These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

567 related articles for article (PubMed ID: 30110151)

  • 1. Structural Properties of Al-O Monolayers in SiO
    Hiller D; Göttlicher J; Steininger R; Huthwelker T; Julin J; Munnik F; Wahl M; Bock W; Schoenaers B; Stesmans A; König D
    ACS Appl Mater Interfaces; 2018 Sep; 10(36):30495-30505. PubMed ID: 30110151
    [TBL] [Abstract][Full Text] [Related]  

  • 2. On the Control of the Fixed Charge Densities in Al2O3-Based Silicon Surface Passivation Schemes.
    Simon DK; Jordan PM; Mikolajick T; Dirnstorfer I
    ACS Appl Mater Interfaces; 2015 Dec; 7(51):28215-22. PubMed ID: 26618751
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Effects of Low Temperature Anneal on the Interface Properties of Thermal Silicon Oxide for Silicon Surface Passivation.
    Balaji N; Park C; Chung S; Ju M; Raja J; Yi J
    J Nanosci Nanotechnol; 2016 May; 16(5):4783-7. PubMed ID: 27483822
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks.
    Xiang Y; Zhou C; Jia E; Wang W
    Nanoscale Res Lett; 2015; 10():137. PubMed ID: 25852428
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures.
    Zhao Y; Zhou C; Zhang X; Zhang P; Dou Y; Wang W; Cao X; Wang B; Tang Y; Zhou S
    Nanoscale Res Lett; 2013 Mar; 8(1):114. PubMed ID: 23452508
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Stable chemical enhancement of passivating nanolayer structures grown by atomic layer deposition on silicon.
    Pain SL; Khorani E; Niewelt T; Wratten A; Walker M; Grant NE; Murphy JD
    Nanoscale; 2023 Jun; 15(25):10593-10605. PubMed ID: 37284742
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Engineering Interfacial Silicon Dioxide for Improved Metal-Insulator-Semiconductor Silicon Photoanode Water Splitting Performance.
    Satterthwaite PF; Scheuermann AG; Hurley PK; Chidsey CE; McIntyre PC
    ACS Appl Mater Interfaces; 2016 May; 8(20):13140-9. PubMed ID: 27096845
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Effect of Al
    Acharya J; Goul R; Romine D; Sakidja R; Wu J
    ACS Appl Mater Interfaces; 2019 Aug; 11(33):30368-30375. PubMed ID: 31356739
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Selective Growth of Interface Layers from Reactions of Sc(MeCp)
    Rahman R; Klesko JP; Dangerfield A; Mattson EC; Chabal YJ
    ACS Appl Mater Interfaces; 2018 Sep; 10(38):32818-32827. PubMed ID: 30211529
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Low temperature Al2O3 surface passivation for carrier-injection SiGe optical modulator.
    Kim Y; Han J; Takenaka M; Takagi S
    Opt Express; 2014 Apr; 22(7):7458-64. PubMed ID: 24718120
    [TBL] [Abstract][Full Text] [Related]  

  • 11. The impact of thickness and thermal annealing on refractive index for aluminum oxide thin films deposited by atomic layer deposition.
    Wang ZY; Zhang RJ; Lu HL; Chen X; Sun Y; Zhang Y; Wei YF; Xu JP; Wang SY; Zheng YX; Chen LY
    Nanoscale Res Lett; 2015; 10():46. PubMed ID: 25852343
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Improving the electrical properties of lanthanum silicate films on ge metal oxide semiconductor capacitors by adopting interfacial barrier and capping layers.
    Choi YJ; Lim H; Lee S; Suh S; Kim JR; Jung HS; Park S; Lee JH; Kim SG; Hwang CS; Kim H
    ACS Appl Mater Interfaces; 2014 May; 6(10):7885-94. PubMed ID: 24780393
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Functionalization of the SiO
    Xu W; Haeve MGN; Lemaire PC; Sharma K; Hausmann DM; Agarwal S
    Langmuir; 2022 Jan; 38(2):652-660. PubMed ID: 34990131
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Investigation on the passivated Si/Al2O3 interface fabricated by non-vacuum spatial atomic layer deposition system.
    Lien SY; Yang CH; Wu KC; Kung CY
    Nanoscale Res Lett; 2015; 10():93. PubMed ID: 25852389
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition.
    Wang WC; Tsai MC; Yang J; Hsu C; Chen MJ
    ACS Appl Mater Interfaces; 2015 May; 7(19):10228-37. PubMed ID: 25919200
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Use of Mixed CH3-/HC(O)CH2CH2-Si(111) Functionality to Control Interfacial Chemical and Electronic Properties During the Atomic-Layer Deposition of Ultrathin Oxides on Si(111).
    O'Leary LE; Strandwitz NC; Roske CW; Pyo S; Brunschwig BS; Lewis NS
    J Phys Chem Lett; 2015 Feb; 6(4):722-6. PubMed ID: 26262493
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Modulating the interface quality and electrical properties of HfTiO/InGaAs gate stack by atomic-layer-deposition-derived Al₂O₃ passivation layer.
    He G; Gao J; Chen H; Cui J; Sun Z; Chen X
    ACS Appl Mater Interfaces; 2014 Dec; 6(24):22013-25. PubMed ID: 25471009
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer.
    Wang X; Liu HX; Fei CX; Yin SY; Fan XJ
    Nanoscale Res Lett; 2015; 10():141. PubMed ID: 25897303
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Atomic-Layer-Deposited TiO
    Matsui T; Bivour M; Hermle M; Sai H
    ACS Appl Mater Interfaces; 2020 Nov; 12(44):49777-49785. PubMed ID: 33089680
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Probing the Dielectric Properties of Ultrathin Al/Al
    Acharya J; Wilt J; Liu B; Wu J
    ACS Appl Mater Interfaces; 2018 Jan; 10(3):3112-3120. PubMed ID: 29293311
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 29.