These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

287 related articles for article (PubMed ID: 30073827)

  • 1. Ultralow Defect Density at Sub-0.5 nm HfO
    Kavrik MS; Thomson E; Chagarov E; Tang K; Ueda ST; Hou V; Aoki T; Kim M; Fruhberger B; Taur Y; McIntyre PC; Kummel AC
    ACS Appl Mater Interfaces; 2018 Sep; 10(36):30794-30802. PubMed ID: 30073827
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Engineering High- k/SiGe Interface with ALD Oxide for Selective GeO
    Kavrik MS; Ercius P; Cheung J; Tang K; Wang Q; Fruhberger B; Kim M; Taur Y; McIntyre PC; Kummel AC
    ACS Appl Mater Interfaces; 2019 Apr; 11(16):15111-15121. PubMed ID: 30938163
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.
    Zhang L; Guo Y; Hassan VV; Tang K; Foad MA; Woicik JC; Pianetta P; Robertson J; McIntyre PC
    ACS Appl Mater Interfaces; 2016 Jul; 8(29):19110-8. PubMed ID: 27345195
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Probing Interface Defects in Top-Gated MoS
    Zhao P; Azcatl A; Gomeniuk YY; Bolshakov P; Schmidt M; McDonnell SJ; Hinkle CL; Hurley PK; Wallace RM; Young CD
    ACS Appl Mater Interfaces; 2017 Jul; 9(28):24348-24356. PubMed ID: 28650155
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Understanding the Mechanism of Electronic Defect Suppression Enabled by Nonidealities in Atomic Layer Deposition.
    Kavrik MS; Bostwick A; Rotenberg E; Tang K; Thomson E; Aoki T; Fruhberger B; Taur Y; McIntyre PC; Kummel AC
    J Am Chem Soc; 2020 Jan; 142(1):134-145. PubMed ID: 31779305
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs Interface.
    Winter R; Shekhter P; Tang K; Floreano L; Verdini A; McIntyre PC; Eizenberg M
    ACS Appl Mater Interfaces; 2016 Jul; 8(26):16979-84. PubMed ID: 27282201
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Electrical properties and thermal stability in stack structure of HfO
    Baik M; Kang HK; Kang YS; Jeong KS; An Y; Choi S; Kim H; Song JD; Cho MH
    Sci Rep; 2017 Sep; 7(1):11337. PubMed ID: 28900097
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Interface Chemistry and Dielectric Optimization of TMA-Passivated high-
    Wang D; He G; Hao L; Qiao L; Fang Z; Liu J
    ACS Appl Mater Interfaces; 2020 Jun; 12(22):25390-25399. PubMed ID: 32383855
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Structural evolution and the control of defects in atomic layer deposited HfO2-Al2O3 stacked films on GaAs.
    Kang YS; Kim DK; Jeong KS; Cho MH; Kim CY; Chung KB; Kim H; Kim DC
    ACS Appl Mater Interfaces; 2013 Mar; 5(6):1982-9. PubMed ID: 23438318
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Density-functional theory molecular dynamics simulations of a-HfO2/Ge(100)(2 × 1) and a-ZrO2/Ge(100)(2 × 1) interface passivation.
    Chagarov EA; Porter L; Kummel AC
    J Chem Phys; 2016 Feb; 144(8):084704. PubMed ID: 26931715
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Interfacial, Electrical, and Band Alignment Characteristics of HfO
    Cao YQ; Wu B; Wu D; Li AD
    Nanoscale Res Lett; 2017 Dec; 12(1):370. PubMed ID: 28549375
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Near-ideal subthreshold swing MoS
    Pan Y; Jia K; Huang K; Wu Z; Bai G; Yu J; Zhang Z; Zhang Q; Yin H
    Nanotechnology; 2019 Mar; 30(9):095202. PubMed ID: 30561381
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Remote Oxygen Scavenging of the Interfacial Oxide Layer in Ferroelectric Hafnium-Zirconium Oxide-Based Metal-Oxide-Semiconductor Structures.
    Tasneem N; Kashyap H; Chae K; Park C; Lee PC; Lombardo SF; Afroze N; Tian M; Kumarasubramanian H; Hur J; Chen H; Chern W; Yu S; Bandaru P; Ravichandran J; Cho K; Kacher J; Kummel AC; Khan AI
    ACS Appl Mater Interfaces; 2022 Sep; 14(38):43897-43906. PubMed ID: 36121320
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Sub-Nanometer Interfacial Oxides on Highly Oriented Pyrolytic Graphite and Carbon Nanotubes Enabled by Lateral Oxide Growth.
    Zhang Z; Passlack M; Pitner G; Kuo CH; Ueda ST; Huang J; Kashyap H; Wang V; Spiegelman J; Lam KT; Liang YC; Liew SL; Hsu CF; Kummel AC; Bandaru P
    ACS Appl Mater Interfaces; 2022 Mar; 14(9):11873-11882. PubMed ID: 35192341
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Low temperature Al2O3 surface passivation for carrier-injection SiGe optical modulator.
    Kim Y; Han J; Takenaka M; Takagi S
    Opt Express; 2014 Apr; 22(7):7458-64. PubMed ID: 24718120
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Ultrathin ferroic HfO
    Cheema SS; Shanker N; Wang LC; Hsu CH; Hsu SL; Liao YH; San Jose M; Gomez J; Chakraborty W; Li W; Bae JH; Volkman SK; Kwon D; Rho Y; Pinelli G; Rastogi R; Pipitone D; Stull C; Cook M; Tyrrell B; Stoica VA; Zhang Z; Freeland JW; Tassone CJ; Mehta A; Saheli G; Thompson D; Suh DI; Koo WT; Nam KJ; Jung DJ; Song WB; Lin CH; Nam S; Heo J; Parihar N; Grigoropoulos CP; Shafer P; Fay P; Ramesh R; Mahapatra S; Ciston J; Datta S; Mohamed M; Hu C; Salahuddin S
    Nature; 2022 Apr; 604(7904):65-71. PubMed ID: 35388197
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Electrical Characteristics of Metal-Oxide-Semiconductor Capacitor with High-κ/Metal Gate Using Oxygen Scavenging Process.
    Lee J; Kim JH; Kwon DW; Park E; Park T; Kim HW; Park BG
    J Nanosci Nanotechnol; 2016 May; 16(5):4897-900. PubMed ID: 27483842
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Modulating the interface quality and electrical properties of HfTiO/InGaAs gate stack by atomic-layer-deposition-derived Al₂O₃ passivation layer.
    He G; Gao J; Chen H; Cui J; Sun Z; Chen X
    ACS Appl Mater Interfaces; 2014 Dec; 6(24):22013-25. PubMed ID: 25471009
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Density-Functional Theory Molecular Dynamics Simulations and Experimental Characterization of a-Al₂O₃/SiGe Interfaces.
    Chagarov E; Sardashti K; Kaufman-Osborn T; Madisetti S; Oktyabrsky S; Sahu B; Kummel A
    ACS Appl Mater Interfaces; 2015 Dec; 7(47):26275-83. PubMed ID: 26575590
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer.
    Qian Q; Li B; Hua M; Zhang Z; Lan F; Xu Y; Yan R; Chen KJ
    Sci Rep; 2016 Jun; 6():27676. PubMed ID: 27279454
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 15.