291 related articles for article (PubMed ID: 30184959)
21. Direct band-gap crossover in epitaxial monolayer boron nitride.
Elias C; Valvin P; Pelini T; Summerfield A; Mellor CJ; Cheng TS; Eaves L; Foxon CT; Beton PH; Novikov SV; Gil B; Cassabois G
Nat Commun; 2019 Jun; 10(1):2639. PubMed ID: 31201328
[TBL] [Abstract][Full Text] [Related]
22. Role of Carbon Interstitials in Transition Metal Substrates on Controllable Synthesis of High-Quality Large-Area Two-Dimensional Hexagonal Boron Nitride Layers.
Tian H; Khanaki A; Das P; Zheng R; Cui Z; He Y; Shi W; Xu Z; Lake R; Liu J
Nano Lett; 2018 Jun; 18(6):3352-3361. PubMed ID: 29727192
[TBL] [Abstract][Full Text] [Related]
23. Photoluminescence Upconversion by Defects in Hexagonal Boron Nitride.
Wang Q; Zhang Q; Zhao X; Luo X; Wong CPY; Wang J; Wan D; Venkatesan T; Pennycook SJ; Loh KP; Eda G; Wee ATS
Nano Lett; 2018 Nov; 18(11):6898-6905. PubMed ID: 30260651
[TBL] [Abstract][Full Text] [Related]
24. Effect of high carbon incorporation in Co substrates on the epitaxy of hexagonal boron nitride/graphene heterostructures.
Khanaki A; Tian H; Xu Z; Zheng R; He Y; Cui Z; Yang J; Liu J
Nanotechnology; 2018 Jan; 29(3):035602. PubMed ID: 29165320
[TBL] [Abstract][Full Text] [Related]
25. Two dimensional boron nitride growth on nickel foils by plasma assisted molecular beam epitaxy from elemental B and N sources.
Batista-Pessoa W; Wallart X; Vignaud D
Nanotechnology; 2023 Jul; 34(41):. PubMed ID: 37406622
[TBL] [Abstract][Full Text] [Related]
26. Luminescence properties of hexagonal boron nitride powders probed by deep UV photoluminescence spectroscopy.
Maharjan N; Nakarmi ML
MRS Adv; 2021; 6(11):307-310. PubMed ID: 33996148
[TBL] [Abstract][Full Text] [Related]
27. Wafer-Scale Single Crystal Hexagonal Boron Nitride Layers Grown by Submicron-Spacing Vapor Deposition.
Wang G; Huang J; Zhang S; Meng J; Chen J; Shi Y; Jiang J; Li J; Cheng Y; Zeng L; Yin Z; Zhang X
Small; 2023 Jun; 19(24):e2301086. PubMed ID: 36919923
[TBL] [Abstract][Full Text] [Related]
28. Epitaxial chemical vapour deposition growth of monolayer hexagonal boron nitride on a Cu(111)/sapphire substrate.
Uchida Y; Iwaizako T; Mizuno S; Tsuji M; Ago H
Phys Chem Chem Phys; 2017 Mar; 19(12):8230-8235. PubMed ID: 28272611
[TBL] [Abstract][Full Text] [Related]
29. Epitaxial growth of a single-crystal hybridized boron nitride and graphene layer on a wide-band gap semiconductor.
Shin HC; Jang Y; Kim TH; Lee JH; Oh DH; Ahn SJ; Lee JH; Moon Y; Park JH; Yoo SJ; Park CY; Whang D; Yang CW; Ahn JR
J Am Chem Soc; 2015 Jun; 137(21):6897-905. PubMed ID: 25973636
[TBL] [Abstract][Full Text] [Related]
30. Quasiliquid Layer Promotes Hexagonal Boron Nitride (h-BN) Single-Domain Growth: h-BN on Pt(110).
Steiner D; Mittendorfer F; Bertel E
ACS Nano; 2019 Jun; 13(6):7083-7090. PubMed ID: 31184857
[TBL] [Abstract][Full Text] [Related]
31. Electronic Properties of Transferable Atomically Thin MoSe
Chen MW; Kim H; Bernard C; Pizzochero M; Zaldı Var J; Pascual JI; Ugeda MM; Yazyev OV; Greber T; Osterwalder J; Renault O; Kis A
ACS Nano; 2018 Nov; 12(11):11161-11168. PubMed ID: 30371049
[TBL] [Abstract][Full Text] [Related]
32. Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates.
Wu J; Li P; Xu S; Zhou X; Tao H; Yue W; Wang Y; Wu J; Zhang Y; Hao Y
Materials (Basel); 2020 Nov; 13(22):. PubMed ID: 33202801
[TBL] [Abstract][Full Text] [Related]
33. In silico carbon molecular beam epitaxial growth of graphene on the h-BN substrate: carbon source effect on van der Waals epitaxy.
Lee J; Varshney V; Park J; Farmer BL; Roy AK
Nanoscale; 2016 May; 8(18):9704-13. PubMed ID: 27108606
[TBL] [Abstract][Full Text] [Related]
34. Hexagonal Boron Nitride as an Intermediate Layer for Gallium Nitride Epitaxial Growth in Near-Ultraviolet Light-Emitting Diodes.
Park AH; Seo TH
Materials (Basel); 2023 Nov; 16(22):. PubMed ID: 38005145
[TBL] [Abstract][Full Text] [Related]
35. Enhancement of InN Luminescence by Introduction of Graphene Interlayer.
Dobrovolskas D; Arakawa S; Mouri S; Araki T; Nanishi Y; Mickevičius J; Tamulaitis G
Nanomaterials (Basel); 2019 Mar; 9(3):. PubMed ID: 30871011
[TBL] [Abstract][Full Text] [Related]
36. Excitation Density Dependent Photoluminescence Studies on Homo-Epitaxial GaN Nanowall Networks Grown by Laser Assisted Molecular Beam Epitaxy.
Ramesh C; Pandey J; Tyagi P; Soni A; Senthil Kumar M; Kushvaha SS
J Nanosci Nanotechnol; 2020 Jun; 20(6):3866-3872. PubMed ID: 31748088
[TBL] [Abstract][Full Text] [Related]
37. The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation.
Park JH; Yang X; Lee JY; Park MD; Bae SY; Pristovsek M; Amano H; Lee DS
Chem Sci; 2021 May; 12(22):7713-7719. PubMed ID: 34168823
[TBL] [Abstract][Full Text] [Related]
38. Structural and optical properties of self-assembled AlN nanowires grown on SiO
Gačević Ž; Grandal J; Guo Q; Kirste R; Varela M; Sitar Z; Sánchez García MA
Nanotechnology; 2021 May; 32(19):195601. PubMed ID: 33535196
[TBL] [Abstract][Full Text] [Related]
39. In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy.
Zuo Z; Xu Z; Zheng R; Khanaki A; Zheng JG; Liu J
Sci Rep; 2015 Oct; 5():14760. PubMed ID: 26442629
[TBL] [Abstract][Full Text] [Related]
40. Toward the controlled synthesis of hexagonal boron nitride films.
Ismach A; Chou H; Ferrer DA; Wu Y; McDonnell S; Floresca HC; Covacevich A; Pope C; Piner R; Kim MJ; Wallace RM; Colombo L; Ruoff RS
ACS Nano; 2012 Jul; 6(7):6378-85. PubMed ID: 22702240
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]
