These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

179 related articles for article (PubMed ID: 30223545)

  • 21. Role of hole confinement in the recombination properties of InGaN quantum structures.
    Anikeeva M; Albrecht M; Mahler F; Tomm JW; Lymperakis L; Chèze C; Calarco R; Neugebauer J; Schulz T
    Sci Rep; 2019 Jun; 9(1):9047. PubMed ID: 31227738
    [TBL] [Abstract][Full Text] [Related]  

  • 22. A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multi-quantum-well structures.
    Xing Y; Wang L; Yang D; Wang Z; Hao Z; Sun C; Xiong B; Luo Y; Han Y; Wang J; Li H
    Sci Rep; 2017 Mar; 7():45082. PubMed ID: 28327629
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Three-dimensional hierarchical semi-polar GaN/InGaN MQW coaxial nanowires on a patterned Si nanowire template.
    Johar MA; Kim T; Song HG; Waseem A; Kang JH; Hassan MA; Bagal IV; Cho YH; Ryu SW
    Nanoscale Adv; 2020 Apr; 2(4):1654-1665. PubMed ID: 36132313
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Enhancing Emission via Radiative Lifetime Manipulation in Ultrathin InGaN/GaN Quantum Wells: The Effects of Simultaneous Electric and Magnetic Fields, Thickness, and Impurity.
    En-Nadir R; Basyooni-M Kabatas MA; Tihtih M; Belaid W; Ez-Zejjari I; Majda EG; El Ghazi H; Sali A; Zorkani I
    Nanomaterials (Basel); 2023 Oct; 13(21):. PubMed ID: 37947663
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells.
    Zhao H; Liu G; Zhang J; Poplawsky JD; Dierolf V; Tansu N
    Opt Express; 2011 Jul; 19 Suppl 4():A991-A1007. PubMed ID: 21747571
    [TBL] [Abstract][Full Text] [Related]  

  • 26. The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes.
    Zhou S; Liu X; Yan H; Gao Y; Xu H; Zhao J; Quan Z; Gui C; Liu S
    Sci Rep; 2018 Jul; 8(1):11053. PubMed ID: 30038360
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN.
    Yu CT; Lai WC; Yen CH; Hsu HC; Chang SJ
    Opt Express; 2014 May; 22 Suppl 3():A633-41. PubMed ID: 24922371
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Nitrogen vacancies in GaN templates and their critical role on the luminescence efficiency of blue quantum wells.
    Li F; Liu J; Tian A; Li X; Zhang F; Yang H
    Opt Express; 2023 Apr; 31(9):14937-14944. PubMed ID: 37157346
    [TBL] [Abstract][Full Text] [Related]  

  • 29. An InGaN/GaN Superlattice to Enhance the Performance of Green LEDs: Exploring the Role of V-Pits.
    Liu M; Zhao J; Zhou S; Gao Y; Hu J; Liu X; Ding X
    Nanomaterials (Basel); 2018 Jun; 8(7):. PubMed ID: 29933543
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Cathodoluminescence studies of the optical properties of a zincblende InGaN/GaN single quantum well.
    Gundimeda A; Kusch G; Frentrup M; Kappers MJ; Wallis DJ; Oliver RA
    Nanotechnology; 2024 Jul; 35(39):. PubMed ID: 38955135
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes.
    Sarzyński M; Grzanka E; Grzanka S; Targowski G; Czernecki R; Reszka A; Holy V; Nitta S; Liu Z; Amano H; Leszczyński M
    Materials (Basel); 2019 Aug; 12(16):. PubMed ID: 31416124
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness.
    Wang X; Liang F; Zhao D; Liu Z; Zhu J; Yang J
    Nanoscale Res Lett; 2020 Oct; 15(1):191. PubMed ID: 33001341
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Carbon-nanotube-assisted nanoepitaxy of Si-doped GaN for improved performance of InGaN/GaN light-emitting diodes.
    Park AH; Chandramohan S; Seo TH; Lee GH; Min KH; Hong CH; Kim MJ; Suh EK
    Nanotechnology; 2016 Jul; 27(27):275602. PubMed ID: 27232210
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Effect of strain relaxation in InGaN/GaN multi-quantum wells with self-assembled Pt nanoclusters.
    Park AH; Oh TS; Seo TH; Lee SB; Lee GH; Suh EK
    J Nanosci Nanotechnol; 2014 Nov; 14(11):8347-51. PubMed ID: 25958526
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Polarization-Induced Phase Transitions in Ultra-Thin InGaN-Based Double Quantum Wells.
    Łepkowski SP; Anwar AR
    Nanomaterials (Basel); 2022 Jul; 12(14):. PubMed ID: 35889639
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Improving the internal quantum efficiency of QD/QW hybrid structures by increasing the GaN barrier thickness.
    Jia Z; Hao X; Lu T; Dong H; Jia Z; Ma S; Liang J; Jia W; Xu B
    RSC Adv; 2020 Nov; 10(68):41443-41452. PubMed ID: 35516542
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Enhanced Light Emission due to Formation of Semi-polar InGaN/GaN Multi-quantum Wells.
    Zhao WR; Weng GE; Wang JY; Zhang JY; Liang HW; Sekiguchi T; Zhang BP
    Nanoscale Res Lett; 2015 Dec; 10(1):459. PubMed ID: 26625883
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Influence of V-pits on the efficiency droop in InGaN/GaN quantum wells.
    Kim J; Cho YH; Ko DS; Li XS; Won JY; Lee E; Park SH; Kim JY; Kim S
    Opt Express; 2014 May; 22 Suppl 3():A857-66. PubMed ID: 24922392
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Study on the self-absorption of InGaN quantum wells at high photon density.
    Zhou J; Chen P; Liu MH; Xu R; Li YM; Ge C; Peng HC; Mao XK; Xie ZL; Xiu XQ; Chen DJ; Liu B; Han P; Shi Y; Zhang R; Zheng YD
    Appl Opt; 2020 Jun; 59(16):4790-4795. PubMed ID: 32543471
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Hydrogen passivation: a proficient strategy to enhance the optical and photoelectrochemical performance of InGaN/GaN single-quantum-well nanorods.
    Reddeppa M; Park BG; Majumder S; Kim YH; Oh JE; Kim SG; Kim D; Kim MD
    Nanotechnology; 2020 Nov; 31(47):475201. PubMed ID: 32629439
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 9.