These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
252 related articles for article (PubMed ID: 30232628)
1. An Overview of the Ultrawide Bandgap Ga Xue H; He Q; Jian G; Long S; Pang T; Liu M Nanoscale Res Lett; 2018 Sep; 13(1):290. PubMed ID: 30232628 [TBL] [Abstract][Full Text] [Related]
2. Recent Advances in β-Ga Huan YW; Sun SM; Gu CJ; Liu WJ; Ding SJ; Yu HY; Xia CT; Zhang DW Nanoscale Res Lett; 2018 Aug; 13(1):246. PubMed ID: 30136254 [TBL] [Abstract][Full Text] [Related]
3. A Review of β-Ga He Y; Zhao F; Huang B; Zhang T; Zhu H Materials (Basel); 2024 Apr; 17(8):. PubMed ID: 38673227 [TBL] [Abstract][Full Text] [Related]
4. Ga Song Y; Shoemaker D; Leach JH; McGray C; Huang HL; Bhattacharyya A; Zhang Y; Gonzalez-Valle CU; Hess T; Zhukovsky S; Ferri K; Lavelle RM; Perez C; Snyder DW; Maria JP; Ramos-Alvarado B; Wang X; Krishnamoorthy S; Hwang J; Foley BM; Choi S ACS Appl Mater Interfaces; 2021 Sep; 13(34):40817-40829. PubMed ID: 34470105 [TBL] [Abstract][Full Text] [Related]
5. Ultra-wide bandgap semiconductor Ga Zhang J; Dong P; Dang K; Zhang Y; Yan Q; Xiang H; Su J; Liu Z; Si M; Gao J; Kong M; Zhou H; Hao Y Nat Commun; 2022 Jul; 13(1):3900. PubMed ID: 35794123 [TBL] [Abstract][Full Text] [Related]
6. Fabrication of Ga Jiao T; Chen W; Li Z; Diao Z; Dang X; Chen P; Dong X; Zhang Y; Zhang B Materials (Basel); 2022 Nov; 15(23):. PubMed ID: 36499777 [TBL] [Abstract][Full Text] [Related]
7. A 1.6 kV Ga Zhou X; Yang J; Zhang H; Liu Y; Xie G; Liu W Nanomaterials (Basel); 2024 Jun; 14(11):. PubMed ID: 38869603 [TBL] [Abstract][Full Text] [Related]
8. A 2.8 kV Breakdown Voltage α-Ga Oh SY; Jeong YJ; Kang I; Park JH; Yeom MJ; Jeon DW; Yoo G Micromachines (Basel); 2024 Jan; 15(1):. PubMed ID: 38258252 [TBL] [Abstract][Full Text] [Related]
10. Facile synthesis of Feria DN; Huang QZ; Yeh CS; Lin SX; Lin DY; Tseng BC; Lian JT; Lin TY Nanotechnology; 2024 Jan; 35(12):. PubMed ID: 38064741 [TBL] [Abstract][Full Text] [Related]
11. Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction. Sun T; Luo X; Wei J; Yang C; Zhang B Nanoscale Res Lett; 2020 Jul; 15(1):149. PubMed ID: 32676687 [TBL] [Abstract][Full Text] [Related]
12. 2D Amorphous GaO Moon S; Lee D; Park J; Kim J ACS Appl Mater Interfaces; 2023 Aug; 15(31):37687-37695. PubMed ID: 37498125 [TBL] [Abstract][Full Text] [Related]
13. Control of Ni/β-Ga Labed M; Sengouga N; Rim YS Nanomaterials (Basel); 2022 Mar; 12(5):. PubMed ID: 35269314 [TBL] [Abstract][Full Text] [Related]
14. Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications. Maimon O; Li Q Materials (Basel); 2023 Dec; 16(24):. PubMed ID: 38138834 [TBL] [Abstract][Full Text] [Related]
15. Gallium Oxide for Gas Sensor Applications: A Comprehensive Review. Zhu J; Xu Z; Ha S; Li D; Zhang K; Zhang H; Feng J Materials (Basel); 2022 Oct; 15(20):. PubMed ID: 36295403 [TBL] [Abstract][Full Text] [Related]
16. Extremely Low Thermal Resistance of β-Ga Qu Z; Xie Y; Zhao T; Xu W; He Y; Xu Y; Sun H; You T; Han G; Hao Y; Ou X ACS Appl Mater Interfaces; 2024 Oct; 16(42):57816-57823. PubMed ID: 39388110 [TBL] [Abstract][Full Text] [Related]
17. Heterostructure WSe Kim J; Mastro MA; Tadjer MJ; Kim J ACS Appl Mater Interfaces; 2018 Sep; 10(35):29724-29729. PubMed ID: 30092634 [TBL] [Abstract][Full Text] [Related]
18. Recent progress of Ga Zhang Z; Yan P; Song Q; Chen H; Zhang W; Yuan H; Du F; Liu D; Chen D; Zhang Y Fundam Res; 2024 Sep; 4(5):1292-1305. PubMed ID: 39431132 [TBL] [Abstract][Full Text] [Related]
19. Ga Chi Z; Asher JJ; Jennings MR; Chikoidze E; Pérez-Tomás A Materials (Basel); 2022 Feb; 15(3):. PubMed ID: 35161108 [TBL] [Abstract][Full Text] [Related]
20. Electrical Characterizations of Planar Ga Zhang S; Liu Z; Liu Y; Zhi Y; Li P; Wu Z; Tang W Micromachines (Basel); 2021 Mar; 12(3):. PubMed ID: 33802423 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]