These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

148 related articles for article (PubMed ID: 30287869)

  • 1. Improving carrier mobility of polycrystalline Ge by Sn doping.
    Moto K; Yoshimine R; Suemasu T; Toko K
    Sci Rep; 2018 Oct; 8(1):14832. PubMed ID: 30287869
    [TBL] [Abstract][Full Text] [Related]  

  • 2. High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization.
    Toko K; Yoshimine R; Moto K; Suemasu T
    Sci Rep; 2017 Dec; 7(1):16981. PubMed ID: 29209030
    [TBL] [Abstract][Full Text] [Related]  

  • 3. High-electron-mobility (370 cm
    Saito M; Moto K; Nishida T; Suemasu T; Toko K
    Sci Rep; 2019 Nov; 9(1):16558. PubMed ID: 31719607
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Synthesis of Ge
    Mahmodi H; Hashim MR; Soga T; Alrokayan S; Khan HA; Rusop M
    Materials (Basel); 2018 Nov; 11(11):. PubMed ID: 30424494
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Free-running Sn precipitates: an efficient phase separation mechanism for metastable Ge
    Groiss H; Glaser M; Schatzl M; Brehm M; Gerthsen D; Roth D; Bauer P; Schäffler F
    Sci Rep; 2017 Nov; 7(1):16114. PubMed ID: 29170483
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Strain-dependent grain boundary properties of n-type germanium layers.
    Igura K; Nozawa K; Ishiyama T; Suemasu T; Toko K
    Sci Rep; 2024 Apr; 14(1):7812. PubMed ID: 38565560
    [TBL] [Abstract][Full Text] [Related]  

  • 7. High Thermoelectric Performance in Polycrystalline GeSiSn Ternary Alloy Thin Films.
    Maeda S; Ishiyama T; Nishida T; Ozawa T; Saitoh N; Yoshizawa N; Suemasu T; Toko K
    ACS Appl Mater Interfaces; 2022 Dec; 14(49):54848-54854. PubMed ID: 36450141
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Strain effects on polycrystalline germanium thin films.
    Imajo T; Suemasu T; Toko K
    Sci Rep; 2021 Apr; 11(1):8333. PubMed ID: 33859279
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Tuning Bandgap of p-Type Cu
    Yi Q; Wu J; Zhao J; Wang H; Hu J; Dai X; Zou G
    ACS Appl Mater Interfaces; 2017 Jan; 9(2):1602-1608. PubMed ID: 27996233
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Stretching the Equilibrium Limit of Sn in Ge
    Biswas S; Doherty J; Galluccio E; Manning HG; Conroy M; Duffy R; Bangert U; Boland JJ; Holmes JD
    ACS Appl Nano Mater; 2021 Feb; 4(2):1048-1056. PubMed ID: 34056558
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Electron Scattering and Doping Mechanisms in Solid-Phase-Crystallized In2O3:H Prepared by Atomic Layer Deposition.
    Macco B; Knoops HC; Kessels WM
    ACS Appl Mater Interfaces; 2015 Aug; 7(30):16723-9. PubMed ID: 26168056
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Defect-free high Sn-content GeSn on insulator grown by rapid melting growth.
    Liu Z; Cong H; Yang F; Li C; Zheng J; Xue C; Zuo Y; Cheng B; Wang Q
    Sci Rep; 2016 Dec; 6():38386. PubMed ID: 27941825
    [TBL] [Abstract][Full Text] [Related]  

  • 13. The growth of Ge and direct bandgap Ge
    Gunder C; Maia de Oliveira F; Wangila E; Stanchu H; Zamani-Alavijeh M; Ojo S; Acharya S; Said A; Li C; Mazur YI; Yu SQ; Salamo GJ
    RSC Adv; 2024 Jan; 14(2):1250-1257. PubMed ID: 38174282
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Growth and applications of GeSn-related group-IV semiconductor materials.
    Zaima S; Nakatsuka O; Taoka N; Kurosawa M; Takeuchi W; Sakashita M
    Sci Technol Adv Mater; 2015 Aug; 16(4):043502. PubMed ID: 27877818
    [TBL] [Abstract][Full Text] [Related]  

  • 15. High-performance solution-processed amorphous zinc-indium-tin oxide thin-film transistors.
    Kim MG; Kim HS; Ha YG; He J; Kanatzidis MG; Facchetti A; Marks TJ
    J Am Chem Soc; 2010 Aug; 132(30):10352-64. PubMed ID: 20662515
    [TBL] [Abstract][Full Text] [Related]  

  • 16. High-Mobility Metastable Rock-Salt Type (Sn,Ca)Se Thin Film Stabilized by Direct Epitaxial Growth on a YSZ (111) Single-Crystal Substrate.
    He X; Chen J; Katase T; Minohara M; Ide K; Hiramatsu H; Kumigashira H; Hosono H; Kamiya T
    ACS Appl Mater Interfaces; 2022 Apr; 14(16):18682-18689. PubMed ID: 35420024
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Ge
    Tallapally V; Nakagawara TA; Demchenko DO; Özgür Ü; Arachchige IU
    Nanoscale; 2018 Nov; 10(43):20296-20305. PubMed ID: 30374504
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Material gain engineering in GeSn/Ge quantum wells integrated with an Si platform.
    Mączko HS; Kudrawiec R; Gladysiewicz M
    Sci Rep; 2016 Sep; 6():34082. PubMed ID: 27686056
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Doping of Sn-based two-dimensional perovskite semiconductor for high-performance field-effect transistors and thermoelectric devices.
    Liu Y; Chen PA; Qiu X; Guo J; Xia J; Wei H; Xie H; Hou S; He M; Wang X; Zeng Z; Jiang L; Liao L; Hu Y
    iScience; 2022 Apr; 25(4):104109. PubMed ID: 35402868
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Ligand-Driven Grain Engineering of High Mobility Two-Dimensional Perovskite Thin-Film Transistors.
    Liang A; Gao Y; Asadpour R; Wei Z; Finkenauer BP; Jin L; Yang J; Wang K; Chen K; Liao P; Zhu C; Huang L; Boudouris BW; Alam MA; Dou L
    J Am Chem Soc; 2021 Sep; 143(37):15215-15223. PubMed ID: 34516736
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.