These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
576 related articles for article (PubMed ID: 30088755)
1. Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO Zhang H; Yoo S; Menzel S; Funck C; Cüppers F; Wouters DJ; Hwang CS; Waser R; Hoffmann-Eifert S ACS Appl Mater Interfaces; 2018 Sep; 10(35):29766-29778. PubMed ID: 30088755 [TBL] [Abstract][Full Text] [Related]
2. Ionic bipolar resistive switching modes determined by the preceding unipolar resistive switching reset behavior in Pt/TiO2/Pt. Yoon KJ; Song SJ; Seok JY; Yoon JH; Kim GH; Lee JH; Hwang CS Nanotechnology; 2013 Apr; 24(14):145201. PubMed ID: 23507958 [TBL] [Abstract][Full Text] [Related]
3. Reversible voltage dependent transition of abnormal and normal bipolar resistive switching. Wang G; Li C; Chen Y; Xia Y; Wu D; Xu Q Sci Rep; 2016 Nov; 6():36953. PubMed ID: 27841318 [TBL] [Abstract][Full Text] [Related]
4. Impact of oxygen exchange reaction at the ohmic interface in Ta Kim W; Menzel S; Wouters DJ; Guo Y; Robertson J; Roesgen B; Waser R; Rana V Nanoscale; 2016 Oct; 8(41):17774-17781. PubMed ID: 27523172 [TBL] [Abstract][Full Text] [Related]
5. Bipolar Resistive Switching Characteristics of HfO Zhang W; Kong JZ; Cao ZY; Li AD; Wang LG; Zhu L; Li X; Cao YQ; Wu D Nanoscale Res Lett; 2017 Dec; 12(1):393. PubMed ID: 28599512 [TBL] [Abstract][Full Text] [Related]
7. Anomalous Resistance Hysteresis in Oxide ReRAM: Oxygen Evolution and Reincorporation Revealed by In Situ TEM. Cooper D; Baeumer C; Bernier N; Marchewka A; La Torre C; Dunin-Borkowski RE; Menzel S; Waser R; Dittmann R Adv Mater; 2017 Jun; 29(23):. PubMed ID: 28417593 [TBL] [Abstract][Full Text] [Related]
8. Asymmetric Bipolar Resistive Switching of Halide Perovskite Film in Contact with TiO Lee S; Wolfe S; Torres J; Yun M; Lee JK ACS Appl Mater Interfaces; 2021 Jun; 13(23):27209-27216. PubMed ID: 34080828 [TBL] [Abstract][Full Text] [Related]
9. Evolution of the shape of the conducting channel in complementary resistive switching transition metal oxides. Yoon KJ; Song SJ; Seok JY; Yoon JH; Park TH; Kwon DE; Hwang CS Nanoscale; 2014 Feb; 6(4):2161-9. PubMed ID: 24366553 [TBL] [Abstract][Full Text] [Related]
10. The current limit and self-rectification functionalities in the TiO Yoon JH; Kwon DE; Kim Y; Kwon YJ; Yoon KJ; Park TH; Shao XL; Hwang CS Nanoscale; 2017 Aug; 9(33):11920-11928. PubMed ID: 28786468 [TBL] [Abstract][Full Text] [Related]
11. Electrically configurable electroforming and bipolar resistive switching in Pt/TiO2/Pt structures. Kim KM; Kim GH; Song SJ; Seok JY; Lee MH; Yoon JH; Hwang CS Nanotechnology; 2010 Jul; 21(30):305203. PubMed ID: 20610869 [TBL] [Abstract][Full Text] [Related]
12. Forming mechanism of the bipolar resistance switching in double-layer memristive nanodevices. Lee SB; Yoo HK; Kim K; Lee JS; Kim YS; Sinn S; Lee D; Kang BS; Kahng B; Noh TW Nanotechnology; 2012 Aug; 23(31):315202. PubMed ID: 22802159 [TBL] [Abstract][Full Text] [Related]
13. Improved bipolar resistive switching memory characteristics in Ge0.5Se0.5 solid electrolyte by using dispersed silver nanocrystals on bottom electrode. Kim JH; Nam KH; Hwang I; Cho WJ; Park B; Chung HB J Nanosci Nanotechnol; 2014 Dec; 14(12):9498-503. PubMed ID: 25971090 [TBL] [Abstract][Full Text] [Related]
14. Vacancy-Engineered Nickel Ferrite Forming-Free Low-Voltage Resistive Switches for Neuromorphic Circuits. R RK; Kalaboukhov A; Weng YC; Rathod KN; Johansson T; Lindblad A; Kamalakar MV; Sarkar T ACS Appl Mater Interfaces; 2024 Apr; 16(15):19225-19234. PubMed ID: 38579143 [TBL] [Abstract][Full Text] [Related]
15. A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure. Kim KM; Choi BJ; Lee MH; Kim GH; Song SJ; Seok JY; Yoon JH; Han S; Hwang CS Nanotechnology; 2011 Jun; 22(25):254010. PubMed ID: 21572205 [TBL] [Abstract][Full Text] [Related]
16. Improvement in Resistance Switching of SiC-Based Nonvolatile Memory by Solution-Deposited HfO Kim TW; Cho WJ J Nanosci Nanotechnol; 2019 Mar; 19(3):1248-1253. PubMed ID: 30469171 [TBL] [Abstract][Full Text] [Related]
17. Multi-Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration. Lü W; Li C; Zheng L; Xiao J; Lin W; Li Q; Wang XR; Huang Z; Zeng S; Han K; Zhou W; Zeng K; Chen J; Ariando ; Cao W; Venkatesan T Adv Mater; 2017 Jun; 29(24):. PubMed ID: 28439926 [TBL] [Abstract][Full Text] [Related]
18. Nanoscale cation motion in TaO(x), HfO(x) and TiO(x) memristive systems. Wedig A; Luebben M; Cho DY; Moors M; Skaja K; Rana V; Hasegawa T; Adepalli KK; Yildiz B; Waser R; Valov I Nat Nanotechnol; 2016 Jan; 11(1):67-74. PubMed ID: 26414197 [TBL] [Abstract][Full Text] [Related]