphene and Silicon Oxide Layers as Resistive Switching Media. Kahro T; Raudonen K; Merisalu J; Tarre A; Ritslaid P; Kasikov A; Jõgiaas T; Käämbre T; Otsus M; Kozlova J; Alles H; Tamm A; Kukli K Nanomaterials (Basel); 2023 Apr; 13(8):. PubMed ID: 37110908 [TBL] [Abstract][Full Text] [Related]